Solid-state image pickup apparatus and image pickup system

1. An apparatus comprising:

a first substrate which is provided with a photoelectric conversion element and a floating diffusion region; and

a second substrate which is provided with a transistor,

wherein the floating diffusion region has a semiconductor region on which a first insulating film is disposed, and the transistor has a silicide region on which a second insulating film is disposed,

wherein the first substrate and the second substrate are stacked with each other so that the first insulating film is disposed between the first substrate and the second substrate, and

wherein the silicide region is arranged between the second insulating film and a semiconductor region of the second substrate.

2. The apparatus according to claim 1 , wherein a gate electrode of the transistor is arranged between the second insulating film and the second substrate.

3. The apparatus according to claim 2 , wherein the second insulating film is in contact with the silicide region.

4. The apparatus according to claim 2 , wherein a source/drain region of the transistor has the silicide region, and the gate electrode has a metal compound layer.

5. The apparatus according to claim 4 , wherein the apparatus is provided with an AD converter.

6. The apparatus according to claim 5 further comprising a microlens disposed on the first substrate.

7. The apparatus according to claim 6 , further comprising a light-shielding film disposed between a micro lens and the first substrate.

8. The apparatus according to claim 7 , further comprising an antireflection film disposed between the micro lens and the photoelectric conversion element, wherein the antireflection film extend between the light-shielding film and the first substrate.

9. The apparatus according to claim 4 , wherein the transistor is included in a signal processing circuit.

10. The apparatus according to claim 1 , wherein a first wiring layer is disposed above the first substrate, the first insulating film is arranged between the first wiring layer and the first substrate, a second wiring layer is disposed above the second substrate, and the second insulating film is arranged between the second wiring layer and the second substrate.

11. The apparatus according to claim 10 , wherein a film which contains silicon nitride or silicon carbide, is arranged between the first wiring layer and the second wiring layer.

12. The apparatus according to claim 11 , wherein the first insulating film contains silicon oxide.

13. The apparatus according to claim 12 , wherein the first insulating film is in contact with the semiconductor region of the floating diffusion region.

14. The apparatus according to claim 11 , wherein the second wiring layer includes a wire whose main component is copper.

15. The apparatus according to claim 14 , wherein the first substrate is provided with a transistor that forms a source follower circuit.

16. The apparatus according to claim 11 ,

wherein a third wiring layer is disposed above the first substrate, the first wiring layer is arranged between the third wiring layer and the first substrate, a fourth wiring layer is disposed above the second substrate, and the second wiring layer is arranged between the fourth wiring layer and the second substrate, and

wherein a portion of the third wiring layer is bonded with a portion of the fourth wiring layer.

17. The apparatus according to claim 11 , wherein the apparatus is provided with a through electrode disposed through an insulating layer, the insulating layer is arranged between the first insulating film and the second insulating film, and the through electrode connects a wire of the first wiring layer and a wire of the second wiring layer.

18. The apparatus accordingly to claim 17 , wherein the second substrate is arranged between the first wiring layer and the second wiring layer.

19. The apparatus according to claim 18 , wherein the floating diffusion region has a contact that is connected to a plug.

20. The apparatus according to claim 19 , wherein the first insulating film is disposed on the photoelectric conversion element, and the first substrate has no silicide layer between the photoelectric conversion element and the first insulating film.

21. The apparatus according to claim 10 , wherein the floating diffusion region does not have a cobalt silicide layer.

22. The apparatus according to claim 10 , wherein the apparatus is provided with an electrical connection between the first wiring layer and the second wiring layer.

23. The apparatus according to claim 22 , wherein an interlayer insulating film is arranged between the first wiring layer and the second wiring layer.

24. The apparatus according to claim 22 , wherein an interlayer insulating film is arranged between the first wiring layer and the second wiring layer.

25. The apparatus according to claim 10 , wherein the first wiring layer and the second wiring layer are arranged between the first substrate and the second substrate.

26. The apparatus according to claim 1 , wherein a film which contains silicon nitride or silicon carbide is disposed between the second insulating film and the silicide region.

27. The apparatus according to claim 26 , wherein the silicide region contains cobalt.

28. The apparatus according to claim 26 , wherein an electrode for transferring an electric charge of the photoelectric conversion element to the floating diffusion region, is arranged between the first insulating film and the first substrate.

29. The apparatus according to claim 28 , wherein the first substrate has a first surface and a second surface, the electrode is arranged on the first surface, the first substrate includes an N-type region and the a P-type region, the N-type region constitutes the photoelectric conversion element, and the P-type region is disposed between the second surface and the N-type region.

30. A system comprising:

the apparatus according to claim 1 ; and

a signal processing section that processes a signal output from the apparatus.