Compositions and processes for depositing carbon-doped silicon-containing films
Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R 5 Si(NR 3 R 4 ) x H 3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R 6 Si(OR 7 ) x H 3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R 8 N(SiR 9 (NR 10 R 11 )H) 2 ; an organoaminosilane having a formula of R 8 N(SiR 9 LH) 2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR 1 R 2 )H 3 . Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
1. A composition for depositing a carbon-doped silicon containing film comprising:
a precursor comprising at least one
organoaminosilane having a formula of R 8 N(SiR 9 (NR 10 R 11 )H) 2 ,
wherein R 8 and R 9 are each independently selected from the group consisting of hydrogen, C 1 to C 10 linear or branched alkyl, a C 3 to C 10 cyclic alkyl group, a linear or branched C 2 to C 10 alkenyl group, a linear or branched C 2 to C 10 alkynyl group, a C 5 to C 10 aromatic group, and a C 3 to C 10 saturated or unsaturated heterocyclic group; and R 10 and R 11 are each independently selected from the group consisting of a C 1 to C 10 linear or branched alkyl group, a C 3 to C 10 cyclic alkyl group, a linear or branched C 2 to C 10 alkenyl group, a linear or branched C 2 to C 10 alkynyl group, a C 5 to C 10 aromatic group, and a C 3 to C 10 saturated or unsaturated heterocyclic group; wherein R 10 and R 11 can form a cyclic ring or an alkyl-substituted cyclic ring; and L=Cl, Br, I.
2. The composition of claim 1 comprising R 8 N(SiR 9 (NR 10 R 11 )H) 2 wherein R 8 is selected from the group consisting of Me, Et, n Pr, i Pr, n Bu, i Bu, s Bu, t Bu, isomers of pentyl, vinyl, phenyl, and alkyl substituted phenyl.
3. The composition of claim 1 comprising R 8 N(SiR 9 (NR 10 R 11 )H) 2 wherein R 9 is selected from the group consisting of hydrogen, Me, Et, n Pr, i Pr, n Bu, i Bu, s Bu, t Bu, isomers of pentyl, vinyl, phenyl, and alkyl substituted phenyl.
4. The composition of claim 1 comprising R 8 N(SiR 9 (NR 10 R 11 )H) 2 wherein R 10 and R 11 are independently selected from the group consisting of Me, Et, n Pr, i Pr, n Bu, i Bu, s Bu, t Bu, isomers of pentyl, vinyl, phenyl, and alkyl substituted phenyl.