Interconnect structure and method of forming
Aspects of the present disclosure include a method of forming a semiconductor interconnect structure and the interconnect structure. The method includes etching an opening in a first interconnect dielectric material. The method includes performing a nitridation process that converts the surfaces of the opening into nitride residues, and forms a nitrided interconnect dielectric material surface in the opening. The method includes depositing tantalum to create a tantalum layer on the nitrided interconnect dielectric surface region. The method includes depositing copper to fill the opening and planarizing the surface of the first dielectric material.
1. A method of forming a semiconductor interconnect structure comprising:
etching an opening in a first interconnect dielectric material;
performing a nitridation process that converts surfaces of the opening of the first interconnect dielectric material into nitrided residues, and forms a nitrided interconnect dielectric material surface in the opening, wherein the nitrided interconnect dielectric material has a nitrogen content of from 2 weight percent nitrogen to 10 weight percent nitrogen;
depositing tantalum to create a tantalum layer directly on the nitrided interconnect dielectric material surface;
depositing copper to fill the opening, such that the tantalum layer is interposed directly between the nitride interconnect dielectric material and the deposited copper; and
planarizing a surface of the first interconnect dielectric material.
2. The method of claim 1 , wherein performing the nitridation process comprises a thermal nitridation process.
3. The method of claim 2 , wherein the thermal nitridation process includes heating the semiconductor interconnect structure to a temperature from about 80° C. to about 400° C.
4. The method of claim 1 , further comprising cleaning the opening prior to performing the nitridation process.
5. The method of claim 4 , wherein the cleaning and performing the nitridation process are carried out in a single chamber.
6. The method of claim 1 , further comprising cleaning the opening after performing the nitridation process.
7. The method of claim 6 , wherein the performing the nitridation process and cleaning are carried out in a single chamber.
8. The method of claim 1 , wherein performing the nitridation process comprises performing a plasma nitridation process.
9. The method of claim 1 , wherein the first interconnect dielectric material is disposed on a second interconnect dielectric material, the second interconnect dielectric material having at least one electronic device having an upper surface that is coplanar with an upper surface of the second interconnect dielectric material.
10. The method of claim 9 , wherein the opening exposes a portion of an upper surface of the at least one electronic device.
11. The method of claim 9 , wherein the at least one electronic device comprises a capacitor, a diode, a resistor, a wiring structure, a transistor, an inductor or a varactor.
12. The method of claim 1 , wherein the first interconnect dielectric material layer is selected from the group consisting of: silicon nitride (Si3N4), silicon oxide (SiO2), fluorinated SiO2 (FSG), hydrogenated silicon oxycarbide (SiCOH), porous SiCOH, boro-phospho-silicate glass (BPSG), silsesquioxanes, carbon (C) doped oxides and thermosetting polyarylene ethers.
13. An interconnect structure comprising:
an interconnect dielectric material over a substrate;
at least one trench formed in the interconnect dielectric material;
a nitride layer disposed on sidewalls and bottom surface of the at least one trench wherein the nitride layer comprises a nitrided interconnect dielectric material having a nitrogen content of from 2 weight percent nitrogen to 10 weight percent nitrogen;
a metal film disposed directly on the nitride layer; and
a conductive wire filling the at least one trench, wherein the metal film is interposed directly between the nitride layer and the conductive wire.
14. The interconnect structure of claim 13 , wherein the nitride layer has a thickness of from about 10 angstroms to 30 angstroms.
15. The interconnect structure of claim 13 , wherein the metal film comprises a pure metal selected from the group consisting of tantalum (Ta), titanium (Ti), tungsten (W), cobalt (Co), ruthenium (Ru), rhodium (Rh) and copper (Cu).
16. The interconnect structure of claim 13 , wherein the metal film has a thickness of from about 10 angstroms to 20 angstroms.
17. The interconnect structure of claim 13 , wherein the conductive wire is a material selected from aluminum, cobalt, tungsten, ruthenium and copper.
18. An interconnect structure comprising:
an interconnect dielectric material over a substrate, the substrate having an electronic device disposed therein;
at least one trench formed in the interconnect dielectric material, the trench exposing a surface of the electronic device;
a nitride layer disposed on sidewalls of the trench wherein the nitride layer comprises a nitrided interconnect dielectric material having a nitrogen content of from 2 weight percent nitrogen to 10 weight percent nitrogen;
a tantalum layer disposed directly on the nitride layer and the surface of the electronic device, wherein the tantalum layer has a thickness of from about 10 angstroms to about 20 angstroms; and
a copper wire filling the at least one trench, wherein the tantalum layer is interposed directly between the nitride layer and the conductive wire.
19. The method of claim 1 , further comprising, after forming the opening, performing a silyation process to form a dense and dehydrated interconnect dielectric material surface in the opening.
20. The interconnect structure of claim 18 , wherein the interconnect dielectric material has a dielectric constant of at most about 2.8.