Semiconductor device and method for manufacturing semiconductor device
A semiconductor device with high on-state current and high reliability is provided. The semiconductor device includes first to fifth insulators, first to third oxides, and first to fourth conductors; the fifth insulator includes an opening in which the second oxide is exposed; the third oxide is placed in contact with a bottom portion of the opening and a side portion of the opening; the second insulator is placed in contact with the third oxide; the third conductor is provided in contact with the second insulator; the third insulator is placed in contact with a top surface of the third conductor and the second insulator; and the fourth conductor is in contact with the third insulator and the top surface of the third conductor and placed in the opening.
1. A method of manufacturing a semiconductor device, comprising steps of:
forming a first insulator over a substrate;
forming a first oxide film and a first conductive film over the first insulator;
forming a first insulating film and a second insulating film over the first conductive film;
forming an opening reaching the first oxide film in the first conductive film, the first insulating film, and the second insulating film;
forming a third insulating film in the opening;
forming a second conductive film over the third insulating film so that a thickness of the second conductive film at a bottom portion of the opening is larger than a thickness of the second conductive film at a side portion of the opening;
etching the second conductive film at the side portion of the opening so that the second conductive film at the bottom portion of the opening is left;
forming a fourth insulating film over the second conductive film;
forming a third conductive film over the second conductive film; and
performing planarization treatment until the second insulating film is exposed.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein tantalum nitride or titanium nitride is formed for the second conductive film by a sputtering method.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein a metal nitride containing titanium and aluminum is formed for the second conductive film by a sputtering method.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein a metal oxide containing aluminum is formed for the fourth insulating film by an ALD method.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein an insulating film containing silicon and nitrogen is formed for the fourth insulating film by an ALD method.
6. A method of manufacturing a semiconductor device, comprising steps of:
forming a first insulator over a substrate;
forming a first oxide film, a second oxide film, and a first conductive film over the first insulator;
forming a first insulating film to cover side surfaces of the first oxide film, the second oxide film, and the first conductive film;
forming a second insulating film over the first insulating film;
forming an opening reaching the second oxide film in the first conductive film, the first insulating film, and the second insulating film;
forming a third insulating film in the opening;
forming a second conductive film over the third insulating film so that a thickness of the second conductive film at a bottom portion of the opening is larger than a thickness of the second conductive film at a side portion of the opening;
etching the second conductive film at the side portion of the opening so that the second conductive film at the bottom portion of the opening is left;
forming a fourth insulating film and a third conductive film over the second conductive film to fill the opening;
performing planarization treatment until the second insulating film is exposed; and
forming a fifth insulating film in contact with the second insulating film, the third insulating film, the second conductive film, the fourth insulating film, and the third conductive film.
7. The method of manufacturing a semiconductor device according to claim 6 , wherein tantalum nitride or titanium nitride is formed for the second conductive film by a sputtering method.
8. The method of manufacturing a semiconductor device according to claim 6 , wherein a metal nitride containing titanium and aluminum is formed for the second conductive film by a sputtering method.
9. The method of manufacturing a semiconductor device according to claim 6 , wherein a metal oxide containing aluminum is formed for the fourth insulating film by an ALD method.
10. The method of manufacturing a semiconductor device according to claim 6 , wherein an insulating film containing silicon and nitrogen is formed for the fourth insulating film by an ALD method.