Method of fabricating III-nitride semiconductor dies
According to an embodiment of a method of fabricating III-Nitride semiconductor dies, the method includes: growing a III-Nitride body over a group IV substrate in a semiconductor wafer; forming at least one device layer over the III-Nitride body; etching grid array trenches in the III-Nitride body and in the group IV substrate; forming an edge trench around a perimeter of the semiconductor wafer, the grid array trenches terminating inside the group IV substrate; and forming separate dies by cutting the semiconductor wafer approximately along the grid array trenches.
1. A method, comprising:
growing a III-Nitride body over a group IV substrate in a semiconductor wafer;
forming at least one device layer over the III-Nitride body;
etching grid array trenches in the III-Nitride body and in the group IV substrate;
forming an edge trench around a perimeter of the semiconductor wafer, the grid array trenches terminating inside the group IV substrate; and
forming separate dies by cutting the semiconductor wafer approximately along the grid array trenches.
2. The method of claim 1 , further comprising:
forming the grid array trenches by means of a laser scribing technique.
3. The method of claim 1 , wherein the at least one device layer is a metal layer.
4. The method of claim 1 , wherein the at least one device layer is a dielectric layer.
5. The method of claim 1 , wherein the at least one device layer is a semiconductor layer.
6. The method of claim 1 , wherein the group IV substrate is selected from the group consisting of a silicon substrate, a sapphire substrate, a silicon carbide substrate, an SOI substrate, and a SIMOX substrate.
7. A method, comprising:
growing a group III-V body over a group IV substrate in a semiconductor wafer;
forming at least one device layer over the group III-V body;
etching first trenches in the group III-V body;
forming an edge trench around a perimeter of the semiconductor wafer, the edge trench terminating inside the group IV substrate; and
forming separate dies by cutting the semiconductor wafer approximately along the first trenches.
8. The method of claim 7 , further comprising etching the first trenches in the group IV substrate.
9. The method of claim 7 , wherein the at least one device layer comprises a metal layer.
10. The method of claim 7 , wherein the at least one device layer comprises a. dielectric layer.
11. The method of claim 7 , wherein the at least one device layer is a semiconductor layer.
12. The method of claim 7 , wherein the group IV substrate comprises silicon.
13. The method of claim 7 , wherein the group IV substrate comprises sapphire.
14. The method of claim 7 , wherein the group IV substrate comprises silicon carbide.
15. The method of claim 7 , wherein the group IV substrate comprises an SOI substrate.
16. The method of claim 7 , wherein the group IV substrate comprises a SIMOX substrate.