Semiconductor package with integrated semiconductor devices and passive component
According to one exemplary embodiment, a semiconductor package includes a substrate having lower and upper surfaces. The semiconductor package further includes at least one passive component coupled to first and second conductive pads on the upper surface of the substrate. The semiconductor package further includes at least one semiconductor device coupled to a first conductive pad on the lower surface of the substrate. The at least one semiconductor device has a first electrode for electrical and mechanical connection to a conductive pad external to the semiconductor package. The at least one semiconductor device can have a second electrode electrically and mechanically coupled to the first conductive pad on the lower surface of the substrate.
1. A semiconductor package, comprising:
a substrate that includes an upper surface and a lower surface;
a first conductive pad on said upper surface of said substrate;
an integrated circuit die coupled to said first conductive pad; and
a second conductive pad on said lower surface of said substrate, wherein said first conductive pad is coupled to said second conductive pad by a via conductor through said substrate;
wherein said first conductive pad is coupled to a field-effect transistor gate control electrode of said integrated circuit die.
2. The semiconductor package of claim 1 , wherein said first conductive pad is coupled to an input/output electrode of said integrated circuit die.
3. The semiconductor package of claim 1 , wherein said first conductive pad is coupled to a power supply electrode of said integrated circuit die.
4. The semiconductor package of claim 1 , wherein said first conductive pad is coupled to a ground electrode of said integrated circuit die.
5. The semiconductor package of claim 1 , wherein said integrated circuit die is coupled to said first conductive pad by a conductive adhesive.
6. The semiconductor package of claim 1 , wherein said integrated circuit die is configured as a controller for a voltage regulator.
7. A semiconductor package, comprising:
a substrate that includes an upper surface and a lower surface;
a first conductive pad and a second conductive pad on said upper surface of said substrate;
an integrated circuit die configured as a controller for a voltage regulator and coupled to said first conductive pad and said second conductive pad; and
a third conductive pad and a fourth conductive pad on said lower surface of said substrate, wherein said first conductive pad is coupled to said third conductive pad by a first via conductor through said substrate and said second conductive pad is coupled to said fourth conductive pad by a second via conductor through said substrate, and wherein solder material is deposited on said third and fourth conductive pads.
8. The semiconductor package of claim 7 , wherein said third conductive pad is coupled to a first input/output electrode of said integrated circuit die and said fourth conductive pad is coupled to a second input/output of said integrated circuit die.
9. The semiconductor package of claim 7 , wherein said third conductive pad is coupled to a power supply electrode of said integrated circuit die and said fourth conductive pad is coupled to a ground electrode of said integrated circuit die.
10. The semiconductor package of claim 7 , further comprising a first field-effect transistor and a second power field-effect transistor, and wherein said third conductive pad is coupled to a gate electrode of said first power field-effect transistor and said fourth conductive pad is coupled to a gate electrode of said second power field-effect transistor.
11. The semiconductor package of claim 7 , further comprising a passive component coupled to at least one conductive contact pad on said upper surface of said substrate, and wherein said at least one conductive contact pad is coupled to an input/output electrode of said integrated circuit die and said passive component is selected from one of a capacitor, a resistor, an inductor and a diode.
12. The semiconductor package of claim 7 , further comprising a passive component coupled to at least one conductive contact pad on said upper surface of said substrate, and wherein said at least one conductive contact pad is coupled to a fifth third conductive pad on said lower surface of said substrate by a third via conductor through said substrate and said passive component is selected from one of a capacitor, a resistor, an inductor and a diode.
13. The semiconductor package of claim 7 , further comprising a metallic body coupled to said upper surface of said substrate and configured to dissipate heat from said semiconductor package.
14. The semiconductor package of claim 7 , wherein said integrated circuit die is coupled to said first and second conductive pads by a conductive adhesive.
15. A semiconductor package, comprising:
a substrate having an upper surface and a lower surface;
a first conductive pad and a second conductive pad on said upper surface of said substrate;
an integrated circuit die configured as a controller for a voltage regulator and coupled to said first and second conductive pads on said upper surface of said substrate;
a third conductive pad and a fourth conductive pad on said lower surface of said substrate; and
a first power field-effect transistor and a second power field-effect transistor, wherein a gate electrode of said first power field-effect transistor is coupled to said third conductive pad by a first via conductor through said substrate and a gate electrode of said second power field-effect transistor is coupled to said fourth conductive pad by a second via conductor through said substrate.
16. The semiconductor package of claim 15 , further comprising a passive component coupled to at least one conductive contact pad on said upper surface of said substrate, and wherein said at least one conductive contact pad is coupled to an input/output electrode of said integrated circuit die and said passive component is selected from one of a capacitor, a resistor, an inductor and a diode.
17. The semiconductor package of claim 15 , further comprising a passive component coupled to at least one conductive contact pad on said upper surface of said substrate, and wherein said at least one conductive contact pad is coupled to a fifth conductive pad on said lower surface of said substrate by a third via conductor through said substrate and said passive component is selected from one of a capacitor, a resistor, an inductor and a diode.
18. The semiconductor package of claim 15 , further comprising a first power conductive pad and a first ground conductive pad on said upper surface of said substrate and a second power conductive pad and a second ground conductive pad on said lower surface of said substrate, wherein said first power conductive pad is coupled to a power supply electrode of said integrated circuit die and said first ground conductive pad is coupled to a ground electrode of said integrated circuit die, and wherein said first power conductive pad is coupled to said second power conductive pad by a first via conductor through said substrate and said first ground conductive pad is coupled to said second ground conductive pad by a second via conductor through said substrate.