IP Library Granted Patent US 10,170,286
Granted Patent B2
US 10,170,286 · App. 15/281,844 · Granted Jan 1, 2019

In-situ cleaning using hydrogen peroxide as co-gas to primary dopant or purge gas for minimizing carbon deposits in an ion source

Inventors: Neil K. Colvin (Merrimack, NH); Tseh-Jen Hsieh (Rowley, MA)
Assignee: Axcelis Technologies, Inc.
H01J37/32862C23C14/48H01J37/08H01J37/3171H01J2237/006H01J2237/022H01J2237/08H01J2237/18H01J2237/31705
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Quick Facts
Patent No.
US 10,170,286
App. No.
15/281,844
Granted
Jan 1, 2019
Kind
B2
Abstract

An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. A source gas flow controller controls a flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides a predetermined concentration of hydrogen peroxide co-gas to the ion source chamber, and a hydrogen peroxide co-gas flow controller controls a flow of the hydrogen peroxide gas to the ion source chamber. The hydrogen peroxide co-gas decomposes within the ion source chamber and reacts with the atomic carbon from the molecular carbon source gas in the ion source chamber, forming hydrocarbons within the ion source chamber. An inert gas is further introduced and ionized to counteract oxidation of a cathode due to the decomposition of the hydrogen peroxide. A vacuum pump system removes the hydrocarbons from the ion source chamber, wherein deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source chamber is increased.

Claims (20)

1. An ion source assembly for improving ion implantation performance, the ion source assembly comprising:

an ion source chamber;

a source gas supply configured to provide a molecular carbon source gas to the ion source chamber;

a source gas flow controller configured to control a flow of the molecular carbon source gas to the ion source chamber during periods of ion implantation;

an excitation source configured to excite the molecular carbon source gas, therein forming carbon ions and residual carbon;

an extraction electrode configured to extract the carbon ions from the ion source chamber, therein forming an ion beam;

a hydrogen peroxide co-gas supply configured to provide a predetermined concentration of hydrogen peroxide gas to the ion source chamber;

a hydrogen peroxide co-gas flow controller configured to control a flow of the hydrogen peroxide gas to the ion source chamber as a purge gas during periods of non-implantation, wherein the hydrogen peroxide gas decomposes within the ion source chamber and reacts with the residual carbon from the molecular carbon source gas in the ion source chamber, therein forming hydrocarbons within the ion source chamber; and

a vacuum pump system configured to remove the hydrocarbons from the ion source chamber, wherein deposition of the residual carbon within the ion source chamber is reduced and a lifetime of the ion source chamber is increased.

2. The ion source assembly of claim 1 , wherein the molecular carbon source gas comprises toluene.

3. The ion source assembly of claim 1 , wherein the molecular carbon source gas and the hydrogen peroxide gas are introduced simultaneously into the ion source chamber.

4. The ion source assembly of claim 1 , further comprising an inert gas supply configured to provide an inert gas to the ion source chamber.

5. The ion source assembly of claim 4 , wherein the inert gas comprises argon.

6. The ion source assembly of claim 1 , wherein the molecular carbon source gas comprises a gaseous hydrocarbon.

7. The ion source assembly of claim 1 , wherein the source gas flow controller and the hydrogen peroxide co-gas flow controller are separate controllers.

8. The ion source assembly of claim 1 , wherein the source gas flow controller and the hydrogen peroxide co-gas flow controller are a single controller.

9. The ion source assembly of claim 1 , wherein the molecular carbon source gas and the hydrogen peroxide gas are supplied to the ion source chamber through separate inlets.

10. The ion source assembly of claim 1 , wherein the molecular carbon source gas and the hydrogen peroxide gas are supplied to the ion source chamber through a common inlet.

11. The system of claim 1 , wherein the molecular carbon source gas and the hydrogen peroxide co-gas are introduced sequentially into the ion source chamber.

12. The system of claim 1 , wherein the molecular carbon source gas and the hydrogen peroxide co-gas are pre-mixed prior to introduction into the ion source chamber.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Apr 7, 2023
From: SILICON VALLEY BANK A DIVISION OF FIRST-CITIZENS BANK & TRUST COMPANY
To: AXCELIS TECHNOLOGIES, INC.
Reel/Frame 063270/0277 →
SECURITY INTEREST Recorded Jul 31, 2020
From: AXCELIS TECHNOLOGIES, INC.
To: SILICON VALLEY BANK, AS ADMINISTRATIVE AGENT
Reel/Frame 053375/0055 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2016
From: COLVIN, NEIL K.; HSIEH, TSEH-JEN
To: AXCELIS TECHNOLOGIES, INC.
Reel/Frame 040326/0705 →
Continuity (1)
Related Publication 20180096828A1 · Apr 5, 2018
Cited By (1)
US 12,278,141