Composite abrasive particles for chemical mechanical planarization composition and method of use thereof
Polishing compositions comprising ceria coated silica particles offer minimal topography, reduced oxide and nitride losses, while providing high oxide polish rates. These formulations are especially useful for polishing large structures typically used in 3D NAND device manufacturing.
1. A polishing method for chemical mechanical planarization of a semiconductor substrate comprising at least one surface having at least one oxide layer and at least one stopping layer beneath at least part of said at least one oxide layer, and at least one trench within said substrate, said at least one trench comprising a portion of said at least one oxide layer in said trench, said at least one trench having a trench width of greater than 0.01 mm, said at least one oxide layer comprises one or more active oxide regions located on either side of said at least one trench, said one or more active oxide regions having a width greater than 0.1 mm, comprising the steps of:
a) contacting the at least one surface with a polishing pad;
b) delivering a polishing composition to the at least one surface, the polishing composition consisting essentially of:
composite particles comprising core particles with surfaces covered by nanoparticles;
an additive selected from a compound having a functional group selected from the group consisting of organic carboxylic acids, amino acids, aminocarboxylic acids, N-acylamino acids, and their salts thereof; organic sulfonic acids and salts thereof; organic phosphonic acids and salts thereof; polymeric carboxylic acids and salts thereof; polymeric sulfonic acids and salts thereof; polymeric phosphonic acids and salts thereof; arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, substituted phenols, sulfonamides, thiols, polyols having hydroxyl groups, polymers with alkoxylate groups and combinations thereof;
a pH-adjusting agent selected from the group consisting of sodium hydroxide, potassium hydroxide, cesium hydroxide, ammonium hydroxide, quaternary organic ammonium hydroxide, and combinations thereof;
and
DI water;
wherein
the core particle is selected from the group consisting of silica, alumina, titania, zirconia, polymer particle, and combinations thereof; and the nanoparticles are selected from the compounds of the group consisting of zirconium, titanium, iron, manganese, zinc, cerium, yttrium, calcium, magnesium, fluorine, lanthanum, strontium nanoparticle, and combinations thereof; and
the polishing composition has a pH of about 2 to about 12;
and
C) polishing the at least one surface with the polishing composition to expose said stopping layer.
2. The method of claim 1 , wherein the composite particles in the polishing composition are ceria coated silica composite particles, the pH-adjusting agent in the polishing composition is ammonium hydroxide; and the polishing composition has a pH ranging from 4 to 8.
3. The method of claim 1 wherein at least one trench has a trench width of ≥0.5 mm and at least one of the one or more active oxide regions has a width ≥2.0 mm.
4. The method of claim 1 wherein said substrate has at least two trenches, and at least two active oxide regions, each of said at least two trenches having a trench width of ≥0.5 mm to 10 mm and each of said at least two active oxide regions, having a width ≥2.0 mm to 50 mm.
5. The method of claim 1 wherein at least one of the one or more active oxide regions is greater than 1 micron in height prior to said polishing step.
6. The method of claim 1 wherein the structure is used for 3D-NAND memory fabrication.
7. The method of claim 1 , wherein the nanoparticles are ceria nanoparticle, and the composite particles are amorphous silica particles having surfaces covered by singly crystalline ceria nanoparticles.
8. The method of claim 7 , wherein the polishing composition has a pH ranging from 4 to 10.
9. The method of claim 1 , wherein the the additive in the polishing composition is selected from polymeric carboxylic acids and salts thereof; polymers with alkoxylate groups; and combinations thereof.
10. The method of claim 9 , wherein said polymeric carboxylic acids and salts thereof are selected from the group consisting of polyacrylic acid, poly-methacrylic acid, polyvinyl alcohol and polystyrenesulfonic acid or salts thereof, and said polymers with alkoxylate groups are selected from the group consisting of polyethylene glycol and polyethylene oxide.
11. The method of claim 1 , wherein the at least one oxide layer is a silicon oxide layer.
12. The method of claim 11 , wherein polishing removal rate for the at least one oxide layer is equal to or greater than 5000 A/min.