Method for producing nitride crystal and nitride crystal
A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 μm, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm 3 for the intended crystal growth.
1. An ammonothermally grown GaN crystal, wherein the crystal has a specific resistivity of from 4.09×10 −3 to 2.40×10 −2 Ωcm, the crystal is doped with oxygen such that a concentration of each dopant other than oxygen is smaller than a concentration of oxygen, the crystal comprises fluorine, and the crystal has a carrier concentration of from 8×10 17 to 2×10 19 cm −3 .
2. The GaN crystal according to claim 1 , wherein the crystal has a carrier concentration of from 1×10 18 to 2×10 19 cm −3 .
3. The GaN crystal according to claim 1 , wherein the fluorine concentration is at most 1×10 18 atoms/cm 3 .
4. The GaN crystal according to claim 1 , wherein Si concentration is at most 1.5×10 16 atoms/cm 3 .
5. The GaN crystal according to claim 1 , wherein Si concentration is at most 2×10 15 atoms/cm 3 .
6. An ammonothermally grown GaN crystal, wherein the crystal has a specific resistivity of from 4.09×10 −3 to 2.40×10 −2 Ωcm, the crystal is doped with oxygen such that a concentration of each dopant other than oxygen is smaller than a concentration of oxygen, the crystal comprises fluorine, and the concentration of oxygen falls within a range of from 1.1 to 10 times a carrier concentration of the crystal.
7. The GaN crystal according to claim 6 , wherein the fluorine concentration is at most 1×10 18 atoms/cm 3 .
8. The GaN crystal according to claim 6 , wherein Si concentration is at most 1.5×10 16 atoms/cm 3 .
9. The GaN crystal according to claim 6 , wherein Si concentration is at most 2×10 15 atoms/cm 3 .
10. A wafer comprising the GaN crystal according to claim 1 .
11. A device comprising the GaN crystal according to claim 1 .
12. The device according to claim 11 , wherein the device is a light-emitting element or an electronic element.
13. An ammonothermally grown GaN crystal, wherein the crystal has a specific resistivity of from 4.09×10 −3 to 2.40×10 −2 Ωcm, the crystal is doped with oxygen such that a concentration of each dopant other than oxygen is smaller than a concentration of oxygen, the crystal comprises fluorine, and the crystal has a carrier concentration of from 6.7×10 17 to 9.54×10 18 atom s/cm 3 .
14. The GaN crystal according to claim 13 , wherein the fluorine concentration is at most 1×10 18 atoms/cm 3 .
15. The GaN crystal according to claim 13 , wherein Si concentration is at most 1.5×10 16 atoms/cm 3 .
16. The GaN crystal according to claim 13 , wherein Si concentration is at most 2×10 15 atoms/cm 3 .
17. A wafer, comprising:
the GaN crystal of claim 6 .
18. A wafer, comprising:
the GaN crystal of claim 13 .
19. A device, comprising:
the GaN crystal of claim 6 .
20. The device according to claim 19 , wherein the device is a light-emitting element or an electronic element.
21. A device, comprising:
the GaN crystal of claim 13 .
22. The device according to claim 21 , wherein the device is a light-emitting element or an electronic element.