Processor having a programmable function unit
A processor comprising an ALU a programmable function unit wherein the functional unit may be programmed to comprise multistage logic.
1. A data processing device comprising:
a first semiconductor die;
a second semiconductor die; and
an interconnect that includes a common wiring layer;
wherein:
the common wiring layer includes a bus system having a bus and switching elements;
each of the first and second semiconductor dies is directly electrically connected to the bus system, thereby connecting the first and second semiconductor dies to each other;
one of the first and second semiconductor dies is mounted above the other of the first and second semiconductor dies;
the data processing device includes a plurality of data processing units of which at least some include respective Arithmetic Logic Units (ALUs);
the first semiconductor die is a logic semiconductor that includes one or more of the plurality of data processing units;
the second semiconductor die is a memory semiconductor that includes at least a portion of a memory accessible to the one or more of the plurality of data processing units included in the first semiconductor die via the connection of the first and second dies to each other using the bus and switching elements of the bus system; and
with respect to each of at least one of the first and second semiconductor dies, the common wiring layer is arranged entirely as a single layer below or above the respective semiconductor die.
2. The data processing device of claim 1 , wherein the first semiconductor die does not include any of the memory.
3. The data processing device of claim 2 , wherein the second semiconductor die does not include any of the plurality of data processing units.
4. The data processing device of claim 1 , wherein the second semiconductor die does not include any of the plurality of data processing units.
5. The data processing device of claim 1 , wherein the memory of the second semiconductor die is DRAM memory.
6. The data processing device of claim 1 , wherein the memory of the second semiconductor die includes a plurality of like memory cells.
7. The data processing device of claim 1 , wherein the memory of the second semiconductor die includes redundant memory.
8. The data processing device of claim 1 , further comprising a third semiconductor die, wherein the third semiconductor die is also a memory semiconductor that includes another portion of the memory, and wherein the second and third semiconductor dies are stacked.
9. The data processing device of claim 8 , wherein the second and third semiconductor dies are stacked via reflow-soldering.
10. The data processing device of claim 8 , wherein the second and third semiconductor dies are stacked via thermocompression.
11. The data processing device of claim 8 , wherein the second and third semiconductor dies are stacked via gluing.
12. The data processing device of claim 1 , further comprising bumps between the first and second semiconductor dies.
13. The data processing device of claim 12 , wherein the bumps are electrically conductive and electrical signals are transmittable between the first and second semiconductor dies via the bumps.
14. The data processing device of claim 1 , wherein copper or aluminum electrical conductors are provided for the electrical interconnection of the first and second semiconductor dies.
15. The data processing device of claim 1 , wherein respective widths of the first and second dies are different, thereby forming a stepped structure, and the interconnect includes a wire that extends from (a) on a portion of a surface of the wider one of the first and second dies that is at a lateral coordinate at which the other of the first and second dies is not located to (b) the other of the first and second dies.
16. The data processing device of claim 1 , wherein respective widths of the first and second dies are different.
17. A processor device comprising:
a first die that includes a plurality of data processing cores;
a second die whose functionality differs from a functionality of the first die; and
a third die including a common wiring layer to which each of the first and second dies are directly electrically connected, thereby connecting the first and second dies to each other, wherein:
the common wiring layer includes a bus system having a bus and switching elements;
respective ones of the plurality of data processing cores of the first die are selectively connectable by the processor device to respective ones of a plurality of components of the second die using the bus and the switching elements; and
with respect to each of at least one of the first and second dies, the third die is arranged entirely below or above the respective die.
18. The processor device of claim 17 , wherein the functionality of the second die is as a memory that is accessible to the data processing cores of the first die.
19. A processor integrated device comprising:
an interconnect structure;
a plurality of programmable data processing units interconnected by the interconnect structure, wherein at least some of the programmable data processing units include Arithmetic Logic Units (ALUs); and
two dies;
wherein:
an entirety of one of the two dies is stacked on top of the other of the two dies;
the plurality of programmable data processing units are implemented on at least a first one of the two dies;
at least parts of the interconnect structure are implemented on at least a second one of the two dies;
the interconnect structure includes a common wiring layer to which each of the first and second dies are directly electrically connected, thereby connecting the first and second dies to each other;
the common wiring layer includes a bus system having a bus and switching elements; and
respective ones of the plurality of programmable data processing units are selectively connectable by the processor device to respective other ones of the plurality of programmable data processing units via the bus and the switching elements of the interconnect structure.