Powered anode for ion source for DLC and reactive processes
The present invention provides a charged particle source comprising a plasma processing chamber that has a plasma source, a gas supply and an ion extraction grid that are each operatively connected to the processing chamber. A conducting plate is located adjacent to a wall of the plasma source. The conducting plate has a surface with a plurality of grooves that face the wall of the plasma source. A substrate support is disposed within an interior portion of the processing chamber for supporting a substrate.
1. A charged particle source comprising:
a plasma processing chamber;
a plasma source having a wall operatively connected to the processing chamber;
an ion extraction grid operatively connected to the processing chamber;
a first conducting plate within the plasma source and adjacent to the wall of the plasma source, the first conducting plate having a surface having a plurality of grooves, the plurality of grooves facing the wall of the plasma source;
a second conducting plate within the plasma source, the second conducting plate being positioned to block the line of sight of the plurality of grooves of the first conducting plate to a plasma generation region;
a substrate on a substrate support disposed in an interior portion of the processing chamber; and
a gas supply operatively connected to the processing chamber.
2. The charged particle source according to claim 1 wherein the plurality of grooves having an aspect ratio of greater than two to one.
3. The charged particle source according to claim 1 wherein the plurality of grooves having a constant pitch.
4. The charged particle source according to claim 1 wherein the plurality of grooves having a constant aspect ratio.
5. The charged particle source according to claim 1 wherein the plurality of grooves having a variable pitch.
6. The charged particle source according to claim 1 wherein the plurality of grooves having a variable aspect ratio.
7. The charged particle source according to claim 1 wherein the plurality of grooves are in a perpendicular orientation with respect to the surface of the first conducting plate.
8. The charged particle source according to claim 1 wherein the first conducting plate further comprising a second surface, said second surface having a second plurality of grooves.
9. The charged particle source according to claim 1 wherein the first conducting plate is attached to the positive side of the plasma source.
10. A charged particle source comprising:
a plasma processing chamber;
a plasma source having a wall operatively connected to the processing chamber;
an ion extraction grid operatively connected to the processing chamber;
a conducting plate within the plasma source at a distance from the wall of the plasma source, the conducting plate having a plurality of grooves, the conducting plate being positioned to block the line of sight of all of the plurality of grooves of the conducting plate from a plasma generation region;
a substrate on a substrate support disposed in an interior portion of the processing chamber; and
a gas supply operatively connected to the processing chamber.
11. The charged particle source according to claim 10 wherein the plurality of grooves having an aspect ratio of greater than two to one.
12. The charged particle source according to claim 10 wherein the plurality of grooves having a constant pitch.
13. The charged particle source according to claim 10 wherein the plurality of grooves having a constant aspect ratio.
14. The charged particle source according to claim 10 wherein the plurality of grooves having a variable pitch.
15. The charged particle source according to claim 10 wherein the plurality of grooves having a variable aspect ratio.
16. The charged particle source according to claim 1 wherein the plurality of grooves are in a slanted orientation with respect to the surface of the first conducting plate.
17. The charged particle source according to claim 10 wherein the conducting plate further comprising a second surface, said second surface having a second plurality of grooves, the second surface having a separation between 0.5 mm and 20 mm.
18. The charged particle source according to claim 10 wherein the conducting plate is attached to the wall of the plasma source.
19. The charged particle source according to claim 10 wherein said distance is between 0.5 mm and 20 mm.
20. The charged particle source according to claim 10 wherein said distance is adjustable.
21. A charged particle source comprising:
a plasma processing chamber;
a plasma source having a wall operatively connected to the processing chamber;
a plurality of ion extraction grids operatively connected to the processing chamber;
a conducting plate within the plasma source at an adjustable distance from the wall of the plasma source, the conducting plate having a plurality of grooves, the conducting plate being positioned to block the line of sight of all of the plurality of grooves of the conducting plate from a plasma generation region, the conducting plate being opposite the plurality of ion extraction grids;
a substrate on a substrate support disposed in an interior portion of the processing chamber; and
a gas supply operatively connected to the processing chamber.