IP Library Granted Patent US 11,054,744
Granted Patent B2
US 11,054,744 · App. 15/306,408 · Granted Jul 6, 2021

Photosensitive element, laminate, permanent mask resist, method for producing same, and method for producing semiconductor package

Inventors: Toshimasa Nagoshi (Tokyo, JP); Shigeo Tanaka (Tokyo, JP); Shizu Fukuzumi (Tokyo, JP)
Assignee: Showa Denko Materials Co., Ltd.
G03F7/09B32B7/02B32B27/38C09D123/06G03F7/004G03F7/027G03F7/029G03F7/16G03F7/2002G03F7/26H01L23/293H01L23/3142H01L23/49894H01L23/3128H01L2224/0401H01L2224/04042H01L2224/16235H01L2224/16237H01L2224/32225H01L2224/48091H01L2224/48229H01L2224/73204H01L2224/73265H01L2224/92125H01L2924/15311H01L2924/15313H05K3/287
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Quick Facts
Patent No.
US 11,054,744
App. No.
15/306,408
Granted
Jul 6, 2021
Kind
B2
Abstract

Provided is a photosensitive element including a support film, and a photosensitive layer provided on the support film and formed from a photosensitive resin composition, in which the surface roughness of the surface of the support film that is in contact with the photosensitive layer is 200 to 4,000 nm.

Claims (26)

1. A photosensitive element comprising a support film, and a photosensitive layer provided on the support film and formed from a photosensitive resin composition,

wherein in the support film, the surface roughness Ra of the surface that is in contact with the photosensitive layer is larger than 500 nm and 4000 nm or less,

wherein the photosensitive resin composition includes an acylphosphine-based compound and includes an inorganic filler material comprising at least one of barium sulfate and silica filler and having an average particle size of 1 μm or less at a proportion of 10% to 90% by mass based on the total amount of the photosensitive resin composition,

wherein the photosensitive resin composition does not contain a black pigment component, and

wherein the support film has a haze of 60% or higher.

2. The photosensitive element according to claim 1 , wherein the photosensitive resin composition includes a polyfunctional epoxy resin.

3. The photosensitive element according to claim 1 , wherein the photosensitive resin composition include a photoreactive compound having a (meth)acryloyl group.

4. The photosensitive element according to claim 1 , wherein the acylphosphine-based compound is 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide.

5. The photosensitive element according to claim 1 , wherein the photosensitive resin composition further includes a biphenyl aralkyl type epoxy resin.

6. The photosensitive element according to claim 1 , wherein the photosensitive resin composition further includes an epoxy-modified polybutadiene rubber derivative.

7. The photosensitive element according to claim 1 , wherein the photosensitive resin composition further comprises a blue pigment.

8. The photosensitive element according to claim 1 , wherein the support film has a haze of 70% or higher.

9. The photosensitive element according to claim 1 , wherein the inorganic filler material comprises barium sulfate.

10. The photosensitive element according to claim 1 , wherein the inorganic filler material comprises silica filler.

11. The photosensitive element according to claim 1 , wherein a content of the inorganic filler material is 20% to 80% by mass based on the total amount of the photosensitive resin composition.

12. The photosensitive element according to claim 1 , wherein a content of the inorganic filler material is 30% to 70% by mass based on the total amount of the photosensitive resin composition.

13. A method for forming a permanent mask resist, the method comprising:

a step of forming a photosensitive layer on a substrate using the photosensitive element according to claim 1 ;

a step of irradiating a predetermined part of the photosensitive layer with active light rays, and forming a photocured part; and

a step of removing regions other than the photocured part.

14. The method for forming a permanent mask resist according to claim 13 , further comprising a step of peeling a support film, after the step of forming the photosensitive layer and before the step of forming the photocured part.

15. The method for forming a permanent mask resist according to claim 13 , wherein in the step of forming the photocured part, the photosensitive layer is irradiated with active light rays using a direct drawing system, a projection exposure system, or an exposure system by which a negative mask is disposed such that the negative mask is not brought into direct touch with the photosensitive layer.

16. The method for forming a permanent mask resist according to claim 13 , further comprising a step of heating, after the step of removing regions other than the photocured part.

17. A permanent mask resist formed by the method for forming a permanent mask resist according to claim 13 .

18. A method for producing a semiconductor package, the method comprising a step of forming other members on a substrate on which a permanent mask resist has been formed by the method for forming a permanent mask resist according to claim 13 .

19. A laminate comprising a substrate; and a cured product obtained by curing the photosensitive layer of the photosensitive element according to claim 1 on the substrate.

Assignments (4)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Mar 8, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062992/0805 →
CHANGE OF NAME Recorded Jun 2, 2021
From: HITACHI CHEMICAL COMPANY, LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 056449/0652 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 26, 2017
From: NAGOSHI, TOSHIMASA; TANAKA, SHIGEO; FUKUZUMI, SHIZU
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 042818/0877 →
Priority Claims (1)
JP JP2014-091284 · Apr 25, 2014 · national
Continuity (1)
Related Publication 20170045817A1 · Feb 16, 2017