Electronic device with asymmetric gate strain
The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The gate electrode strain can be obtained through non symmetric placement of stress inducing structures as part of the gate electrode.
1. A method of forming a transistor, comprising:
forming a gate electrode over a gate dielectric on a substrate; and
forming sidewall spacers on first and second sides of the gate electrode; and
wherein at least one of the gate electrode and the spacers on the first and second sides are constructed to induce an asymmetrical strain into the transistor between a first region proximate the first side of the gate electrode and a second region proximate the second side of the gate electrode;
wherein the asymmetrical strain is caused, at least in part, by forming the gate electrode having a different thickness on the first side than on the second side, including removing a portion of the gate electrode to form an electrode with a different height on the first side than on the second side.
2. The method of claim 1 , further comprising replacing the removed portion of the gate electrode with a material different from the gate electrode material.
3. The method of forming a transistor of claim 1 , wherein the asymmetrical strain is formed, at least in part, by a difference between at least one spacer on the first side of the gate electrode and a spacer on the second side of the gate electrode.
4. The method of forming a transistor of claim 3 , wherein the at least one spacer on the first side of the gate electrode is formed of a different material than the spacer on the second side of the gate electrode.
5. The method of forming a transistor of claim 3 , wherein there are multiple spacers on the first side of the gate electrode, and wherein there is a single spacer on the second side of the gate electrode.
6. A method of forming a transistor, the method comprising:
forming a gate electrode over a gate dielectric on a substrate; and
forming sidewall spacers on first and second sides of the gate electrode; and
wherein at least one of the gate electrode and the spacers on the first and second sides are constructed to induce an asymmetrical strain into the transistor between a first region proximate the first side of the gate electrode and a second region proximate the second side of the gate electrode;
wherein forming dielectric spacers on first and second sides of the gate electrode includes,
forming both a first dielectric spacer and an additional dielectric spacer on the first side of the gate electrode and forming a second dielectric spacer on the second side of the gate electrode,
removing the first dielectric spacer before forming the additional spacer, such that the additional spacer is formed on the first side of the gate electrode in place of the first dielectric spacer, and
wherein removing the first dielectric spacer includes,
covering the second dielectric spacer with a protective layer,
ion implanting the first conductive spacer, and
removing the ion implanted first conductive spacer.
7. The method of claim 6 , wherein the first and second dielectric spacers each include silicon dioxide, and the additional dielectric spacer includes silicon nitride.
8. The method of claim 7 , wherein the first and second dielectric spacers are formed by chemical vapor deposition.
9. The method of claim 6 , wherein the removed first dielectric spacer is replaced with a silicon nitride material that also covers an outer surface of the second dielectric spacer.
10. A method of forming a transistor, the method comprising:
forming a gate electrode over a gate dielectric on a substrate; and
forming sidewall spacers on first and second sides of the gate electrode; and
wherein at least one of the gate electrode and the spacers on the first and second sides are constructed to induce an asymmetrical strain into the transistor between a first region proximate the first side of the gate electrode and a second region proximate the second side of the gate electrode;
wherein the asymmetrical strain is formed, at least in part, by a difference between at least one spacer on the first side of the gate electrode and a spacer on the second side of the gate electrode,
wherein a spacer on one side of the gate electrode is implanted with ions, and a spacer on the opposite side of the gate electrode is not implanted with ions.
11. The method of forming a transistor of claim 10 , wherein the asymmetrical strain is caused, at least in part, by forming the gate electrode having a different thickness on the first side than on the second side.