Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins
A method of making a semiconductor device includes forming a fin in a substrate; depositing a first spacer material to form a first spacer around the fin; depositing a second spacer material to form a second spacer over the first spacer; recessing the first spacer and the second spacer; removing the first spacer; and performing an epitaxial growth process to form epitaxial growth on an end of the fin, along a sidewall of the fin, and adjacent to the fin.
1. A method of making a semiconductor device, the method comprising:
forming a fin in a substrate;
depositing a first spacer material to form a first spacer around the fin;
depositing a second spacer material to form a second spacer over the first spacer;
recessing the first spacer and the second spacer;
removing only the first spacer to leave a gap between the second spacer and the fin; and
performing an epitaxial growth process to form epitaxial growth on an end of the fin, along a sidewall of the fin, and adjacent to the fin, the epitaxial growth filling the gap between the second spacer and the fin.
2. The method of claim 1 , wherein the first spacer material is a dielectric spacer material.
3. The method of claim 2 , wherein the dielectric spacer material is silicon nitride, silicon oxide, silicon dioxide, aluminum oxide, or a combination thereof.
4. The method of claim 1 , wherein second spacer material is SiBN, SiCN, SiBCN, SiCBN, or any combination thereof.
5. The method of claim 1 , wherein the first spacer has a thickness in a range from about 2 to about 10 nanometers (nm).
6. The method of claim 1 , wherein the second spacer has a thickness in a range from about 3 to about 12 nm.
7. The method of claim 1 , wherein the first spacer and the second spacer are recessed by an amount in a range from about 20 to about 40 nm.
8. The method of claim 1 , wherein the epitaxial growth adjacent to the fin is a triangular-shaped growth or a diamond-shaped growth.