Silicon-nitride-containing thermal chemical vapor deposition coating
Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.
1. A process, comprising:
producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber;
wherein flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface;
wherein the producing includes introducing trisilylamine to the chamber;
wherein the introducing of the trisilylamine includes opening a flow control device connected to a vessel containing the trisilylamine while the chamber is at a first pressure and closing the flow control device when the pressure within the chamber is at a second pressure, the first pressure differing from the second pressure.
2. The process of claim 1 , wherein the producing further includes introducing ammonia to the chamber concurrent with introducing of the trisilylamine.
3. The process of claim 1 , wherein the producing further includes introducing ammonia to the chamber prior to the introducing of the trisilylamine.
4. The process of claim 1 , wherein the producing further includes introducing ammonia to the chamber after the introducing of the trisilylamine.
5. The process of claim 1 , wherein the producing is at a temperature of at least 325° C.
6. The process of claim 1 , wherein the producing includes oxidizing, the oxidizing being at a temperature of at least 300° C.
7. The process of claim 1 , wherein the silicon-nitride-containing thermal chemical vapor deposition coating is pure or substantially pure silicon nitride.
8. The process of claim 1 , wherein the silicon-nitride-containing thermal chemical vapor deposition coating includes silicon oxynitride.
9. The process of claim 1 , wherein the silicon-nitride-containing thermal chemical vapor deposition coating is functionalized.
10. The process of claim 1 , further comprising producing an additional silicon-nitride-containing thermal chemical vapor deposition coating on the silicon-nitride-containing thermal chemical vapor deposition coating.
11. The process of claim 10 , wherein the additional silicon-nitride-containing thermal chemical vapor deposition coating has a first thickness and the silicon-nitride-containing thermal chemical vapor deposition coating has a second thickness, the first thickness differing from the second thickness.
12. The process of claim 1 , wherein the surface is a metal or metallic.
13. The surface produced by the process of claim 1 .
14. A process, comprising:
producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber;
wherein flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface;
wherein the surface has at least a concealed portion that is obstructed from view.