Interconnect structure having tungsten contact copper wiring
Aspects of the present disclosure include interconnect structures for an integrated circuit (IC) structure and methods of making the same. The interconnect structures include one or more electronic devices formed on a substrate. A first interlevel dielectric (ILD) layer is over the one or more electronic devices. The interconnect structure includes a first trench in the first ILD layer. A tungsten contact fills the first trench and is in electrical contact with the one or more electronic devices. A second ILD layer is over the first ILD layer. The interconnect structure includes a second trench in the second ILD layer. Diffusion barrier liners bound all sides of the second trench except at a surface of the tungsten contact. The interconnect structure includes a copper wire filling the second trench, the copper wire in direct contact with the tungsten contact and with the diffusion barrier liners.
1. An interconnect structure for one or more electronic devices formed on a substrate, the interconnect structure comprising:
a first interlevel dielectric (ILD) layer over the one or more electronic devices;
a first trench in the first ILD layer;
a tungsten contact filling the first trench and in electrical contact with the one or more electronic devices;
a second ILD layer over the first ILD layer;
a second trench in the second ILD layer over the tungsten contact;
diffusion barrier liners on all sides of the second trench except at a surface of the tungsten contact, wherein the diffusion barrier liners are selected from the group consisting of: titanium nitride (TiN), tantalum nitride (TaN), tantalum (Ta), ruthenium (Ru), ruthenium nitride (RuN), tungsten (W), tungsten nitride (WN), tungsten silicide (WSi), and titanium (Ti); and
a copper wire filling the second trench, the copper wire in direct contact with the tungsten contact and with the diffusion barrier liners.
2. The interconnect structure of claim 1 , wherein the one or more electronic devices are selected from the group consisting of: capacitors, diodes, resistors, transistors, memory cells, varactors, active devices and passive devices.
3. The interconnect structure of claim 1 , wherein the copper wire has a thickness ranging from approximately 5 nanometers (nm) to approximately 3000 nm.
4. The interconnect structure of claim 1 , wherein the first ILD layer and is selected from the group consisting of: silicon nitride (Si 3 N 4 ), silicon oxide (SiO 2 ), fluorinated SiO 2 (FSG), hydrogenated silicon oxycarbide (SiCOH), porous SiCOH, boro-phospho-silicate glass (BPSG), silsesquioxanes, polymers, carbon (C) doped oxides, phosphorous doped oxides, boron doped oxides and thermosetting polyarylene ethers.
5. The interconnect structure of claim 1 , wherein the second ILD layer and is selected from the group consisting of: silicon nitride (Si 3 N 4 ), silicon oxide (SiO 2 ), fluorinated silicate glass (FSG), hydrogenated silicon oxycarbide (SiCOH), porous SiCOH, boro-phospho-silicate glass (BPSG), silsesquioxanes, polymers, carbon (C) doped oxides, phosphorous doped oxides, boron doped oxides and thermosetting polyarylene ethers.
6. The interconnect structure of claim 1 , wherein the diffusion barrier liner at the bottom of the second trench comprises a dielectric.