IP Library › Granted Patent US 12,473,635
Granted Patent B2
US 12,473,635 · App. 17/328,317 · Granted Nov 18, 2025

Dielectric article

Inventors: Min Yuan (State College, PA); Jesse Bischof (Bellefonte, PA)
Assignee: Silcotek Corp.
C23C16/30C23C16/24H01P3/08Y10T428/265
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,473,635
App. No.
17/328,317
Granted
Nov 18, 2025
Kind
B2
Abstract

Dielectric coatings, articles having dielectric coatings, and systems including coating having dielectric coatings are disclosed. The dielectric article includes a substrate having hidden surfaces and a dielectric coating on the hidden surfaces of the substrate. The dielectric coating has a bulk resistivity of at least 10 8 Ω·cm and a thickness of between 30 nanometers and 3,000 nanometers.

Claims (29)

1 . A dielectric article, comprising:

a substrate having hidden surfaces; and

a dielectric coating on the hidden surfaces of the substrate, the dielectric coating having a bulk resistivity of at least 10 8 Ohms·cm and a thickness between 30 nanometers and 3,000 nanometers;

wherein the dielectric coating comprises silicon, oxygen, carbon, and hydrogen.

2 . The dielectric article of claim 1 , wherein the substrate further comprises visible surfaces and the dielectric coating is on the visible surfaces.

3 . The dielectric article of claim 1 , wherein the bulk resistivity at least 10 12 Ohms·cm.

4 . The dielectric article of claim 1 , wherein the bulk resistivity at least 10 13 Ohms·cm.

5 . The dielectric article of claim 1 , wherein the thickness is between 50 nanometers and 2,000 nanometers.

6 . The dielectric article of claim 1 , wherein the thickness is between 100 nanometers and 1,500 nanometers.

7 . The dielectric article of claim 1 , wherein the thickness is between 300 nanometers and 1,500 nanometers.

8 . The dielectric article of claim 1 , wherein the thickness is between 400 nanometers and 1,500 nanometers.

9 . The dielectric article of claim 1 , wherein the thickness is between 500 and 1,500 nanometers.

10 . The dielectric article of claim 1 , wherein the dielectric coating comprises multiple layers having amorphous silicon and hydrogen.

11 . The dielectric article of claim 1 , wherein the dielectric coating comprises silicon, nitrogen, and hydrogen.

12 . The dielectric article of claim 1 , wherein the dielectric article is a portion of an antenna.

13 . The dielectric article of claim 1 , wherein the dielectric article is an antenna.

14 . A radio frequency (rf) system containing the dielectric article of claim 1 .

15 . A transmission line containing the dielectric article of claim 1 .

16 . The dielectric article of claim 1 , wherein the substrate is a stainless steel.

17 . The dielectric article of claim 1 , wherein the substrate is an aluminum alloy.

18 . A dielectric article, comprising:

a stainless steel substrate having hidden surfaces and visible surfaces; and

a silicon-containing dielectric coating on the hidden surfaces and the visible surfaces of the stainless steel substrate, the silicon-containing dielectric coating having a bulk resistivity of at least 10 12 Ohms·cm and a thickness of between 100 nanometers and 1,500 nanometers;

wherein the dielectric coating comprises silicon, oxygen, carbon, and hydrogen.

19 . A dielectric article, comprising:

a metallic substrate having hidden surfaces and visible surfaces; and

a silicon-containing dielectric coating on the hidden surfaces and the visible surfaces of the metallic substrate, the silicon-containing dielectric coating having a bulk resistivity of at least 10 12 Ohms·cm and a thickness of between 100 nanometers and 1,500 nanometers;

wherein the dielectric coating comprises multiple layers having amorphous silicon and hydrogen;

