Method for fabricating semiconductor package having a multi-layer encapsulated conductive substrate and structure
In one embodiment, a semiconductor package includes a multi-layer encapsulated conductive substrate having a fine pitch. The multi-layer encapsulated conductive substrate includes a conductive leads spaced apart from each other, a first encapsulant disposed between the leads, a first conductive layer electrically connected to the plurality of leads, conductive pillars disposed on the first conductive layer, a second encapsulant encapsulating the first conductive layer and the conductive pillars, and a second conductive layer electrically connected to the conductive pillars and exposed in the second encapsulant. A semiconductor die is electrically connected to the second patterned conductive layer. A third encapsulant covers at least the semiconductor die.
1. A semiconductor package comprising:
a multi-layer encapsulated conductive substrate comprising:
an encapsulated conductive structure consisting of:
a plurality of leads spaced apart from each other; and
a first encapsulant disposed between the plurality of leads;
a first conductive layer electrically connected to the plurality of leads;
conductive pillars disposed on the first conductive layer;
a second encapsulant encapsulating the first conductive layer and the conductive pillars; and
a second conductive layer electrically connected to the conductive pillars and disposed adjacent the second encapsulant;
a semiconductor die electrically coupled to the second conductive layer; and
a third encapsulant encapsulating at least the semiconductor die, wherein:
each of the plurality of leads comprises a top surface adjacent the first conductive layer and a bottom surface exposed outside of the first encapsulant;
the first conductive layer laterally overlaps onto a portion of the first encapsulant and physically contacts the first encapsulant; and
the top surfaces and the bottom surfaces of the plurality of leads are devoid of the first encapsulant.
2. The semiconductor package of claim 1 , wherein:
a bottom surface of the first encapsulant protrudes to a bottom portion of the multi-layer encapsulated conductive substrate more than the bottom surfaces of the plurality of leads; and
the third encapsulant physically contacts the second encapsulant.
3. The semiconductor package of claim 2 further comprising:
solder structures attached to the bottom surfaces of the plurality of leads.
4. The semiconductor package of claim 1 , wherein bottom surfaces of the plurality of leads protrude to a bottom portion of the multi-layer encapsulated conductive substrate more than a bottom surface of the first encapsulant.
5. The semiconductor package of claim 1 further comprising:
conductive posts disposed on the second conductive layer; and
a fourth encapsulant encapsulating the second conductive layer and the conductive posts, wherein:
the conductive posts are exposed in the fourth encapsulant;
the semiconductor die is electrically coupled to the conductive posts; and
the third encapsulant physically contacts the fourth encapsulant.
6. The semiconductor package of claim 5 , wherein:
conductive bumps are formed under the semiconductor die; and
the conductive bumps are electrically connected to the conductive posts.
7. The semiconductor package of claim 1 , wherein:
at least one conductive pillar is disposed on the first conductive layer where the first conductive layer overlaps the first encapsulant;
the at least one conductive pillar is laterally offset from a respective one of the plurality of leads electrically coupled to the at least one conductive pillar;
the first encapsulant comprises a first mold compound; and
the second encapsulant comprises a second mold compound.
8. The semiconductor package of claim 5 , wherein the semiconductor die comprises:
a first major surface;
a second major surface opposed to the first major surface; and
a pair of sidewall surfaces extending from the first major surface to the second major surface in a cross-sectional view, wherein:
all of the conductive posts are disposed laterally inward from the pair of sidewall surfaces in the cross-sectional view.
9. The semiconductor package of claim 1 , wherein:
the first conductive layer comprises a first patterned layer that contacts the first encapsulant; and
the second conductive layer comprises a second patterned layer that contacts the second encapsulant.
