Method of manufacturing a SiOCN film, substrate processing apparatus and recording medium

1. A method of manufacturing a semiconductor device, comprising forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle once or more, the cycle comprising performing the following:

(a) supplying a carbon-containing gas to the substrate;

(b) supplying a predetermined element-containing gas to the substrate, the predetermined element including a semiconductor element or a metal element;

(c) supplying an oxidizing gas to the substrate; and

(d) supplying a nitriding gas to the substrate,

wherein in the (a), a first carbon-containing layer is formed directly on a portion of an uppermost surface of the substrate,

wherein in the (b), a predetermined element-containing layer is formed directly on the uppermost surface of the substrate, which has the first carbon-containing layer formed on the portion thereof, and

wherein the cycle further comprises, after the (b) is performed, (e) supplying a carbon-containing gas to the substrate.

2. The method of claim 1 , wherein the cycle comprises performing the (a), the (b), the (e), the (c), and the (d) in this order.

3. The method of claim 1 , wherein the cycle comprises performing the (a), the (b), the (c), the (e), and the (d) in this order.

4. The method of claim 1 , wherein before the cycle is performed once or more, the (d) is performed.

5. The method of claim 4 , wherein a nitriding gas supply time in the (d) performed before the cycle is performed once or more is set to be longer than a nitriding gas supply time in the (d) performed during the cycle.

6. The method of claim 1 , wherein the carbon-containing gas, the predetermined element-containing gas, the oxidizing gas, and the nitriding gas are respectively activated by heat and supplied to the substrate.

7. The method of claim 1 , wherein at least one among the carbon-containing gas, the predetermined element-containing gas, the oxidizing gas, and the nitriding gas is plasma-activated and supplied to the substrate.

8. The method of claim 1 , wherein in the (c), a reducing gas is supplied to the substrate along with the oxidizing gas.

9. The method of claim 1 , wherein the predetermined element includes silicon.

10. The method of claim 1 , wherein the predetermined element is at least one selected from a group consisting of Si, Ge, Ti, Zr, Hf, Ta, Al, Mo, and Ga.

11. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle once or more, the cycle comprising performing the following:

(a) supplying a carbon-containing gas to the substrate;

(b) supplying a predetermined element-containing gas to the substrate, the predetermined element including a semiconductor element or a metal element;

(c) supplying an oxidizing gas to the substrate; and

(d) supplying a nitriding gas to the substrate,

wherein in the (a), a first carbon-containing layer is formed directly on a portion of an uppermost surface of the substrate,

wherein in the (b), a predetermined element-containing layer is formed directly on the uppermost surface of the substrate, which has the first carbon-containing layer formed on the portion thereof, and

wherein the cycle further comprises, after the (b) is performed, (e) supplying a carbon-containing gas to the substrate.