Methods and devices for fabricating and assembling printable semiconductor elements
The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.
1. A method for transferring a printable semiconductor element onto a receiving surface of a non-native substrate, said method comprising:
providing a transfer device with said printable semiconductor element removably attached thereto, wherein said transfer device comprises a three-dimensional feature in at least partial contact with said printable semiconductor element;
contacting said printable semiconductor element removably attached to said transfer device with said receiving surface of said non-native substrate; and
following said contacting of said printable semiconductor element with said receiving surface, separating said transfer device from said printable semiconductor element, wherein said printable semiconductor element is transferred onto said receiving surface, wherein said non-native substrate is non-native to said printable semiconductor element.
2. The method of claim 1 , wherein said printable semiconductor element removably attached to said transfer device is contacted with a selected region of said receiving surface with a placement accuracy greater than or equal to 25 microns.
3. The method of claim 1 , wherein said receiving surface comprises an adhesive layer, wherein said printable semiconductor element is contacted with said adhesive layer during transfer of said printable semiconductor element to said receiving surface of said non-native substrate.
4. The method of claim 1 , wherein said transfer device comprises an elastomer stamp.
5. The method of claim 1 , wherein a contact surface of said three-dimensional feature of said transfer device comprises an adhesive material on said three-dimensional feature.
6. The method of claim 1 , wherein said printable semiconductor element is a light emitting diode.
7. The method of claim 1 , wherein said printable semiconductor element is a transistor.
8. The method of claim 1 , wherein said printable semiconductor element is a photodiode.
9. The method of claim 1 , wherein said printable semiconductor element is a laser.
10. The method of claim 1 , wherein said printable semiconductor element is a P-N junction.
11. The method of claim 1 , wherein said printable semiconductor element is a logic circuit.
12. The method of claim 1 , wherein said printable semiconductor element is a nanoelectromechanical device.
13. The method of claim 1 , wherein said printable semiconductor element is a microelectromechanical device.
14. The method of claim 1 , wherein said printable semiconductor element comprises a surface coated with a release layer that facilitates bonding of said printable semiconductor element to a contact surface of said transfer device.
15. The method of claim 14 , wherein said release layer comprises a photoresist.
16. The method of claim 1 , wherein said non-native substrate comprises a member selected from the group consisting of: plastic, ceramic, dielectric material, conductive material, metal, semiconductor material, polymer material, thermoplastic material, thermoset material, reinforced polymer material, and composite polymer material.
17. The method of claim 1 , wherein said contacting of said printable semiconductor element removably attached to said transfer device with said receiving surface of said non-native substrate is performed at a temperature of less than 400 degrees C.
18. The method of claim 1 , wherein said printable semiconductor element has a thickness from 10 nm to 100 microns.
19. The method of claim 18 , wherein said printable semiconductor element has a width from 100 nm to 1 millimeter.
20. The method of claim 18 , wherein said printable semiconductor element has a length from 1 micron to 1 millimeter.
21. A method for transferring a plurality of printable semiconductor elements onto a receiving surface of a non-native substrate, said method comprising:
providing a transfer device with said plurality of printable semiconductor elements removably attached thereto, wherein said transfer device comprises a plurality of three-dimensional features, each of said plurality of three-dimensional features in at least partial contact with a corresponding semiconductor element of said plurality of printable semiconductor elements;
contacting said plurality of printable semiconductor elements removably attached to said transfer device with said receiving surface of said non-native substrate; and
following said contacting of said plurality of printable semiconductor elements with said receiving surface, separating said transfer device from said plurality of printable semiconductor elements, wherein said plurality of printable semiconductor elements are transferred onto said receiving surface, wherein said non-native substrate is non-native to said printable semiconductor element.
22. The method of claim 21 , wherein each printable semiconductor element of said plurality of printable semiconductor elements removably attached to said transfer device is contacted with a selected region of said receiving surface with a placement accuracy greater than or equal to 25 microns.
23. The method of claim 21 , wherein said receiving surface comprises an adhesive layer, wherein said plurality of printable semiconductor elements are contacted with said adhesive layer during transfer of said plurality of printable semiconductor elements to said receiving surface of the non-native substrate.
24. The method of claim 21 , wherein said transfer device comprises an elastomer stamp.
25. The method of claim 21 , wherein a contact surface of each three-dimensional feature of said plurality of three-dimensional features of said transfer device comprises an adhesive material on said respective three-dimensional feature.
26. The method of claim 21 , wherein said plurality of printable semiconductor elements is a plurality of light emitting diodes.
27. The method of claim 21 , wherein said plurality of printable semiconductor elements is a plurality of transistors.
28. The method of claim 21 , wherein said plurality of printable semiconductor elements is a plurality of photodiodes.
29. The method of claim 21 , wherein said plurality of printable semiconductor elements is a plurality of lasers.
30. The method of claim 21 , wherein said plurality of printable semiconductor elements is a plurality of P-N junctions.
31. The method of claim 21 , wherein said plurality of printable semiconductor elements is a plurality of logic circuits.
32. The method of claim 21 , wherein said plurality of printable semiconductor elements is a plurality of nanoelectromechanical devices.
33. The method of claim 21 , wherein said plurality of printable semiconductor elements is a plurality of microelectromechanical devices.
34. The method of claim 21 , wherein said plurality of printable semiconductor elements comprises a surface coated with a release layer that facilitates bonding of said plurality of printable semiconductor elements to a contact surface of said transfer device.
35. The method of claim 34 , wherein said release layer comprises a photoresist.
36. The method of claim 21 , wherein said non-native substrate comprises a member selected from the group consisting of: plastic, ceramic, dielectric material, conductive material, metal, semiconductor material, polymer material, thermoplastic material, thermoset material, reinforced polymer material, and composite polymer material.
37. The method of claim 21 , wherein said contacting of said plurality of printable semiconductor elements removably attached to said transfer device with said receiving surface of said non-native substrate is performed at a temperature of less than 400 degrees C.
38. The method of claim 21 , wherein each printable semiconductor element of said plurality of printable semiconductor elements has a thickness from 10 nm to 100 microns.
39. The method of claim 38 , wherein each printable semiconductor element of said plurality of printable semiconductor elements has a width from 100 nm to 1 millimeter.
40. The method of claim 39 , wherein each printable semiconductor element of said plurality of printable semiconductor elements has a length from 1 micron to 1 millimeter.
41. The method of claim 21 , wherein said plurality of printable semiconductor elements is an array of printable semiconductor elements.