Silicon-on-insulator device and intermetallic dielectric layer structure thereof and manufacturing method
Provided is an intermetallic dielectric layer structure of a silicon-on-insulator device, comprising a silicon-rich oxide layer ( 54 ) covering a metal interconnect, a fluorine-silicon glass layer on the silicon-rich oxide layer, and a non-doped silicate glass layer on the fluorine-silicon glass layer; the thickness of the silicon-rich oxide layer ( 54 ) is 700 angstroms ±10%; the silicon-rich oxide layer having a greater thickness captures movable ions on an unsaturated bond, such that it is difficult for the movable ions to pass through the silicon-rich oxide layer, thus blocking the movable ions. The present invention has good performance in an integrity evaluation of the gate oxide layer, and avoids damage to the device caused by the aggregation of movable ions at an interface. Also provided are a silicon-on-insulator device and a method of manufacturing the intermetallic dielectric layer of the silicon-on-insulator device.
1. A silicon-on-insulator device, comprising a substrate, a buried oxide layer formed on the substrate, a well region formed on the buried oxide layer, a source structure and a drain structure formed in the well region, a gate and an interlayer dielectric layer formed on the well region, a first intermetallic dielectric layer formed on the interlayer dielectric layer, and a pad layer formed on a surface of the device, wherein a structure of the first intermetallic dielectric layer is an intermetallic dielectric layer structure comprising: a Si-rich oxide layer covering a metal interconnection, a fluorine-silicon glass layer formed on the Si-rich oxide layer, and an undoped silicate glass layer formed on the fluorine-silicon glass layer; wherein a thickness of the Si-rich oxide layer is 700 angstroms ±10% so as to capture and bind mobile ions to unsaturated bonds, such that it is difficult for the mobile ions to pass through the Si-rich oxide layer, which provides a good performance in evaluation of gate oxide integrity (GOI); wherein a thickness of the undoped silicate glass layer is 2000 angstroms ±10%, and wherein a thickness of the fluorine-silicon glass is 6500 angstroms.
2. The silicon-on-insulator device of claim 1 , characterized in that, the interlayer dielectric layer comprises a silicon oxide layer.
3. The silicon-on-insulator device of claim 1 , characterized in that, the Si-rich oxide layer is an in-situ Si-rich oxide layer.
4. The silicon-on-insulator device of claim 1 , further comprising a silicon nitride layer provided between the metal interconnection and the fluorine-silicon glass layer.