Granted Patent B2

US 9,620,220 · App. 15/043,443 · Granted Apr 11, 2017

Abstract

Claims (49)

1. A data storage device comprising:

a non-volatile memory array comprising a plurality of non-volatile memory devices; and

a memory controller configured to:

write raw data to a memory unit of the non-volatile memory array;

write, in connection with the writing of the raw data, metadata to a memory indicating a number of bits of the written raw data;

read, after the write, the raw data and metadata from memory unit;

determine a difference between the read raw data and the number of bits of the written raw data indicated by the read metadata; and

determine a measure of data retention for the memory unit based on the determined difference.

2. The data storage device of claim 1 , wherein the controller is further configured to write the metadata interleaved with dummy bits to reduce cell-to-cell interference.

3. The storage device of claim 1 , wherein the memory controller is further configured to:

schedule a data refreshing operation based on the determined measure of data retention.

4. The storage device of claim 3 , wherein the memory controller is further configured to:

determine a raw bit error rate associating with the reading, at least in part based on the determined measure of data retention, wherein the data refreshing operation is also scheduled based on the raw bit error rate.

5. The storage device of claim 1 , wherein the memory controller is further configured to:

adjust, based on the determined measure of data retention, a voltage level used to read bit values from memory cells in the non-volatile memory array.

6. The storage device of claim 1 , wherein the metadata is stored in the memory unit with the written raw data.

7. The storage device of claim 6 , wherein the memory unit is a page of memory, and wherein the number of bits of the written raw data indicated by the metadata is stored in a spare area of the page of memory.

8. The storage device of claim 1 , wherein the memory unit is part of a first memory device of the non-volatile memory array, and wherein the metadata is stored in a second memory device of the non-volatile memory array.

9. The storage device of claim 1 , wherein the number of bits of the written raw data indicated by the metadata is a number of binary zeros or a number of binary ones making up the raw data.

10. The storage device of claim 1 , wherein memory controller being configured to write the metadata comprises the memory controller being configured to:

interleave dummy bits within the written metadata.

11. The storage device of claim 1 , wherein the memory controller being configured to read comprises the memory controller being configured to:

initiate a read of an upper page of memory cells;

determine a memory operation failure in connection with the reading of the upper page of memory cells; and

read, responsive to the memory operation failure, a lower page of memory cells paired with the upper page of memory cells; and

determine, based on reading the lower page, a first count of the upper memory cells corresponding to a highest voltage state of a plurality of memory states,

wherein the memory controller being configured to determine the difference between the read raw data and the number of bits of the written raw data comprises the memory controller being configured to determine a difference between the first count and a second count, stored in the metadata, of upper memory cells programmed to the highest voltage state.

12. A method of managing data retention in a data storage system comprising a non-volatile memory array, the method comprising:

writing raw data to a memory unit of a non-volatile memory array;

writing, in connection with the writing of the raw data, metadata to a memory indicating a number of bits of the written raw data;

reading the written raw data and the written metadata;

determining a difference between the read raw data and the number of bits of the written raw data indicated by the read metadata; and

determining a measure of data retention for a group of memory cells in the non-volatile memory array based on the determined difference.

13. The method of claim 12 , further comprising:

scheduling a data refreshing operation based on the determined measure of data retention.

14. The method of claim 13 , further comprising:

determining a raw bit error rate associating with the reading, at least in part based on the determined measure of data retention, wherein the scheduling is also based on the raw bit error rate.

15. The method of claim 12 , further comprising:

adjusting, based on the determined measure of data retention, a voltage level used to read bit values from memory cells in the non-volatile memory array.

16. The method of claim 12 , wherein the metadata is stored in the memory unit with the written raw data.

17. The method of claim 16 , wherein memory unit is a page of memory, and wherein the number of bits of the written raw data indicated by the read metadata is stored in a spare area of the page of memory.

18. The method of claim 12 , wherein the memory unit is part of a first memory device of the non-volatile memory array, and wherein the metadata is stored in a second memory device of the non-volatile memory array.

19. The method of claim 12 , wherein the number of bits of the written raw data is a number of binary zeros or a number of binary ones making up the raw data.

20. The method of claim 12 , wherein the reading comprises:

initiating a read of an upper page of memory cells;

determining a memory operation failure in connection with the reading of the upper page of memory cells; and

reading, responsive to the memory operation failure, a lower page of memory cells paired with the upper page of memory cells; and

determining, based on reading the lower page, a first count of the upper memory cells corresponding to a highest voltage state of a plurality of memory states,

wherein determining the difference between the read raw data and the number of bits of the written raw data indicated by the read metadata comprises determining a difference between the first count and a second count, stored in the metadata, of upper memory cells programmed to the highest voltage state.

Assignments (9)