Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.
1. A structure, comprising a semiconductor region in a substrate, a metal electrical contact to said semiconductor region, and a passivating dielectric tunnel barrier layer between said semiconductor region and said metal electrical contact, said semiconductor region being electrically connected to said metal electrical contact through said passivating dielectric tunnel barrier layer, wherein said passivating dielectric tunnel barrier layer comprises a metal oxide and a semiconductor oxide.
2. The structure of claim 1 , wherein the semiconductor oxide comprises an oxide of the semiconductor region.
3. The structure of claim 1 , wherein the semiconductor oxide of the dielectric tunnel barrier layer has a thickness of approximately 0.1 nm to 5 nm.
4. The structure of claim 3 , wherein the semiconductor region comprises an n-type doped source or drain of a transistor.
5. The structure of claim 3 , wherein the metal electrical contact is a metal or a stack of metals deposited on the dielectric tunnel barrier layer.
6. The structure of claim 3 , wherein the metal oxide of the dielectric tunnel barrier layer comprises an oxide of titanium.
7. The structure of claim 6 , wherein the semiconductor oxide of the dielectric tunnel barrier layer has a thickness of approximately less than 1 nm.
8. The structure of claim 6 , wherein the semiconductor region comprises an n-type doped source or drain of a transistor.
9. The structure of claim 6 , wherein the metal electrical contact is a metal or a stack of metals deposited on the dielectric tunnel barrier layer.
10. The structure of claim 6 , wherein the semiconductor oxide comprises an oxide of silicon.
11. The structure of claim 6 , wherein the semiconductor oxide of the dielectric tunnel barrier layer is adjacent the semiconductor region.
12. The structure of claim 6 , wherein the metal electric contact comprises titanium.
13. The structure of claim 3 , wherein the semiconductor oxide comprises an oxide of silicon.
14. The structure of claim 13 , wherein the metal electrical contact is a metal or a stack of metals deposited on the dielectric tunnel barrier layer.
15. The structure of claim 13 , wherein the metal oxide of the dielectric tunnel barrier layer comprises an oxide of titanium.
16. The structure of claim 15 , wherein the metal electrical contact comprises titanium.
17. The structure of claim 15 , wherein the semiconductor comprises an n-type doped source or drain of a transistor.
18. The structure of claim 17 , wherein a specific contact resistivity between the n-type doped source or drain and the metal electric contact is less than 1 Ω·μm 2 .
19. The structure of claim 1 , wherein the semiconductor region comprises silicon, the semiconductor oxide comprises an oxide of silicon, the metal oxide of the dielectric tunnel barrier layer comprises an oxide of titanium, and the metal electrical contact comprises titanium.
20. The structure of claim 1 , wherein the dielectric tunnel barrier layer is configured to reduce a height of a Schottky barrier between the metal electrical contact and the semiconductor region from that which would exist at a contact junction between the metal electrical contact and the semiconductor region without the dielectric tunnel barrier layer disposed therebetween.
21. The structure of claim 1 , wherein for a specified contact resistivity of the structure the dielectric tunnel barrier layer has a thickness less than that which would exist for a silicide layer at a contact junction between the metal electrical contact and the semiconductor region.
22. The structure of claim 1 , wherein the dielectric tunnel barrier layer is configured to reduce contact resistivity between the metal electrical contact and the semiconductor region from that which would exist at a contact junction between the metal electrical contact and the semiconductor region without the dielectric tunnel barrier layer disposed therebetween.
23. The structure of claim 1 , wherein the semiconductor oxide of the dielectric tunnel barrier layer comprises an oxide of silicon having a thickness of approximately 0.1 nm to 5 nm, the semiconductor region comprises an n-type doped source or drain of a transistor, and the metal electrical contact comprises an oxide of titanium.
24. The structure of claim 23 , wherein the semiconductor oxide of the dielectric tunnel barrier layer is adjacent the semiconductor region.
25. An electrical junction comprising an interface layer disposed between a contact metal and a semiconductor, the semiconductor comprising a source or drain of a transistor, the interface layer comprising a metal oxide separation layer and a semiconductor oxide passivation layer and configured to provide a specific contact resistivity between the contact metal and the semiconductor of less than 1 Ω·μm 2 .
26. The electrical junction of claim 25 , wherein the metal oxide separation layer comprises an oxide of titanium.
27. The electrical junction of claim 26 , wherein the semiconductor oxide passivation layer comprises an oxide of the semiconductor.
28. The electrical junction of claim 27 , wherein the semiconductor oxide passivation layer has a thickness of approximately 0.1 nm to 5 nm.
29. The electrical junction of claim 27 , wherein the semiconductor oxide passivation layer is adjacent the semiconductor.
30. The electrical junction of claim 25 , wherein the contact metal is a metal or a stack of metals deposited on the interface layer.