Method of fabricating low CTE interposer without TSV structure
A microelectronic assembly including a dielectric region, a plurality of electrically conductive elements, an encapsulant, and a microelectronic element are provided. The encapsulant may have a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the dielectric region or the microelectronic element.
1. A microelectronic assembly comprising:
a dielectric region including a plurality of pads at a first surface, a plurality of contacts at a second surface opposite the first surface, and a back-end-of-line structure;
a plurality of electrically conductive elements coupled to the pads at the first surface of the dielectric region;
a first encapsulant extending above the first surface of the dielectric region, the first encapsulant filling spaces between the plurality of electrically conductive elements and having a surface overlying and facing away from the first surface of the dielectric region, wherein ends of the plurality of electrically conductive elements are at the surface of the first encapsulant; and
a plurality of microelectronic elements each having one or more contacts, wherein each of the contacts of the plurality of microelectronic elements are connected to one or more of the plurality of contacts at the second surface of the dielectric region through an electrically conductive material; and
a second encapsulant extending above the second surface of the dielectric region, the second encapsulant filling spaces between the plurality of microelectronic elements and the dielectric region.
2. The microelectronic assembly of claim 1 , wherein the back-end-of-line structure includes a plurality of dielectric layers and a plurality of wiring layers.
3. The microelectronic assembly of claim 2 , wherein the dielectric region further includes a redistribution layer.
4. The microelectronic assembly of claim 1 , wherein at least one of the plurality of microelectronic elements is a light-sensitive element.
5. The microelectronic assembly of claim 1 , wherein at least some of the plurality of microelectronic elements are interconnected through the dielectric region.
6. The microelectronic assembly of claim 1 , wherein the second encapsulant contacts a plurality of faces of at least one of the plurality of microelectronic elements.
7. The microelectronic assembly of claim 6 , wherein the second encapsulant completely encapsulates at least one of the plurality of microelectronic elements.
8. The microelectronic assembly of claim 1 , further comprising:
electrically conductive masses of bonding material connected to at least some of the plurality of electrically conductive elements.
9. The microelectronic assembly of claim 8 , further comprising:
a circuit panel having a plurality of contacts, wherein each of the contacts of the circuit panel are connected to one or more of the electrically conductive elements through the electrically conductive masses of bonding material; and
a third encapsulant extending above the surface of the first encapsulant, the third encapsulant filling spaces between the electrically conductive masses of bonding material.
10. A method of fabricating a microelectronic assembly comprising:
forming a dielectric region atop a support element, the dielectric region including a plurality of pads at a first surface, a plurality of contacts at a second surface opposite the first surface, and a back-end-of-line structure, wherein the second surface of the dielectric region contacts the support element;
forming a plurality of electrically conductive elements atop the pads at the first surface of the dielectric region;
forming a first encapsulant atop the first surface of the dielectric region such that the first encapsulant fills spaces between the plurality of electrically conductive elements; removing a portion of the support element;
removing a portion of the first encapsulant such that each of the plurality of electrically conductive elements is partially exposed;
placing a plurality of microelectronic elements each having one or more contacts atop the second surface of the dielectric region, wherein each of the contacts of the plurality of microelectronic elements are connected to one or more of the plurality of contacts at the second surface of the dielectric region through an electrically conductive material; and
forming a second encapsulant atop the second surface of the dielectric region such that the second encapsulant fills spaces between the plurality of microelectronic elements and the dielectric region.
11. The method of claim 10 :
wherein the back-end-of-line structure includes a plurality of dielectric layers and a plurality of wiring layers, and
wherein the dielectric region further includes a redistribution layer.
12. The method of claim 10 , wherein at least some of the plurality of microelectronic elements are interconnected through the dielectric region.
13. The method of claim 1 , further comprising:
removing a portion of the second encapsulant and at least one of the plurality of microelectronic elements.
14. The method of claim 1 , wherein the second encapsulant contacts a plurality of faces of at least one of the plurality of microelectronic elements.
15. The microelectronic assembly of claim 11 , wherein the second encapsulant has a lower CTE than the CTE of the first encapsulant.
16. A microelectronic assembly comprising:
a dielectric region including a plurality of pads at a first surface, a plurality of contacts at a second surface opposite the first surface, and a back-end-of-line structure;
a plurality of electrically conductive elements extending away from the first surface of the dielectric region and joined to the pads at the first surface of the dielectric region;
a first encapsulant disposed between and filling spaces between each of the plurality of electrically conductive elements, the encapsulant having a surface directly adjacent the first surface of the dielectric region;
a plurality of microelectronic elements each having one or more contacts, wherein each of the contacts of the plurality of microelectronic elements are joined to one or more of the plurality of contacts at the second surface of the dielectric region through an electrically conductive material; and
a second encapsulant extending above the second surface of the dielectric region, the second encapsulant filling spaces between the plurality of microelectronic elements and the dielectric region.
17. The microelectronic assembly of claim 1 , wherein each of the contacts of the plurality of microelectronic elements face toward the one or more of the plurality of contacts at the second surface of the dielectric region.