Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture
Semiconductor integrated circuits ( 110 ) or assemblies are disposed at least partially in cavities between two interposers ( 120 ). Conductive vias ( 204 M) pass through at least one of the interposers or at least through the interposer's substrate, and reach a semiconductor integrated circuit or an assembly. Other conductive vias ( 204 M. 1 ) pass at least partially through multiple interposers and are connected to conductive vias that reach, or are capacitively coupled to, a semiconductor IC or an assembly. Other features are also provided.
1. A microelectronic assembly comprising:
a plurality of interposers overlying one another and comprising a set of at least two interposers each of which comprises one or more first contact pads;
a plurality of first modules each of which is attached to at least one of the interposers and comprises a respective semiconductor integrated circuit and one or more contact pads each of which is electrically coupled to the integrated circuit and connected to a respective first contact pad, wherein each interposer in the set has a first contact pad connected to a contact pad of a first module;
wherein at least one of the interposers comprises one or more first cavities, and at least part of each first module is located in at least one respective first cavity;
wherein the microelectronic assembly further comprises:
one or more first conductive vias each of which passes through at least part of at least respective one of the interposers and reaches at least one respective first cavity and physically contacts, or is capacitively coupled to, circuitry of at least one respective first module at least partially located in the respective first cavity;
one or more second conductive vias each of which has a segment which at least partially passes through at least respective two of the interposers outside of any first cavity which have respective first conductive vias.
2. The microelectronic assembly of claim 1 wherein for at least one second conductive via, the respective first conductive vias are electrically coupled to said segment of the second conductive via.
3. The microelectronic assembly of claim 1 wherein each interposer has a substrate, and each first conductive via passes through the respective interposer's substrate.
4. The microelectronic assembly of claim 3 wherein each substrate is a semiconductor substrate.
5. The microelectronic assembly of claim 1 wherein at least one first conductive via enters a semiconductor substrate of at least one semiconductor integrated circuit of at least one first module.
6. The microelectronic assembly of claim 1 wherein at least one first conductive via passes through a semiconductor substrate of at least one semiconductor integrated circuit of at least one first module.
7. The microelectronic assembly of claim 1 wherein each via of the first and second conductive vias extends along a vertical axis which is an imaginary line passing through the via.
8. The microelectronic assembly of claim 1 wherein at least one first conductive via enters at least one respective first module.
9. A microelectronic assembly comprising:
a plurality of interposers overlying one another, each interposer comprising one or more first contact pads;
a plurality of first modules each of which is attached to at least one of the interposers and comprises a respective semiconductor integrated circuit and one or more contact pads each of which is electrically coupled to the integrated circuit and connected to a respective first contact pad, wherein at least one said interposer has a first contact pad connected to a contact pad of a first module;
wherein at least one of the interposers comprises one or more first cavities, each first cavity being located between two of the interposers, and at least part of each first module is located in at least one respective first cavity;
wherein the microelectronic assembly further comprises one or more first conductive vias, each first conductive via extending along a vertical axis which is an imaginary line passing through the via, each first conductive via passing through at least part of at least one respective interposer and reaching a respective first cavity and physically contacting, or being capacitively coupled to, circuitry of at least one respective first module at least partially located in the respective first cavity.
10. The microelectronic assembly of claim 9 wherein at least one first conductive via passes through a substrate of at least one respective interposer bounding the respective first cavity.
11. The microelectronic assembly of claim 10 wherein the substrate of the at least one respective interposer is a semiconductor substrate.
12. The microelectronic assembly of claim 10 wherein at least one first conductive via enters a semiconductor substrate of at least one semiconductor integrated circuit of at least one respective first module on a first side of the respective first module, and the respective first module has one or more contact pads on a second side opposite from the first side.
13. The microelectronic assembly of claim 12 wherein said at least one first conductive via has a first end in the semiconductor substrate of said at least one semiconductor integrated circuit of the first module and has another end at a contact pad of the microelectronic assembly.