Semiconductor device, manufacturing method thereof, and electronic device
The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.
1. A semiconductor device comprising:
a first transistor;
a first insulating film over the first transistor;
a second insulating film over the first insulating film;
a second transistor over the second insulating film;
a first conductive film electrically connected to the first transistor; and
a second conductive film electrically connected to the first conductive film and the second transistor,
wherein the first conductive film penetrates the first insulating film,
wherein the second conductive film penetrates one of a source electrode and a drain electrode of the second transistor, a semiconductor film of the second transistor, and the second insulating film,
wherein a channel formation region of the first transistor comprises a single crystal semiconductor,
wherein a channel formation region of the second transistor comprises an oxide semiconductor, and
wherein a width of a bottom surface of the second conductive film is 5 nm or less.
2. The semiconductor device according to claim 1 , wherein the first conductive film is in contact with a source region or a drain region of the first transistor.
3. The semiconductor device according to claim 1 , wherein, assuming that a center of a top surface of a gate electrode of the first transistor is at an apex of an inverted square pyramid with a square and first to fourth isosceles triangles each having a vertex angle of 120° or less, a bottom surface of the semiconductor film fits inside the square.
4. The semiconductor device according to claim 3 ,
wherein the center of the top surface of the gate electrode of the first transistor and a center of a top surface of a gate electrode of the second transistor overlap with each other, and
wherein the center of the top surface of the gate electrode of the first transistor and a center of a top surface of the semiconductor film overlap with each other.
5. The semiconductor device according to claim 1 , further comprising a capacitor between the first transistor and the second transistor.
6. An electronic device comprising:
the semiconductor device according to claim 1 ; and
a display device, a microphone, a speaker, an operation key, a touch panel, or an antenna.
7. A semiconductor device comprising:
a first transistor;
a first insulating film over the first transistor;
a second insulating film over the first insulating film;
a second transistor over the second insulating film;
a first conductive film electrically connected to the first transistor; and
a second conductive film electrically connected to the first conductive film and the second transistor,
wherein the first conductive film penetrates the first insulating film,
wherein the second conductive film penetrates one of a source electrode and a drain electrode of the second transistor, a first semiconductor film of the second transistor, a second semiconductor film of the second transistor, and the second insulating film,
wherein a channel formation region of the first transistor comprises a single crystal semiconductor,
wherein a channel formation region of the second transistor comprises an oxide semiconductor, and
wherein a width of a bottom surface of the second conductive film is 5 nm or less.
8. The semiconductor device according to claim 7 , wherein the first conductive film is in contact with a source region or a drain region of the first transistor.
9. The semiconductor device according to claim 7 , further comprising a third semiconductor film over the second semiconductor film, the source electrode, and the drain electrode,
wherein an electron affinity of the second semiconductor film is higher than an electron affinity of the first semiconductor film and an electron affinity of the third semiconductor film.
10. The semiconductor device according to claim 7 , wherein, assuming that a center of a top surface of a gate electrode of the first transistor is at an apex of an inverted square pyramid with a square and first to fourth isosceles triangles each having a vertex angle of 120° or less, a bottom surface of the first semiconductor film fits inside the square.
11. The semiconductor device according to claim 10 ,
wherein the center of the top surface of the gate electrode of the first transistor and a center of a top surface of a gate electrode of the second transistor overlap with each other, and
wherein the center of the top surface of the gate electrode of the first transistor and a center of a top surface of the first semiconductor film overlap with each other.
12. The semiconductor device according to claim 7 , further comprising a capacitor between the first transistor and the second transistor.
13. An electronic device comprising:
the semiconductor device according to claim 7 ; and
a display device, a microphone, a speaker, an operation key, a touch panel, or an antenna.