Semiconductor device and method for manufacturing semiconductor device
A semiconductor device with high on-state current is provided. The semiconductor device includes a first oxide; a second oxide over the first oxide; a third oxide over the second oxide; a first insulator over the third oxide; a conductor over the first insulator; a second insulator that is in contact with a part of a top surface of the second oxide, a part of a side surface of the second oxide, and a part of a side surface of the third oxide; a third insulator that is in contact with a top surface of the second insulator and the other side surface of the third oxide; a fourth insulator over the third insulator; and a fifth insulator that is in contact with a top surface of the third oxide, a top surface of the first insulator, a top surface of the conductor, and a top surface of the third insulator, where the second oxide includes a first region, a second region, a third region, a fourth region positioned between the first region and the third region, and a fifth region positioned between the second region and the third region, where the conductor is provided above the third region to overlap with the third region, and where the second insulator is in contact with the first region and the second region.
1. A semiconductor device comprising:
a first oxide;
a second oxide over the first oxide;
a third oxide over the second oxide;
a first insulator over the third oxide;
a conductor over the first insulator;
a second insulator being in contact with a part of a top surface of the second oxide, a part of a side surface of the second oxide, and a part of a side surface of the third oxide;
a third insulator being in contact with a top surface of the second insulator and the other part of the side surface of the third oxide;
a fourth insulator over the third insulator; and
a fifth insulator being in contact with a top surface of the third oxide, a top surface of the first insulator, a top surface of the conductor, and a top surface of the third insulator,
wherein the second oxide comprises a first region, a second region, a third region positioned between the first region and the second region, a fourth region positioned between the first region and the third region, and a fifth region positioned between the second region and the third region,
wherein the first region and the second region have lower resistance than the third region,
wherein the fourth region and the fifth region have lower resistance than the third region and have higher resistance than the first region and the second region,
wherein the conductor is provided above the third region to overlap with the third region,
wherein a part of the third oxide and a part of the first insulator are positioned between a side surface of the conductor and a side surface of the third insulator, and
wherein the second insulator is in contact with the first region and the second region.
2. The semiconductor device according to claim 1 ,
wherein the first region, the second region, the fourth region, and the fifth region include one of phosphorus and boron.
3. The semiconductor device according to claim 2 ,
wherein the first region and the second region include a larger amount of phosphorus or boron than the fourth region and the fifth region.
4. The semiconductor device according to claim 1 ,
wherein the first region, the second region, the fourth region, and the fifth region have a larger amount of oxygen vacancies than the third region.
5. The semiconductor device according to claim 4 ,
wherein the first region and the second region have a larger amount of oxygen vacancies than the fourth region and the fifth region.
6. The semiconductor device according to claim 1 ,
wherein the first region, the second region, the fourth region, and the fifth region include a larger amount of hydrogen than the third region.
7. The semiconductor device according to claim 6 ,
wherein the first region and the second region include a larger amount of hydrogen than the fourth region and the fifth region.
8. The semiconductor device according to claim 1 ,
wherein the third oxide overlaps with a part of the fourth region and a part of the fifth region.