wherein the dielectric coating comprises silicon, oxygen, carbon, and hydrogen.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 24, 2021
From: YUAN, MIN; BISCHOF, JESSE
To: SILCOTEK CORP.
Reel/Frame 056331/0979 →
Continuity (2)
Provisional Application 63034126 · Jun 3, 2020
Related Publication 20210384601A1 · Dec 9, 2021
References Cited (144)
US 4173661A · Bourdon · 1979 [cited by applicant]
US 4402997A · Hogan et al. · 1983 [cited by applicant]
US 4560589A · Endou et al. · 1985 [cited by applicant]
US 4579752A · Dubois et al. · 1986 [cited by applicant]
US 4671997A · Galasso et al. · 1987 [cited by applicant]
US 4684542A · Jasinski et al. · 1987 [cited by applicant]
US 4714632A · Cabrera et al. · 1987 [cited by applicant]
US 4720395A · Foster · 1988 [cited by applicant]
US 4741964A · Haller · 1988 [cited by applicant]
US 4749631A · Haluska et al. · 1988 [cited by applicant]
US 4753856A · Haluska et al. · 1988 [cited by applicant]
US 4792460A · Chu et al. · 1988 [cited by applicant]
US 4842888A · Haluska et al. · 1989 [cited by applicant]
US 4956204A · Amazawa et al. · 1990 [cited by applicant]
US 5128515A · Tanaka · 1992 [cited by applicant]
US 5141567A · Tahara · 1992 [cited by applicant]
US 5160544A · Garg et al. · 1992 [cited by applicant]
US 5208069A · Clark et al. · 1993 [cited by applicant]
US 5249554A · Tamor et al. · 1993 [cited by applicant]
US 5250451A · Chouan · 1993 [cited by applicant]
US 5270082A · Lin et al. · 1993 [cited by applicant]
US 5299731A · Liyanage et al. · 1994 [cited by applicant]
US 5413813A · Cruse et al. · 1995 [cited by applicant]
US 5474613A · Pickering et al. · 1995 [cited by applicant]
US 5480677A · Li et al. · 1996 [cited by applicant]
US 5481135A · Chandra et al. · 1996 [cited by applicant]
US 5510146A · Miyasaki · 1996 [cited by applicant]
US 5562952A · Nakahigashi et al. · 1996 [cited by applicant]
US 5563102A · Michael · 1996 [cited by applicant]
US 5756404A · Friedenreich et al. · 1998 [cited by applicant]
US 5818071A · Loboda et al. · 1998 [cited by applicant]
US 5825078A · Michael · 1998 [cited by applicant]
US 5874368A · Laxman et al. · 1999 [cited by applicant]
US 5939333A · Hurley et al. · 1999 [cited by applicant]
US 5981403A · Ma et al. · 1999 [cited by applicant]
US 5994675A · Bethune et al. · 1999 [cited by applicant]
US 5997742A · Gjerde et al. · 1999 [cited by applicant]
US 6157003A · Drimer · 2000 [cited by applicant]
US 6159871A · Loboda et al. · 2000 [cited by applicant]
US 6312808B1 · Veerasamy et al. · 2001 [cited by applicant]
US 6319556B1 · Olsen et al. · 2001 [cited by applicant]
US 6337459B1 · Terwijn et al. · 2002 [cited by applicant]
US 6416577B1 · Suntoloa et al. · 2002 [cited by applicant]
US 6416816B2 · Veerasamy et al. · 2002 [cited by applicant]
US 6444268B2 · Lefcowitz et al. · 2002 [cited by applicant]
US 6444326B1 · Smith · 2002 [cited by applicant]
US 6472076B1 · Hacker · 2002 [cited by applicant]
US 6511760B1 · Barone et al. · 2003 [cited by applicant]
US 6531182B2 · Veerasamy et al. · 2003 [cited by applicant]
US 6531398B1 · Gaillard et al. · 2003 [cited by applicant]
US 6531415B1 · Yang et al. · 2003 [cited by applicant]
US 6566281B1 · Buchanan et al. · 2003 [cited by applicant]
US 6592993B2 · Veerasamy et al. · 2003 [cited by applicant]
US 6593655B1 · Loboda et al. · 2003 [cited by applicant]
US 6630413B2 · Todd · 2003 [cited by applicant]
US 6765178B2 · Shang et al. · 2004 [cited by applicant]
US 6998579B2 · Inagawa et al. · 2006 [cited by applicant]
US 7022948B2 · Shang et al. · 2006 [cited by applicant]
US 7070833B2 · Smith et al. · 2006 [cited by applicant]
US 7192626B2 · Dussarrat et al. · 2007 [cited by applicant]
US 7429717B2 · Yudovsky · 2008 [cited by applicant]
US 7510935B2 · Lee et al. · 2009 [cited by applicant]
US 7860379B2 · Hunter et al. · 2010 [cited by applicant]
US 7867627B2 · Smith et al. · 2011 [cited by applicant]
US 7875556B2 · Xiao et al. · 2011 [cited by applicant]
US 8092770B2 · Betz et al. · 2012 [cited by applicant]
US 8286571B2 · Driver et al. · 2012 [cited by applicant]
