IP Library › Granted Patent US 9,806,114
Granted Patent B2
US 9,806,114 · App. 15/294,425 · Granted Oct 31, 2017

Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Inventors: Tomoharu Ogita (Kumamoto, JP); Atsushi Yamamoto (Kumamoto, JP); Keiji Tatani (Kumamoto, JP); Yoichi Ootsuka (Kumamoto, JP); Kiyotaka Tabuchi (Kanagawa, JP)
Assignee: Sony Corporation
H01L27/14621H01L27/14623H01L27/14627H01L27/14645H01L27/14685H04N5/378H04N9/045
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Quick Facts
Patent No.
US 9,806,114
App. No.
15/294,425
Granted
Oct 31, 2017
Kind
B2
Abstract

A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.

Claims (51)

1. An electronic apparatus, comprising:

an optical lens;

a signal processing circuit; and

an imaging device, including:

a plurality of photoelectric conversion elements;

a plurality of color filter components including a first color filter component and a second color filter component;

a light shielding portion; at least a part of the light shielding portion disposed between the first color filter component and the second color filter component in across-section view; and

a transparent film; at least a part of the transparent film disposed between the first color filter component and the light shielding portion in the cross-section view;

wherein a surface of the transparent film facing the first and second color filter components is nonplanar; and

wherein a thickness of the transparent film is less than a thickness of the light shielding portion;

wherein the optical lens focuses an incident light onto the imaging device; and

wherein the signal processing circuit generates a processed signal by processing an output from the imaging device.

2. The electronic apparatus according to claim 1 , wherein the plurality of photoelectric conversion elements includes a first photoelectric conversion element corresponding to the first color filter component, and a second photoelectric conversion element corresponding to the second color filter component.

3. The electronic apparatus according to claim 1 , wherein the first and second color filter components are planarized.

4. The electronic apparatus according to claim 1 , wherein the transparent film is provided between one surface of the light shielding portion and the color filter components.

5. The electronic apparatus according to claim 1 , further comprising:

an insulator film between the photoelectric conversion elements and the color filter components.

6. The electronic apparatus according to claim 1 , wherein an oxide film is provided between the transparent film and the light shielding portion.

7. The electronic apparatus according to claim 6 , wherein the oxide film is provided on one surface of the light shielding portion.

8. The electronic apparatus according to claim 1 , wherein the light shielding portion includes:

first light shielding portions formed on side portions of the color filter components; and

second light shielding portions formed at corner portions of the photoelectric conversion elements, wherein a distance from a front side of the photoelectric conversion elements to an end surface of the second light shielding portion toward a microlens is shorter than a distance from the front side of the photoelectric conversion elements to an end surface of the first light shielding portion toward the microlens.

9. The electronic apparatus according to claim 1 , wherein microlenses are disposed directly on corresponding ones of the color filter components.

10. The electronic apparatus according to claim 1 , further comprising:

a semiconductor substrate having a first side as a light incident side, and a second side opposite to the first side, wherein the semiconductor substrate forms the photoelectric conversion elements.

11. The electronic apparatus according to claim 10 , wherein the thickness of the semiconductor substrate is 3-5 μm.

12. The electronic apparatus according to claim 10 , further comprising:

a plurality of transistors disposed adjacent to the second side of the semiconductor substrate.

13. The electronic apparatus according to claim 12 , wherein the plurality of transistors comprises a transfer transistor associated with the photoelectric conversion element.

14. The electronic apparatus according to claim 12 , wherein the plurality of transistors comprises a reset transistor and an amplification transistor.

15. The electronic apparatus according to claim 14 , wherein the plurality of transistors further comprises a select transistor coupled to the amplification transistor.

16. The electronic apparatus according to claim 12 , further comprising:

a drive circuit configured to drive the plurality of transistors; and

a column signal processing circuit coupled to a signal line and configured to perform correlated double sampling of an electric signal.

17. The electronic apparatus according to claim 12 , wherein a wiring layer is disposed adjacent to the second side of the semiconductor substrate.

18. The electronic apparatus according to claim 17 , wherein the wiring layer comprises a signal line coupled to at least one transistor of the plurality of transistors.

19. The electronic apparatus according to claim 17 , further comprising:

a support substrate disposed on the wiring layer.

20. The electronic apparatus according to claim 1 , further comprising:

an element separation region disposed between adjacent ones of the photoelectric conversion elements.

21. The electronic apparatus according to claim 1 , further comprising:

a signal processing circuit configured to receive and process a digital signal.

22. The electronic apparatus according to claim 21 , further comprising:

a memory configured to receive and store a processed to digital signal from the signal processing circuit.

23. The electronic apparatus according to claim 1 , wherein the thickness of the color filter components is 100 nm to 1 μm.

24. The electronic apparatus according to claim 1 , wherein the color filter components include filters of at least two different colors selected from green, red, and blue.

25. The electronic apparatus according to claim 24 , wherein the color filter components include an ND filter.

26. The electronic apparatus according to claim 1 , wherein the transparent film comprises a nitride film.

27. The electronic apparatus according to claim 1 , wherein the light shielding portion is a material selected from the group consisting of aluminum and tungsten.

28. The electronic apparatus according to claim 1 , wherein the light shielding portion includes a material selected from the group consisting of carbon black and titanium black.

29. The electronic apparatus according to claim 1 , wherein the transparent film includes an adhesive film.

Priority Claims (2)
JP 2011-055631 · Mar 14, 2011 · national
JP 2012-044006 · Feb 29, 2012 · national
Continuity (6)
Continuation 15078146 · Mar 23, 2016
Continuation 14976905 · Dec 21, 2015
Continuation 14277383 · May 14, 2014
Continuation 13548900 · Jul 13, 2012
Continuation In Part 13362722 · Jan 31, 2012
Related Publication 20170033140A1 · Feb 2, 2017