Light-emitting device and method for manufacturing the same
A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.
1. A method for manufacturing a light-emitting device, comprising the steps of:
forming an EL layer comprising an organic compound over a first electrode;
forming a first layer comprising the organic compound over a terminal electrode;
forming a bonding layer comprising an opening;
forming a third layer comprising a soluble resin over the first layer;
forming a transfer substrate over and in contact with the third layer; and
separating the third layer from the first layer when the transfer substrate is removed,
wherein the EL layer and the first layer are formed at the same time,
wherein the first layer is formed in a region on the terminal electrode,
wherein the opening is over the first layer, and
wherein the EL layer is separated from the first layer.
2. The method according to claim 1 , wherein the terminal electrode is formed by using a metal element selected from aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium (Hf), vanadium (V), niobium (Nb), manganese, magnesium, zirconium, and beryllium.
3. The method according to claim 1 , wherein the terminal electrode is formed by using a conductive material selected from indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, and indium tin oxide to which silicon oxide is added.
4. The method according to claim 1 ,
wherein the bonding layer having an opening is provided between the terminal electrode and the transfer substrate, and
wherein the third layer is provided in the opening.
5. The method according to claim 1 , wherein the soluble resin is any of a soluble acrylic resin, a soluble polyimide resin, and a soluble epoxy resin.
6. The method according to claim 1 , wherein the organic compound is any of a substance having a hole-injection property, a substance having a hole-transport property, a substance having an electron-injection property, a substance having an electron-transport property, and a bipolar substance.
7. A method for manufacturing a light-emitting device, comprising the steps of:
forming an EL layer comprising an organic compound over a first electrode;
forming a first layer comprising the organic compound over a terminal electrode;
forming a second layer comprising a conductive material over the first layer;
forming a bonding layer comprising an opening;
forming a third layer comprising a soluble resin over the second layer;
forming a transfer substrate over and in contact with the third layer; and
separating the second layer and the third layer from the first layer when the transfer substrate is removed,
wherein the EL layer and the first layer are formed at the same time,
wherein the first layer is formed in a region on the terminal electrode,
wherein the opening is over the second layer, and
wherein the EL layer is separated from the first layer.
8. The method according to claim 7 , wherein the terminal electrode is formed by using a metal element selected from aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium (Hf), vanadium (V), niobium (Nb), manganese, magnesium, zirconium, and beryllium.
9. The method according to claim 7 , wherein the terminal electrode is formed by using a conductive material selected from indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, and indium tin oxide to which silicon oxide is added.
10. The method according to claim 7 ,
wherein the bonding layer is provided between the terminal electrode and the transfer substrate, and
wherein the third layer is provided in the opening.
11. The method according to claim 7 , wherein the soluble resin is any of a soluble acrylic resin, a soluble polyimide resin, and a soluble epoxy resin.
12. The method according to claim 7 , wherein the organic compound is any of a substance having a hole-injection property, a substance having a hole-transport property, a substance having an electron-injection property, a substance having an electron-transport property, and a bipolar substance.
13. The method according to claim 7 , wherein the second layer is in a region of the opening.
14. A method for manufacturing a light-emitting device, comprising the steps of:
forming an EL layer comprising an organic compound over a first electrode;
forming a second electrode over the EL layer;
forming a first layer comprising the organic compound over a terminal electrode;
forming a second layer comprising a conductive material over the first layer;
forming a bonding layer comprising an opening;
forming a third layer comprising a soluble resin over the second layer;
forming a transfer substrate over and in contact with the third layer; and
separating the second layer and the third layer from the first layer when the transfer substrate is removed,
wherein the EL layer and the first layer are formed at the same time,
wherein the second electrode and the second layer are formed at the same time,
wherein the first layer is formed in a region on the terminal electrode,
wherein the opening is over the second layer, and
wherein the EL layer is separated from the first layer.
15. The method according to claim 14 , wherein the terminal electrode is formed by using a metal element selected from aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium (Hf), vanadium (V), niobium (Nb), manganese, magnesium, zirconium, and beryllium.
16. The method according to claim 14 , wherein the terminal electrode is formed by using a conductive material selected from indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, and indium tin oxide to which silicon oxide is added.
17. The method according to claim 14 ,
wherein the bonding layer is provided between the terminal electrode and the transfer substrate, and
wherein the third layer is provided in the opening.
18. The method according to claim 14 , wherein the soluble resin is any of a soluble acrylic resin, a soluble polyimide resin, and a soluble epoxy resin.
19. The method according to claim 14 , wherein the organic compound is any of a substance having a hole-injection property, a substance having a hole-transport property, a substance having an electron-injection property, a substance having an electron-transport property, and a bipolar substance.
20. The method according to claim 14 , wherein the second layer is in a region of the opening.