US 8357430B2 · Dussarrat et al. · 2013 [cited by applicant]
US D689107S · Grove · 2013 [cited by applicant]
US 8552346B2 · Ambal et al. · 2013 [cited by applicant]
US 8563445B2 · Liang et al. · 2013 [cited by applicant]
US D713024S · Grove et al. · 2014 [cited by applicant]
US 8822018B2 · Thoumazet et al. · 2014 [cited by applicant]
US 8980382B2 · Ingle et al. · 2015 [cited by applicant]
US 9198283B2 · Ellinger · 2015 [cited by examiner]
US 9340880B2 · Mattzela · 2016 [cited by applicant]
US 9777368B2 · Smith et al. · 2017 [cited by applicant]
US 9915001B2 · Yuan et al. · 2018 [cited by applicant]
US 9975143B2 · Smith et al. · 2018 [cited by applicant]
US 10087521B2 · Yuan · 2018 [cited by examiner]
US 10316408B2 · Smith et al. · 2019 [cited by applicant]
US 10323321B1 · Yuan et al. · 2019 [cited by applicant]
US 10487402B2 · Yuan et al. · 2019 [cited by applicant]
US 10487403B2 · Smith · 2019 [cited by applicant]
US 10604660B2 · Smith et al. · 2020 [cited by applicant]
US 20010049203A1 · Kim et al. · 2001 [cited by applicant]
US 20010055672A1 · Todd · 2001 [cited by applicant]
US 20020045009A1 · Tobaski et al. · 2002 [cited by applicant]
US 20030141499A1 · Venkatraman · 2003 [cited by examiner]
US 20030152701A1 · Kang et al. · 2003 [cited by applicant]
US 20030186000A1 · Li et al. · 2003 [cited by applicant]
US 20040037956A1 · Yang · 2004 [cited by applicant]
US 20040175579A1 · Smith et al. · 2004 [cited by applicant]
US 20050064684A1 · Todd et al. · 2005 [cited by applicant]
US 20050100670A1 · Dussarrat et al. · 2005 [cited by applicant]
US 20050183663A1 · Cheng et al. · 2005 [cited by applicant]
US 20050271893A1 · Kobrin et al. · 2005 [cited by applicant]
US 20060216952A1 · Bhanap et al. · 2006 [cited by applicant]
US 20070042118A1 · Yoo · 2007 [cited by applicant]
US 20070243317A1 · DuBois et al. · 2007 [cited by applicant]
US 20070281448A1 · Chen et al. · 2007 [cited by applicant]
US 20090078202A1 · Strikovski et al. · 2009 [cited by applicant]
US 20090230558A1 · Matsuoka · 2009 [cited by applicant]
US 20100248496A1 · Wei et al. · 2010 [cited by applicant]
US 20110215445A1 · Yang · 2011 [cited by examiner]
US 20110259879A1 · Hanawa et al. · 2011 [cited by applicant]
US 20110305784A1 · Lee · 2011 [cited by applicant]
US 20120045954A1 · Bleecher et al. · 2012 [cited by applicant]
US 20120219727A1 · Gandhiraman et al. · 2012 [cited by applicant]
US 20120251797A1 · Smith et al. · 2012 [cited by applicant]
US 20130244025A1 · Smith et al. · 2013 [cited by applicant]
US 20140256156A1 · Harada et al. · 2014 [cited by applicant]
US 20140370300A1 · Smith · 2014 [cited by applicant]
US 20150024152A1 · Carr et al. · 2015 [cited by applicant]
US 20150030885A1 · Smith · 2015 [cited by applicant]
US 20150206795A1 · Hasebe et al. · 2015 [cited by applicant]
US 20150283307A1 · Smith et al. · 2015 [cited by applicant]
US 20150371991A1 · Nobuto · 2015 [cited by applicant]
US 20160049309A1 · Tapily et al. · 2016 [cited by applicant]
US 20160354758A1 · Gorecki et al. · 2016 [cited by applicant]
US 20180258529A1 · Vezza · 2018 [cited by examiner]
US 20180318742A1 · Bevis · 2018 [cited by applicant]
US 20190003044A1 · Yuan · 2019 [cited by applicant]
US 20190086371A1 · Lauber et al. · 2019 [cited by applicant]
CN 100347834 · 2007 [cited by applicant]
CN 104294236A · 2015 [cited by applicant]
DE 2523257 · 1976 [cited by applicant]
DE 2829568 · 1980 [cited by applicant]
EP 0911307A1 · 1999 [cited by applicant]
EP 1150345A2 · 2001 [cited by applicant]
EP 0996767B1 · 2003 [cited by applicant]
EP 1790757A1 · 2007 [cited by applicant]
EP 1988190A2 · 2008 [cited by applicant]
GB 2395492A · 2004 [cited by applicant]
JP 2012138627A · 2012 [cited by applicant]
JP 2013227628A · 2013 [cited by applicant]
WO 9902757A1 · 1999 [cited by applicant]
WO 0136190A1 · 2001 [cited by applicant]
WO 2009032488A1 · 2009 [cited by applicant]
WO 2009143618A1 · 2009 [cited by applicant]
WO 2010125926A1 · 2010 [cited by applicant]
WO 2010079299A1 · 2010 [cited by applicant]
WO 2011056550A1 · 2011 [cited by applicant]
WO 2012047945A2 · 2012 [cited by applicant]