Light emitting structure and a manufacturing method thereof

1. A light-emitting structure, comprising:

a semiconductor light-emitting element comprising a first connection point and a second connection point;

a first electrode electrically connected to the first connection point, and comprising a topmost surface and a bottommost surface, wherein the topmost surface has a first end and a second end separated from the first end; and

a second electrode electrically connected to the second connection point,

wherein the first electrode comprises a solid conductive structure fully occupying a space between the topmost surface and the bottommost surface,

wherein the topmost surface comprises a curved surface, a beveled surface, or a combination thereof.

2. The light-emitting structure of claim 1 , further comprising a wavelength conversion layer, an encapsulation layer, or both thereof which are arranged on the semiconductor light-emitting element.

3. The light-emitting structure of claim 1 , further comprising a wavelength conversion layer which is conformably shaped to fit a portion of the semiconductor light-emitting element.

4. The light-emitting structure of claim 1 , further comprising a lens arranged on the semiconductor light-emitting element.

5. The light-emitting structure of claim 1 , further comprising a wavelength conversion layer which is arranged on the semiconductor light-emitting element, and has a top surface higher than the second end.

6. The light-emitting structure of claim 1 , wherein the first electrode and the second electrode are separated from each other by a groove.

7. The light-emitting structure of claim 6 , wherein first electrode has a portion higher than the groove.

8. The light-emitting structure of claim 6 , further comprising an insulating material filled in the groove.

9. The light-emitting structure of claim 6 , wherein the semiconductor light-emitting element is arranged above the groove.

10. The light-emitting structure of claim 1 , wherein the second end is higher than the first end in a cross sectional view.

11. The light-emitting structure of claim 1 , wherein the first electrode has an outer thickness, and an inner thickness which is smaller than the outer thickness.

12. The light-emitting structure of claim 1 , wherein the first electrode is a single solid structure.

13. The light-emitting structure of claim 1 , wherein the semiconductor light-emitting element is devoid of a growth substrate.

14. The light-emitting structure of claim 1 , wherein the first electrode comprises a portion not overlapping the semiconductor light-emitting element.

15. The light-emitting structure of claim 1 , wherein the first electrode comprises a first outermost end point, the second electrode comprises a second outermost end point, the first outermost end point and the second outermost end point are apart from each other by a distance which is greater than a maximum width of the semiconductor light-emitting element.

16. The light-emitting structure of claim 1 , further comprising a glue layer covering the semiconductor light-emitting element, the first electrode, and the second electrode.

17. The light-emitting structure of claim 1 , further comprising a glue layer arranged on first electrode and the second electrode in a configuration to expose a top surface of the semiconductor light-emitting element.

18. The light-emitting structure of claim 1 , further comprising a glue layer having a flat top surface which is substantially parallel to a top surface of the semiconductor light-emitting element.

19. The light-emitting structure of claim 1 , further comprising an insulating layer formed between the second electrode and the semiconductor light-emitting element.

20. The light-emitting structure of claim 1 , further comprising an insulating layer formed between the first electrode and the second electrode.