ESD centric low-cost IO layout design topology
View Patent ↗An integrated circuit may include a plurality of input/output (I/O) cells used for communicating signals, power, and ground to and from a core of the integrated circuit. The I/O cells may each include a bond pad formed in one or more top metal layers. One or more of the bond pads may be offset a predetermined distance from an I/O cell edge corresponding to a chip edge of the integrated circuit. A volume may be determined by the I/O cell edge and the predetermined distance and one or more rails may be disposed in the volume and in at least one metal layer common with at least one metal layer of the bond pad. The rails may be involved in the discharge of electrostatic discharge (ESD) current, and may reduce path resistance of the path used to discharge the ESD current.
1. An integrated circuit comprising:
an input/output (I/O) cell comprising:
a plurality of metal layers separated by a plurality of dielectric layers;
an I/O cell edge defining a boundary of the I/O cell;
a bond pad offset from the I/O cell edge by a predetermined distance;
a volume defined by the I/O cell edge and the predetermined distance that the bond pad is offset from the I/O cell edge; and
a rail disposed in the volume and in a same metal layer of the plurality of metal layers as the bond pad.
2. The integrated circuit of claim 1 , further comprising an electrostatic discharge (ESD) diode disposed in the volume.
3. The integrated circuit of claim 2 , wherein the rail comprises a first rail, and wherein the I/O cell comprises a second rail disposed in the volume and disposed in a different metal layer than the first rail, the different metal layer being in between the ESD diode and the first rail.
4. The integrated circuit of claim 1 , wherein the bond pad comprises a bond pad edge corresponding to the I/O cell edge, and wherein the predetermined distance is a distance from the I/O cell edge to the bond pad edge.
5. The integrated circuit of claim 1 , wherein the predetermined distance is in a range from 1 micrometer to 18 micrometers.
6. The integrated circuit of claim 1 , wherein the rail comprises a first rail, and wherein the I/O cell comprises a second rail disposed in the volume and also in the same metal layer as the bond pad.
7. The integrated circuit of claim 6 , wherein the first rail comprises a power rail and the second rail comprises a ground rail.
8. An integrated circuit comprising:
a plurality of metal layers separated by a plurality of dielectric layers;
a first bond pad;
a second bond pad offset from an input/output (I/O) cell edge by a predetermined distance;
an electrostatic discharge (ESD) path extending from the first bond pad to the second bond pad;
a volume defined by the I/O cell edge and the predetermined distance; and
a rail disposed in the volume and forming part of the ESD path, the rail being disposed in a same metal layer of the plurality of metal layers as the second bond pad.
9. The integrated circuit of claim 8 , further comprising an electrostatic discharge (ESD) diode disposed in the volume.
10. The integrated circuit of claim 8 , wherein the rail comprises a first rail, and wherein the I/O cell comprises a second rail disposed in the volume and in between the ESD diode and the first rail.
11. The integrated circuit of claim 8 , wherein the rail comprises a first rail, and wherein the I/O cell comprises a second rail disposed in the volume and also in the same metal layer as the second bond pad.
12. The integrated circuit of claim 8 , wherein the second bond pad comprises a bond pad edge corresponding to the I/O cell edge, and wherein the predetermined distance is a distance from the I/O cell edge to the bond pad edge.
13. The integrated circuit of claim 8 , wherein the predetermined distance is in a range from 1 micrometer to 18 micrometers.
14. An integrated circuit comprising:
a plurality of metal layers separated by a plurality of dielectric layers;
an input/output (I/O) cell comprising:
a bond pad;
a volume vertically extending a height of the I/O cell, wherein the volume comprises:
electrostatic discharge (ESD) circuitry but not functional circuitry of the I/O cell; and
a rail disposed in a same metal layer of the plurality of metal layers as the bond pad.
15. The integrated circuit of claim 14 , wherein the ESD circuitry comprises an ESD diode disposed in the volume.
16. The integrated circuit of claim 15 , wherein the rail comprises a first rail, and wherein the I/O cell comprises a second rail disposed in the volume and vertically disposed in between the ESD diode and the first rail.
17. The integrated circuit of claim 14 , wherein the rail comprises a first rail, and wherein the I/O cell comprises a second rail disposed in the volume in the same metal layer as the first rail.
18. The integrated circuit of claim 14 , wherein the bond pad comprises a bond pad edge corresponding to the I/O cell edge, and wherein the predetermined distance is a distance from the I/O cell edge to the bond pad edge.