Light emitting device having vertical structure and package thereof
A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.
1. A light emitting device package comprising:
a sub-mount having a first surface and a second surface;
a first metal layer on the first surface of the sub-mount;
a second metal layer on the second surface of the sub-mount; and
a light emitting device on the first surface comprising:
a supporting layer including an anti-diffusion layer;
a first electrode on the supporting layer;
a semiconductor light emitting structure electrically connected to the first electrode; and
a second electrode electrically connected to the semiconductor light emitting structure,
wherein the first electrode is electrically connected to the first metal layer and the second electrode is electrically connected to the second metal layer,
wherein the semiconductor light emitting structure comprises a light extraction structure,
wherein one of the first metal layer and the second metal layer directly contacts the sub-mount,
wherein the sub-mount has a cavity, the cavity having a bottom portion and an inclined portion, and
wherein the first metal layer has an inclined surface, and the inclined surface of the first metal layer is on the inclined portion of the cavity.
2. The light emitting device package of claim 1 , further comprising a lens on the sub-mount, wherein the lens is on the light emitting device.
3. The light emitting device package of claim 1 , wherein the semiconductor light emitting structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer.
4. The light emitting device package of claim 1 , wherein a horizontal cross-sectional area adjacent to an upper surface of the semiconductor light emitting structure is different from a horizontal cross-sectional area adjacent to a lower surface of the semiconductor light emitting structure.
5. The light emitting device package of claim 1 , wherein the first electrode is between the first conductive type semiconductor layer and the supporting layer, and the second electrode is over the second conductive type semiconductor layer.
6. The light emitting device package according to claim 1 , wherein a height of the first surface is different than a height of the second surface.
7. The light emitting device package according to claim 1 , wherein the supporting layer comprises a metal.
8. The light emitting device package according to claim 1 , further comprising an adhesion layer between the semiconductor light emitting structure and the supporting layer.
9. The light emitting device package according to claim 8 , wherein the adhesion layer has a multilayer structure.
10. The light emitting device package according to claim 1 , wherein the light extraction structure comprises one of an irregularity pattern, a photonic crystal, and a plurality of nano particles.
11. The light emitting device package according to claim 1 , wherein the light extraction structure is an integral part of the semiconductor light emitting structure.
12. The light emitting device package according to claim 1 , wherein the light extraction structure is at a light emission surface of the semiconductor light emitting structure.
13. The light emitting device package according to claim 1 , further comprising a passivation layer on the semiconductor light emitting structure.
14. The light emitting device package according to claim 1 , wherein the first electrode comprises one of two metals and a multilayer structure of at least two metal layers alternately arranged.
15. The light emitting device package according to claim 1 , wherein the first electrode comprises an ohmic contact layer and a reflection electrode.
16. The light emitting device package according to claim 1 , wherein the sub-mount comprises one of Si, AlN, ceramic, AlOx, Al 2 O 3 , BeO, and a printed circuit board (PCB) substrate.
17. A light emitting device package comprising:
a sub-mount having a first surface and a second surface;
a first metal layer on the first surface of the sub-mount;
a second metal layer on the second surface;
a light emitting device on the first surface comprising:
a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer,
a semiconductor light emitting structure electrically connected to the first electrode, and
a second electrode electrically connected to the semiconductor light emitting structure,
wherein the first electrode is electrically connected to the first metal layer and the second electrode is electrically connected to the second metal layer,
wherein the semiconductor light emitting structure comprises a light extraction structure, and
a zener diode on the second surface such that the zener diode is electrically connected to the first-type electrode and the second-type electrode, wherein the zener diode is a distance apart from the light emitting device,
wherein one of the first metal layer and the second metal layer directly contacts the sub-mount,
wherein the sub-mount has a cavity having a bottom portion and an inclined portion, and
wherein the first metal layer has an inclined surface, and the inclined surface is on the inclined portion of the cavity.
18. The light emitting device package according to claim 17 , wherein the zener diode is at a corner region of the second surface of the sub-mount.
19. A light emitting device package comprising:
a sub-mount having a first surface and a second surface;
a first metal layer on the first surface of the sub-mount;
a second metal layer on the second surface;
a light emitting device on the first surface comprising:
a supporting layer including a first electrode on the supporting layer;
a semiconductor light emitting structure electrically connected to the first electrode; and
a second electrode electrically connected to the semiconductor light emitting structure,
wherein the first electrode is electrically connected to the first metal layer and the second electrode is electrically connected to the second metal layer, and
a zener diode on the second surface such that the zener diode is electrically connected to the first-type electrode and the second-type electrode, wherein the zener diode is a distance apart from the light emitting device,
wherein one of the first metal layer and the second metal layer directly contacts the sub-mount,
wherein the sub-mount has a cavity having a bottom portion and an inclined portion, and
wherein the first metal layer has an inclined surface, and the inclined surface is on the inclined portion of the cavity.
20. The light emitting device package according to claim 19 , wherein the first electrode comprises an ohmic contact layer and a reflection electrode.