Magnetoresistive element
View Patent ↗According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.
1. A magnetoresistive element, comprising:
a first magnetic layer;
a nonmagnetic layer provided above the first magnetic layer; and
a second magnetic layer provided above the nonmagnetic layer,
wherein each of the first and second magnetic layers includes (i) one of Co and Fe, and (ii) a material having a higher standard electrode potential than Co and Fe, and
wherein a composition of the material having the higher standard electrode potential in the first magnetic layer is different from a composition of the material having the higher standard electrode potential in the second magnetic layer.
2. The element of claim 1 , wherein the material having the higher standard electrode potential is Mo or W.
3. The element of claim 1 , wherein the first magnetic layer is a storage layer, the second magnetic layer is a reference layer, and the nonmagnetic layer is a tunnel barrier layer.
4. The element of claim 1 , wherein each of the first and second magnetic layers further contains B.
5. The element of claim 4 , wherein a total composition of B and the material having the higher standard electrode potential is 1 to 30 at %.
6. The element of claim 3 , wherein the tunnel barrier layer is MgO.
7. A magnetoresistive element, comprising:
a first magnetic layer;
a first nonmagnetic layer provided above the first magnetic layer;
a second magnetic layer provided above the first nonmagnetic layer;
a second nonmagnetic layer provided above the second magnetic layer; and
a third magnetic layer provided above the second nonmagnetic layer,
wherein each of the first and second magnetic layers includes (i) one of Co and Fe, and (ii) a material having a higher standard electrode potential than Co and Fe, and
wherein a composition of the material having the higher standard electrode potential in the first magnetic layer is different from a composition of the material having the higher standard electrode potential in the second magnetic layer.
8. The element of claim 7 , wherein the material having the higher standard electrode potential is Mo or W.
9. The element of claim 7 , wherein the first magnetic layer is a storage layer, the first nonmagnetic layer is a tunnel barrier layer, the second magnetic layer is a reference layer, the second nonmagnetic layer is a spacer layer, and the third magnetic layer is a shift cancelling layer.
10. The element of claim 7 , wherein each of the first and second magnetic layers further contains B.
11. The element of claim 10 , wherein a total composition of B and the material having the higher standard electrode potential is 1 to 30 at %.
12. A magnetoresistive element, comprising:
a first magnetic layer;
a first nonmagnetic layer provided above the first magnetic layer;
a second magnetic layer provided above the first nonmagnetic layer;
a second nonmagnetic layer provided above the second magnetic layer; and
a third magnetic layer provided above the second nonmagnetic layer,
wherein each of the first and second magnetic layers includes (i) one of Co and Fe, and (ii) a material having a higher standard electrode potential than Co and Fe,
wherein the material having the higher standard electrode potential is Mo or W,
wherein the first magnetic layer is a storage layer, the first nonmagnetic layer is a tunnel barrier layer, the second magnetic layer is a reference layer, the second nonmagnetic layer is a spacer layer, and the third magnetic layer is a shift cancelling layer, and
wherein the tunnel barrier layer is MgO and the spacer layer is Ru.
13. A magnetoresistive element, comprising:
a first magnetic layer;
a first nonmagnetic layer provided above the first magnetic layer;
a second magnetic layer provided above the first nonmagnetic layer;
a second nonmagnetic layer provided above the second magnetic layer; and
a third magnetic layer provided above the second nonmagnetic layer,
wherein each of the first and second magnetic layers includes (i) one of Co and Fe, and (ii) a material having a higher standard electrode potential than Co and Fe,
wherein the material having the higher standard electrode potential is Mo or W,
wherein the first magnetic layer is a storage layer, the first nonmagnetic layer is a tunnel barrier layer, the second magnetic layer is a reference layer, the second nonmagnetic layer is a spacer layer, and the third magnetic layer is a shift cancelling layer, and
wherein the shift cancelling layer has a lattice layer structure in which a magnetic material film and a nonmagnetic material film are layered.