Semiconductor structures having low resistance paths throughout a wafer
A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.
1. A structure, comprising:
low resistance conduction paths comprising a plurality of metal vias located in a dielectric material, extending to an underlying substrate of a wafer, and within dicing channels of the wafer;
an upper dielectric material on the dielectric material, the upper dielectric material having an opening patterned therein directly above the plurality of metal vias;
a barrier layer in direct contact with the low resistance conductive paths and extending over a top surface of the upper dielectric material;
an electroplated seed layer in direct contact with the barrier layer and extending over a top surface of the upper dielectric material; and
a silicide layer at a junction between the dielectric material and the underlying substrate which is in direct contact with the plurality of metal vias.
2. The structure of claim 1 , wherein the plurality of metal vias are lined with an oxide material layer, an adhesion layer and a copper layer.
3. The structure of claim 2 , wherein the adhesion layer is one of Tantalum (Ta) or Titanium (Ti).
4. The structure of claim 1 , further comprising an active device in the dielectric material and positioned on the silicide layer.
5. The structure of claim 4 , wherein the upper dielectric material includes another opening patterned therein directly above the active device.
6. The structure of claim 5 , wherein the barrier layer and the electroplated seed layer extend into the other opening.
7. A structure, comprising:
at least one low resistance conduction path in an interlevel dielectric material, extending to an underlying substrate of a wafer, and within dicing channels of the wafer;
an upper dielectric material on the interlevel dielectric material, the upper dielectric material including an opening patterned therein directly above the at least one low resistance conduction path;
a barrier layer in direct contact with the at least one low resistance conductive path and extending over a top surface of the upper dielectric material;
an electroplated seed layer in direct contact with the barrier layer and extending over a top surface of the upper dielectric material; and
a silicide layer at a junction between the interlevel dielectric material and the underlying substrate.
8. The structure of claim 7 , wherein the at least one lower resistance conduction path is lined with an oxide material layer, an adhesion layer and a copper layer.
9. The structure of claim 8 , wherein the adhesion layer is one of Tantalum (Ta) or Titanium (Ti).
10. The structure of claim 7 , further comprising an active device in the dielectric material and positioned on the silicide layer adjacent the at least one low resistance conduction path.
11. The structure of claim 7 , wherein the barrier layer and the electroplated seed layer extend above the active device.
12. A structure, comprising:
at least one low resistance conduction path in an interlevel dielectric material, extending to an underlying substrate of a wafer, and within dicing channels of the wafer;
an upper dielectric material on the interlevel dielectric material, the upper dielectric material including an opening patterned therein directly above the at least one low resistance conduction path;
a barrier layer in direct contact with the at least one low resistance conductive path;
an electroplated seed layer in direct contact with the barrier layer;
a silicide layer at a junction between the interlevel dielectric material and the underlying substrate; and
an active device in the dielectric material and positioned on the silicide layer adjacent the at least one low resistance conduction path, wherein the upper dielectric material includes another opening patterned therein directly above the active device, and the barrier layer and electroplated seed layer are formed within the opening and the other opening in the upper dielectric material.
13. The structure of claim 12 , wherein the at least one low resistance conduction path is lined with an oxide material layer, and adhesion layer and a copper layer.
14. The structure of claim 13 , wherein the adhesion layer is one of Tantalum (Ta) or Titanium (Ti).