Transistor and display device
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
1. A semiconductor device comprising:
a first conductive film;
a first insulating film over the first conductive film;
an oxide semiconductor film comprising first to fifth regions over the first insulating film;
a second insulating film over the oxide semiconductor film;
a second electrode over and in contact with the oxide semiconductor film;
a third electrode over and in contact with the oxide semiconductor film; and
a third insulating film over the second insulating film and in contact with the oxide semiconductor film,
wherein the oxide semiconductor film comprises indium and zinc,
wherein the first region of the oxide semiconductor film is positioned between the second region and the third region of the oxide semiconductor film,
wherein the fourth region of the oxide semiconductor film is positioned between the first region and the second region of the oxide semiconductor film,
wherein the fifth region of the oxide semiconductor film is positioned between the first region and the third region of the oxide semiconductor film,
wherein the second electrode is in contact with the second region of the oxide semiconductor film,
wherein the third electrode is in contact with the third region of the oxide semiconductor film,
wherein the third insulating film is in contact with the fourth region and the fifth region of the oxide semiconductor film,
wherein the third insulating film is a nitride insulating film,
wherein the first region of the oxide semiconductor film is a channel formation region, and
wherein each of the second to fifth region of the oxide semiconductor film has lower resistance than the first region of the oxide semiconductor film.
2. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises gallium.
3. The semiconductor device according to claim 1 , wherein the third insulating film is positioned over the second electrode and the third electrode.
4. The semiconductor device according to claim 1 , wherein a top surface of the second insulating film is in contact with the third insulating film.
5. The semiconductor device according to claim 1 , wherein the oxide semiconductor film is in an amorphous state.
6. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises a sixth region and the seventh region,
wherein the second region of the oxide semiconductor film is positioned between the fourth region and the sixth region of the oxide semiconductor film,
wherein the third region of the oxide semiconductor film is positioned between the fifth region and the seventh region of the oxide semiconductor film, and
wherein each of the sixth region and the seventh region of the oxide semiconductor film is in an oxygen-excess state.
7. The semiconductor device according to claim 1 , wherein each of the second electrode and the third electrode is an oxide conductive film.
8. The semiconductor device according to claim 1 , wherein each of the second electrode and the third electrode comprises a crystalline region.
9. A semiconductor device comprising:
a first conductive film;
a first insulating film over the first conductive film;
an oxide semiconductor film comprising first to fifth regions over the first insulating film;
a second insulating film over the oxide semiconductor film;
a second electrode over and in contact with the oxide semiconductor film;
a third electrode over and in contact with the oxide semiconductor film; and
a third insulating film over the second insulating film and in contact with the oxide semiconductor film,
wherein the oxide semiconductor film comprises indium and zinc,
wherein the first region of the oxide semiconductor film is positioned between the second region and the third region of the oxide semiconductor film,
wherein the fourth region of the oxide semiconductor film is positioned between the first region and the second region of the oxide semiconductor film,
wherein the fifth region of the oxide semiconductor film is positioned between the first region and the third region of the oxide semiconductor film,
wherein the second electrode is in contact with the second region of the oxide semiconductor film,
wherein the third electrode is in contact with the third region of the oxide semiconductor film,
wherein the third insulating film is in contact with the fourth region and the fifth region of the oxide semiconductor film,
wherein the third insulating film is a nitride insulating film,
wherein the first region of the oxide semiconductor film is a channel formation region,
wherein each of the second to fifth region of the oxide semiconductor film has lower resistance than the first region of the oxide semiconductor film, and
wherein the first region of the oxide semiconductor film is in an oxygen-excess state.
10. The semiconductor device according to claim 9 , wherein the oxide semiconductor film comprises gallium.
11. The semiconductor device according to claim 9 , wherein the third insulating film is positioned over the second electrode and the third electrode.
12. The semiconductor device according to claim 9 , wherein a top surface of the second insulating film is in contact with the third insulating film.
13. The semiconductor device according to claim 9 , wherein the oxide semiconductor film is in an amorphous state.
14. The semiconductor device according to claim 9 ,
wherein the oxide semiconductor film comprises a sixth region and the seventh region,
wherein the second region of the oxide semiconductor film is positioned between the fourth region and the sixth region of the oxide semiconductor film,
wherein the third region of the oxide semiconductor film is positioned between the fifth region and the seventh region of the oxide semiconductor film, and
wherein each of the sixth region and the seventh region of the oxide semiconductor film is in an oxygen-excess state.
15. The semiconductor device according to claim 9 , wherein each of the second electrode and the third electrode is an oxide conductive film.
16. The semiconductor device according to claim 9 , wherein each of the second electrode and the third electrode comprises a crystalline region.
17. A semiconductor device comprising:
a first conductive film;
a first insulating film over the first conductive film;
an oxide semiconductor film comprising first to fifth regions over the first insulating film;
a second insulating film over the oxide semiconductor film;
a second electrode over and in contact with the oxide semiconductor film;
a third electrode over and in contact with the oxide semiconductor film; and
a third insulating film over the second insulating film and in contact with the oxide semiconductor film,
wherein the oxide semiconductor film comprises indium and zinc,
wherein the first region of the oxide semiconductor film is positioned between the second region and the third region of the oxide semiconductor film,
wherein the fourth region of the oxide semiconductor film is positioned between the first region and the second region of the oxide semiconductor film,
wherein the fifth region of the oxide semiconductor film is positioned between the first region and the third region of the oxide semiconductor film,
wherein the second electrode is in contact with the second region of the oxide semiconductor film,
wherein the third electrode is in contact with the third region of the oxide semiconductor film,
wherein the third insulating film is in contact with the fourth region and the fifth region of the oxide semiconductor film,
wherein the third insulating film is a nitride insulating film,
wherein the first region of the oxide semiconductor film is a channel formation region,
wherein each of the second to fifth region of the oxide semiconductor film has lower resistance than the first region of the oxide semiconductor film,
wherein the first region of the oxide semiconductor film is in an oxygen-excess state, and
wherein each of the fourth region and the fifth region of the oxide semiconductor film is an oxygen-deficient region.
18. The semiconductor device according to claim 17 , wherein the oxide semiconductor film comprises gallium.
19. The semiconductor device according to claim 17 , wherein the third insulating film is positioned over the second electrode and the third electrode.
20. The semiconductor device according to claim 17 , wherein a top surface of the second insulating film is in contact with the third insulating film.
21. The semiconductor device according to claim 17 , wherein the oxide semiconductor film is in an amorphous state.
22. The semiconductor device according to claim 17 ,
wherein the oxide semiconductor film comprises a sixth region and the seventh region,
wherein the second region of the oxide semiconductor film is positioned between the fourth region and the sixth region of the oxide semiconductor film,
wherein the third region of the oxide semiconductor film is positioned between the fifth region and the seventh region of the oxide semiconductor film, and
wherein each of the sixth region and the seventh region of the oxide semiconductor film is in an oxygen-excess state.
23. The semiconductor device according to claim 17 , wherein each of the second electrode and the third electrode is an oxide conductive film.
24. The semiconductor device according to claim 17 , wherein each of the second electrode and the third electrode comprises a crystalline region.