10. A semiconductor package comprising:
a multi-layer encapsulated conductive substrate comprising:
an encapsulated conductive structure consisting of:
a plurality of leads spaced apart from each other; and
a first encapsulant formed between the plurality of leads, wherein each of the plurality of leads comprises a top surface and a bottom surface exposed outside of the first encapsulant, and wherein the top surface and the bottom surface of each of the plurality of leads are devoid of the first encapsulant;
a first conductive layer electrically connected to the plurality of leads, laterally extending to overlap a top surface portion of the first encapsulant and physically contacting the first encapsulant;
conductive pillars formed on the first conductive layer;
a second encapsulant encapsulating the first conductive layer and the conductive pillars, wherein top surfaces of the conductive pillars are exposed in the second encapsulant; and
a second conductive layer electrically connected to the conductive pillars, laterally extending to overlap a top surface portion of the second encapsulant, and physically contacting the second encapsulant;
a semiconductor die electrically coupled to the second conductive layer; and
a third encapsulant encapsulating at least the semiconductor die, wherein:
the third encapsulant physically contacts the second encapsulant.
11. The semiconductor package of claim 10 , wherein:
a bottom surface of the first encapsulant protrudes to a bottom portion of the multi-layer encapsulated conductive substrate more than the bottom surfaces of the plurality of leads.
12. The semiconductor package of claim 10 , further comprising:
conductive posts formed on the second conductive layer; and
a fourth encapsulant encapsulating the second conductive layer and the conductive posts.
13. The semiconductor package of claim 12 , wherein a plurality of bump pads are formed under the semiconductor die and the plurality of bump pads are electrically connected to the conductive posts.
14. The semiconductor package of claim 12 , wherein the semiconductor die comprises:
a first major surface;
a second major surface opposed to the first major surface; and
a pair of sidewall surfaces extending from the first major surface to the second major surface in a cross-sectional view, wherein:
each of the conductive posts is disposed laterally inward from the pair of sidewall surfaces in the cross-sectional view.
15. A semiconductor package comprising:
a multi-layer encapsulated conductive substrate comprising:
an encapsulated conductive structure consisting of:
conductive leads spaced apart from each other; and
a first encapsulant disposed between the conductive leads;
a first conductive layer electrically connected to the conductive leads laterally extending to overlap a top surface portion of the first encapsulant and physically contacting the first encapsulant;
conductive pillars disposed on the first conductive layer;
a second encapsulant encapsulating the first conductive layer and the conductive pillars, wherein top surfaces of the conductive pillars are exposed to the outside of the second encapsulant; and
a second conductive layer electrically connected to the conductive pillars and laterally extending to overlap a top surface portion of the second encapsulant and physically contacting the second encapsulant;
a semiconductor die electrically coupled to the second conductive layer; and
a third encapsulant covering at the least the semiconductor die, wherein:
bottom surfaces of the conductive leads are exposed in a bottom surface of the first encapsulant; and
top surfaces of the conductive leads and the bottom surfaces of the conductive leads are devoid of the first encapsulant.
16. The semiconductor package of claim 15 , wherein:
the third encapsulant physically contacts the second encapsulant;
the first conductive layer comprises a first patterned layer; and
the second conductive layer comprises a second patterned layer.
17. The semiconductor package of claim 16 , wherein:
at least one conductive pillar is positioned directly overlying a top surface the first encapsulant; and
the bottom surfaces of the conductive leads are recessed to allow the first encapsulant to downwardly protrude relative to the conductive leads.
18. The semiconductor package of claim 17 further comprising solder structures attached to the bottom surfaces of the conductive leads.
19. The semiconductor package of claim 16 further comprising:
conductive posts disposed on first portions of the second patterned layer; and
a fourth encapsulant encapsulating the conductive posts, wherein:
second portions of the second patterned layer are provided absent a conductive post;
the conductive posts are exposed to the outside of the fourth encapsulant; and
the semiconductor die is electrically coupled to the conductive posts.
20. The semiconductor package of claim 19 , wherein:
the semiconductor die comprises:
a first major surface;
a second major surface opposed to the first major surface; and
a pair of sidewall surfaces extending from the first major surface to the second major surface in a cross-sectional view;
each of the conductive posts is disposed laterally inward from the pair of sidewall surfaces in the cross-sectional view; and
the semiconductor die is attached to the conductive posts with conductive bumps.