Techniques to combine two integrated photonic substrates
Structures and methods for passively aligning a photonic die with a receiving substrate are described. Three alignment surfaces, having dimensions greater than a desired alignment accuracy, may be formed on the photonic die and used to passively and accurately align the photonic die to a receiving substrate in six degrees of freedom. Two of the three alignment surfaces on the photonic die may be formed in a single mask-and-etch process, while the third alignment surface may require no patterning or etching. Three complementary alignment surfaces on the receiving substrate may be formed in a single mask-and-etch process.
1. A photonic die comprising:
a mesa;
a first optical waveguide formed on the mesa;
wherein the mesa comprises three contact alignment surfaces including a first wedge-shaped surface and two vertical walls contacting respective edges of the first wedge-shaped surface, wherein the three contact alignment surfaces are arranged to contact complementary alignment surfaces on a receiving substrate thereby providing sub-micron passive alignment of the first optical waveguide in at least three degrees of freedom to a second optical waveguide on the receiving substrate.
2. The photonic die of claim 1 , wherein the two vertical walls of the mesa are non-orthogonal surfaces.
3. The photonic die of claim 1 , wherein the three contact alignment surfaces, when contacting complementary alignment surfaces, provide passive alignment of the first optical waveguide to the second optical waveguide in six degrees of freedom.
4. The photonic die of claim 1 , wherein the at least three degrees of freedom are translational degrees of freedom, and wherein the alignment of the first optical waveguide to the second optical waveguide is within ±0.5 microns for at least two of the translational degrees of freedom.
5. The photonic die of claim 1 , wherein the mesa covers more than one-quarter a surface of the photonic die.
6. The photonic die of claim 1 , wherein a smallest dimension of any of the three contact alignment surfaces is at least 100 times larger than an alignment accuracy achieved between the first optical waveguide and second optical waveguide.
7. The photonic die of claim 1 , wherein the three contact alignment surfaces are on the mesa.
8. The photonic die of claim 1 , wherein the mesa forms a trapezoid.
9. The photonic die of claim 1 , wherein the three contact alignment surfaces are arranged, such that the photonic die may be placed in an unaligned position on the receiving substrate and slid into an aligned position.
10. The photonic die of claim 1 , further comprising an active optical device formed in the mesa and connected to the first optical waveguide.
11. The photonic die of claim 10 , wherein the active optical device is a semiconductor laser, a semiconductor optical amplifier, a semiconductor optical phase modulator, or a semiconductor optical amplitude modulator.
12. The photonic die of claim 1 , further comprising:
the receiving substrate attached to the photonic die; and
a hermetic seal bonded to the receiving substrate and enclosing the photonic die.
13. The photonic die of claim 12 , wherein the photonic die comprises a first type of semiconductor material and the receiving substrate comprises a second type of semiconductor material.
14. The photonic die of claim 12 , wherein the photonic die comprises group III-V materials and the receiving substrate comprises group V materials.
15. The photonic die of claim 12 , further comprising at least one additional waveguide on the photonic die aligned to at least one additional optical waveguide on the receiving substrate.
16. An apparatus comprising:
a photonic die including a mesa extending from a planar surface of the photonic die; and
an optical waveguide formed on the mesa, wherein the mesa has a wedge-shaped upper contact alignment surface parallel the planar surface of the photonic die and two additional contact alignment surfaces and wherein the wedge-shaped upper contact alignment surface and the two additional contact alignment surfaces are arranged to contact complementary alignment surfaces on a receiving substrate to provide sub-micron alignment of the optical waveguide to a second waveguide on the receiving substrate.
17. The apparatus of claim 16 , wherein the mesa constitutes more than 50% of a surface area of the photonic die.
18. The apparatus of claim 16 , further comprising an active optical device formed on the mesa.
19. The apparatus of claim 16 , wherein a first end and a second end of the optical waveguide are located at an edge of the mesa.
20. The photonic die of claim 1 , wherein the three contact alignment surfaces contact the complementary alignment surfaces on the receiving substrate.
21. The photonic die of claim 1 , wherein the three contact alignment surfaces are in contact with the complementary alignment surfaces on the receiving substrate when the photonic die is placed in an aligned position on the receiving substrate.