Semiconductor device including transistor having low parasitic capacitance
A minute transistor is provided. A transistor with small parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor and a second insulator embedded in a first insulator, a second conductor and a third conductor. Edges of the second conductor and the third conductor facing each other each has a taper angle of 30 degree or more and 90 degree or less.
1. A semiconductor device comprising:
an oxide semiconductor;
a first conductor;
a second conductor;
a third conductor;
a first insulator;
a second insulator; and
a third insulator,
wherein the oxide semiconductor includes a region overlapping with the second conductor and a region overlapping with the third conductor,
wherein the first conductor includes a region overlapping with the oxide semiconductor with the first insulator positioned therebetween,
wherein the second insulator includes an opening,
wherein the first insulator is in contact with a side surface of the second insulator in the opening,
wherein the third insulator is positioned between the first conductor and the first insulator,
wherein the first insulator and the third insulator comprise different materials from each other,
wherein the first conductor includes a region facing the side surface of the second insulator with the first insulator positioned therebetween,
wherein a first region of a surface of the second conductor is in contact with the first insulator,
wherein a second region of a surface of the third conductor is in contact with the first insulator,
wherein in a cross section perpendicular to a bottom surface of the second conductor in a channel width direction, the first region has an angle of 30° or more and 60° or less to the bottom surface of the second conductor,
wherein in a cross section perpendicular to a bottom surface of the third conductor in a channel width direction, the second region has an angle of 30° or more and 60° or less to the bottom surface of the third conductor,
wherein in the cross section perpendicular to the bottom surface of the second conductor in the channel width direction, the second insulator does not overlap the first region, and
wherein in the cross section perpendicular to the bottom surface of the third conductor in the channel width direction, the second insulator does not overlap the second region.
2. The semiconductor device according to claim 1 ,
wherein the second conductor has a fourth conductor which is in contact with the second insulator, and a sixth conductor which is not in contact with the second insulator, and
wherein the fourth conductor has higher performance of suppressing penetration of oxygen than the sixth conductor.
3. The semiconductor device according to claim 1 , further comprising a fourth insulator,
wherein the fourth insulator includes a region overlapping with the oxide semiconductor and contains at least one of main components elements of the oxide semiconductor other than oxygen.
4. The semiconductor device according to claim 1 ,
wherein the first conductor has a region functioning as a gate electrode of a transistor, and
wherein the transistor has a gate line width of greater than or equal to 3 nm and less than or equal to 60 nm.
5. The semiconductor device according to claim 1 , further comprising a region where a distance between edges of the second conductor and the third conductor facing each other is greater than or equal to 5 nm and less than or equal to 80 nm.
6. The semiconductor device according to claim 1 , wherein a width of the opening in the second insulator is 15 nm or more and 60 nm or less.
7. The semiconductor device according to claim 1 ,
wherein the first conductor is a gate electrode, and
wherein the first conductor is in the opening.
8. A semiconductor device comprising:
an oxide semiconductor;
a first conductor;
a second conductor;
a third conductor;
a first insulator;
a second insulator; and
a third insulator,
wherein the oxide semiconductor includes a region overlapping with the second conductor and a region overlapping with the third conductor,
wherein the first conductor includes a region overlapping with the oxide semiconductor with the first insulator positioned therebetween,
wherein the second insulator includes an opening,
wherein the first insulator is in contact with a side surface of the second insulator in the opening,
wherein the third insulator is positioned between the first conductor and the first insulator,
wherein the first insulator and the third insulator comprise different materials from each other,
wherein the first conductor includes a region facing the side surface of the second insulator with the first insulator positioned therebetween,
wherein a first region of a surface of the second conductor is in contact with the first insulator,
wherein a second region of a surface of the third conductor is in contact with the first insulator,
wherein in a cross section perpendicular to a bottom surface of the second conductor in a channel width direction, an angle between the side surface of the second insulator in the opening and a bottom surface of the second conductor is greater than an angle between the first region of the surface of the second conductor and the bottom surface of the second conductor,
wherein the first conductor is a gate electrode, and
wherein the first conductor is in the opening.
9. The semiconductor device according to claim 8 ,
wherein the second conductor has a fourth conductor which is in contact with the second insulator, and a sixth conductor which is not in contact with the second insulator, and
wherein the fourth conductor has higher performance of suppressing penetration of oxygen than the sixth conductor.
10. The semiconductor device according to claim 8 , further comprising a fourth insulator,
wherein the fourth insulator includes a region overlapping with the oxide semiconductor and contains at least one of main components elements of the oxide semiconductor other than oxygen.
11. The semiconductor device according to claim 8 , wherein the first conductor has a region functioning as the gate electrode of a transistor, and
wherein the transistor has a gate line width of greater than or equal to 3 nm and less than or equal to 60 nm.
12. The semiconductor device according to claim 8 , further comprising a region where a distance between edges of the second conductor and the third conductor facing each other is greater than or equal to 5 nm and less than or equal to 80 nm.
13. The semiconductor device according to claim 8 , wherein a width of the opening in the second insulator is 15 nm or more and 60 nm or less.
14. The semiconductor device according to claim 8 ,
wherein in the cross section perpendicular to the bottom surface of the second conductor in the channel width direction, the second insulator does not overlap the first region.
15. A semiconductor device comprising:
a first oxide;
a first conductor;
a second conductor;
a third conductor;
a second oxide;
a first insulator; and
a second insulator,
wherein the first oxide includes region overlapping with the second conductor and a region overlapping with the third conductor,
wherein the first conductor includes a region overlapping with the first oxide with the second oxide positioned therebetween,
wherein the first insulator includes an opening,
wherein the second oxide is in contact with a side surface of the first insulator in the opening,
wherein the second insulator is positioned between the first conductor and the second oxide,
wherein the second oxide and the second insulator comprise different materials from each other,
wherein the first conductor includes a region facing the side surface of the first insulator with the second oxide positioned therebetween,
wherein a first region of a surface of the second conductor is in contact with the second oxide,
wherein a second region of a surface of the third conductor is in contact with the second oxide,
wherein in a cross section perpendicular to a bottom surface of the second conductor in a channel width direction, an angle between the side surface of the first insulator in the opening and the bottom surface of the second conductor is greater than an angle between the first region of the surface of the second conductor and the bottom surface of the second conductor,
wherein the first conductor is a gate electrode, and
wherein the first conductor is in the opening.
16. The semiconductor device according to claim 15 ,
wherein the first oxide comprises indium and en element M (an element M is aluminum, gallium, yttrium, or tin), and
wherein the second oxide comprises at least one of main components of the first oxide other than oxygen.
17. The semiconductor device according to claim 15 ,
wherein the second conductor has a fourth conductor which is in contact with the first insulator, and a sixth conductor which is not in contact with the first insulator, and
wherein the fourth conductor has higher performance of suppressing penetration of oxygen than the sixth conductor.
18. The semiconductor device according to claim 15 , further comprising a third insulator,
wherein the third insulator includes a region overlapping with the first oxide and contains at least one of main components elements of the first oxide other than oxygen.
19. The semiconductor device according to claim 15 ,
wherein in the cross section perpendicular to the bottom surface of the second conductor in the channel width direction, the first insulator does not overlap the first region.