Slurry composition for chemical mechanical polishing
A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition including a first organic polishing booster including a quaternary amine group; a second organic polishing booster including an amino acid; and a carrier; wherein inorganic polishing particles are not included in the slurry composition or included in an amount of less than 0.01% by weight.
1. A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition comprising:
a first organic polishing booster including a quaternary amine group;
a second organic polishing booster including an amino acid, which changes the selectivity of polysilicon with respect to a dielectric when included with the first organic polishing booster; and
a carrier;
wherein inorganic polishing particles are not included in the slurry composition, and
wherein an etch selectivity of the slurry composition for polysilicon with respect to either of silicon oxide or silicon nitride is in a range of about 150 to about 2,000.
2. The slurry composition as claimed in claim 1 , wherein the first organic polishing booster is included in the slurry composition in an amount of about 10 ppm to about 100,000 ppm by weight.
3. The slurry composition as claimed in claim 1 , wherein the first organic polishing booster has a weight average molecular weight of about 1,000 to about 1,000,000.
4. The slurry composition as claimed in claim 3 , wherein:
the first organic polishing booster includes a moiety represented by one of Formulae 1 to 6:
in Formulae 1 to 6,
X is fluorine (F), chlorine (Cl), bromine (Br), or iodine (I),
p, q, and x are each independently an integer of 1 to 5,
n is an integer that allows a weight average molecular weight of the first organic polishing booster to be in a range of 1,000 to 1,000,000, and
* is a bonding location to an adjacent atom.
5. The slurry composition as claimed in claim 1 , wherein the second organic polishing booster is included in the slurry composition in an amount of about 10 ppm to about 100,000 ppm by weight.
6. The slurry composition as claimed in claim 5 , wherein the second organic polishing booster includes arginine, histidine, lysine, aspartic acid, glutamic acid, serine, threonine, asparagine, glutamine, cysteine, selenocysteine, glycine, proline, alanine, valine, leucine, isoleucine, methionine, phenylalanine, tyrosine, or tryptophan.
7. The slurry composition as claimed in claim 1 , wherein the slurry composition has a pH value of about 4 to about 11.
8. The slurry composition as claimed in claim 1 , wherein the slurry composition does not include any of silica, alumina, ceria, titania, zirconia, magnesia, germania, and mangania.
9. The slurry composition as claimed in claim 1 , wherein the slurry composition does not include a dispersion stabilizer.
10. The slurry composition of claim 1 , wherein the second organic polishing booster including the amino acid increases the selectivity of polysilicon with respect to a dielectric including silicon when included with the first organic polishing booster.
11. A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition comprising:
a first organic polishing booster including a quaternary amine group, the first organic polishing booster being included in the slurry composition in an amount of about 10 ppm to about 100,000 ppm by weight;
a second organic polishing booster including an amino acid, the second organic polishing booster being included in the slurry composition in an amount of about 10 ppm to about 100,000 ppm by weight, and the second organic polishing booster changing the selectivity of polysilicon with respect to a dielectric when included with the first organic polishing booster; and
a surfactant; and
a carrier,
wherein the slurry composition does not include inorganic polishing particles, and
wherein an etch selectivity of the slurry composition for polysilicon with respect to either of silicon oxide or silicon nitride is in a range of about 150 to about 2,000.
12. The slurry composition as claimed in claim 11 , wherein the first organic polishing booster has a weight average molecular weight of about 1,000 to about 1,000,000.
13. The slurry composition as claimed in claim 12 , wherein:
the first organic polishing booster includes a moiety represented by one of Formulae 1 to 6:
in Formulae 1 to 6,
X is fluorine (F), chlorine (Cl), bromine (Br), or iodine (I),
p, q, and x are each independently an integer of 1 to 5,
n is an integer that allows a weight average molecular weight of the first organic polishing booster to be in a range of 1,000 to 1,000,000, and
* is a bonding location to an adjacent atom.
14. The slurry composition as claimed in claim 11 , wherein the second organic polishing booster includes arginine, histidine, lysine, aspartic acid, glutamic acid, serine, threonine, asparagine, glutamine, cysteine, selenocysteine, glycine, proline, alanine, valine, leucine, isoleucine, methionine, phenylalanine, tyrosine, or tryptophan.
15. The slurry composition as claimed in claim 11 , wherein the slurry composition has a pH value of about 8 to about 11.
16. The slurry composition as claimed in claim 11 , further comprising a biocide.
17. The slurry composition as claimed in claim 11 , wherein:
the first organic polishing booster includes a moiety represented by Formula 2:
in Formula 2,
X is fluorine (F), chlorine (Cl), bromine (Br), or iodine (I),
p is 6,
q is 3,
n is an integer that allows a weight average molecular weight of the first organic polishing booster to be in a range of 1,000 to 1,000,000, and
* is a bonding location to an adjacent atom.
18. The slurry composition of claim 11 , wherein the second organic polishing booster including the amino acid increases the selectivity of polysilicon with respect to a dielectric including silicon when included with the first organic polishing booster.
19. A slurry composition for a chemical mechanical polishing (CMP) process for polishing polysilicon, the slurry composition comprising:
a first organic polishing booster including a quaternary amine group;
a second organic polishing booster including an amino acid, which changes the selectivity of polysilicon with respect to a dielectric when included with the first organic polishing booster;
a surfactant;
a pH control agent; and
a carrier,
wherein the slurry composition:
has a pH value of about 4 to about 11,
does not include inorganic polishing particles, and
does not include a dispersion stabilizer for uniform distribution of the inorganic polishing particles, and
wherein an etch selectivity of the slurry composition for polysilicon with respect to either of silicon oxide or silicon nitride is in a range of about 150 to about 2,000.
20. The slurry composition as claimed in claim 19 , wherein the first organic polishing booster has a weight average molecular weight of about 36,000 to about 500,000.
21. The slurry composition of claim 19 , wherein the second organic polishing booster including the amino acid increases the selectivity of polysilicon with respect to a dielectric including silicon when included with the first organic polishing booster.