Solid-state imaging device and method of manufacturing the same, and imaging apparatus
A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
1. An imaging device, comprising:
a semiconductor substrate having
an effective pixel region including a first plurality of photoelectric conversion elements configured to receive light,
an optical black region including a second plurality of photoelectric conversion elements,
a first groove portion provided between adjacent photoelectric conversion elements in the effective pixel region,
a second groove portion provided in the optical black region;
a third groove portion provided between the first groove portion and the second groove portion; and
a metallic oxide disposed, at least in part, in the first groove portion and the third groove portion, wherein the metallic oxide extends from the first groove portion to the third groove portion along a light-incident side of the semiconductor substrate.
2. The imaging device of claim 1 , further comprising an insulating material disposed, at least in part, in the first groove portion.
3. The imaging device of claim 2 , wherein the insulating material comprises silicon oxide.
4. The imaging device of claim 2 , wherein the insulating material is disposed adjacent to the metallic oxide in the first groove portion.
5. The imaging device of claim 2 , wherein the first groove portion is included in a lattice-shaped grooving portion that surrounds at least one of the first plurality of photoelectric conversion elements in the effective pixel region in a plan view.
6. The imaging device of claim 5 , wherein the lattice-shaped grooving portion surrounds each of the first plurality of photoelectric conversion elements in the effective pixel region in a plan view.
7. The imaging device of claim 2 , further comprising:
an insulating material disposed, at least in part, in the second groove portion; and
a metallic oxide disposed, at least in part, in the second groove portion.
8. The imaging device of claim 7 , wherein the insulating material disposed, at least in part, in the second groove portion is a same insulating material as the insulating material disposed, at least in part, in the first groove portion.
9. The imaging device of claim 7 , wherein the metallic oxide disposed, at least in part, in the second groove portion is a same metallic oxide as the metallic oxide disposed, at least in part, in the first groove portion.
10. The imaging device of claim 2 , wherein a part of the insulating material is disposed outside the first groove portion.
11. The imaging device of claim 1 , wherein the metallic oxide comprises hafnium oxide.
12. The imaging device of claim 1 , wherein the metallic oxide is selected from the group consisting of hafnium oxide, tantalum pentoxide, and zirconium dioxide.
13. The imaging device of claim 1 , wherein a depth dimension of the first groove portion is larger than a width dimension of the first groove portion.
14. The imaging device of claim 1 , further comprising a light-shielding component disposed adjacent to at least part of the semiconductor substrate in the optical black region.
15. The imaging device of claim 14 , wherein the light-shielding component comprises tungsten.
16. The imaging device of claim 1 , wherein the imaging device is a rear-surface irradiation type.
17. The imaging device of claim 1 , further comprising an interconnection layer, wherein the semiconductor substrate is disposed between the interconnection layer and a plurality of color filters configured to receive light.
18. The imaging device of claim 17 , wherein the plurality of color filters are arranged in an RGB color filter layer.
19. The imaging device of claim 17 , further comprising a plurality of microlenses formed adjacent to the plurality of color filters.
20. The imaging device of claim 19 , wherein the plurality of microlenses comprise an organic material.
21. The imaging device of claim 1 , wherein the first plurality of photoelectric conversion elements share a reset transistor, an amplification transistor, and an address transistor.
22. The imaging device of claim 21 , wherein a driving interconnection connected to a gate of a transfer transistor is disposed in a horizontal direction.
23. The imaging device of claim 21 , wherein a driving interconnection connected to a gate of the reset transistor is disposed in a horizontal direction.
24. The imaging device of claim 21 , wherein a driving interconnection connected to a gate of the address transistor is disposed in a horizontal direction.
25. The imaging device of claim 21 , further comprising a signal line connected to the address transistor, wherein the signal line is disposed in a vertical direction.
26. The imaging device of claim 1 , wherein the first plurality of photoelectric conversion elements comprise n-type regions of the semiconductor substrate.
27. The imaging device of claim 1 , wherein the first groove portion is provided in a p-type region of the semiconductor substrate.
28. The imaging device of claim 1 , further comprising a peripheral circuit configured to perform analog-to-digital conversion.
29. The imaging device of claim 1 , wherein the first groove portion has a width that narrows with depth of the first groove portion in the semiconductor substrate.
30. An electronic apparatus, comprising:
a lens configured to receive and focus light; and
an imaging device, comprising:
a semiconductor substrate having
an effective pixel region including a first plurality of photoelectric conversion elements configured to receive light,
an optical black region including a second plurality of photoelectric conversion elements,
a first groove portion provided between adjacent photoelectric conversion elements in the effective pixel region,
a second groove portion provided in the optical black region;
a third groove portion provided between the first groove portion and the second groove portion; and
a metallic oxide disposed, at least in part, in the first groove portion and the third groove portion, wherein the metallic oxide extends from the first groove portion to the third groove portion along a light-incident side of the semiconductor substrate.