Replacement metal gate dielectric cap
A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method may further include forming a patterned dielectric layer on a bulk dielectric material and a gate dielectric barrier in one or more deposition steps. The method may include removing the molecular mask and exposing part of the gate dielectric barrier before depositing a dielectric cap that touches the gate dielectric barrier and the replacement metal gate.
1. A method of manufacturing a field effect transistor, comprising:
chelating a molecular mask to a replacement metal gate in the field effect transistor;
forming, using the molecular mask to protect the replacement metal gate, a patterned dielectric layer on a bulk dielectric and gate dielectric barrier;
exposing a region of the gate dielectric barrier;
depositing a dielectric cap to touch the gate dielectric barrier and the replacement metal gate; and
creating a contact opening to expose a semiconducting substrate next to the field effect transistor.
2. The method of claim 1 where the gate dielectric barrier is selected from a group consisting of a gate oxide and a spacer.
3. The method of claim 1 , further comprising:
planarizing the dielectric cap to expose the patterned dielectric layer.