Semiconductor film, transistor, semiconductor device, display device, and electronic appliance
Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.
1. A semiconductor device comprising:
an insulating layer:
a first oxide semiconductor layer over and in direct contact with the insulating layer, the first oxide semiconductor layer comprising In, Ga, and Zn;
a second oxide semiconductor layer over and in direct contact with the first oxide semiconductor layer, the second oxide semiconductor layer comprising In, Ga, and Zn;
a third oxide semiconductor layer over and in direct contact with the second oxide semiconductor layer and the insulating layer, the third oxide semiconductor layer comprising In, Ga, and Zn;
a gate insulating layer over the third oxide semiconductor layer; and
a gate electrode over the gate insulating layer,
wherein an atomic ratio of In to Ga and Zn in the second oxide semiconductor layer satisfies In:Ga:Zn=x:y:z,
wherein, in an equilibrium diagram with vertices of the three elements of In, Ga, and Zn, the atomic ratio is within a range of an area surrounded by line segments that connect first coordinates (x:y:z=35:20:22), second coordinates (x:y:z=7:4:11), third coordinates (x:y:z=5:1:6), fourth coordinates (x:y:z=25:10:14), and the first coordinates, in this order, and
wherein the second oxide semiconductor layer includes a plurality of crystals.
2. The semiconductor device according to claim 1 , wherein the plurality of crystals are a plurality of nanocrystals.
3. The semiconductor device according to claim 1 , wherein the plurality of crystals are a plurality of c-axis aligned crystals.
4. A transistor comprising the semiconductor device according to claim 1 , wherein the second oxide semiconductor layer includes a channel region.
5. The semiconductor device according to claim 1 , wherein the third oxide semiconductor layer is in direct contact with a side surface of the first oxide semiconductor layer, and a side surface and a top surface of the second oxide semiconductor layer.
6. The semiconductor device according to claim 1 , wherein electron affinity of oxide included in the second oxide semiconductor layer is larger than electron affinity of oxide included in the first oxide semiconductor layer and electron affinity of oxide included in the third oxide semiconductor layer.
7. A semiconductor device comprising:
an insulating layer:
a first oxide semiconductor layer over and in direct contact with the insulating layer, the first oxide semiconductor layer comprising In, an element M and Zn;
a second oxide semiconductor layer over and in direct contact with the first oxide semiconductor layer, the second oxide semiconductor layer comprising In, the element M, and Zn;
a third oxide semiconductor layer over and in direct contact with the second oxide semiconductor layer and the insulating layer, the third oxide semiconductor layer comprising In, the element M, and Zn;
a gate insulating layer over the third oxide semiconductor layer; and
a gate electrode over the gate insulating layer,
wherein the element M is at least one of aluminum, gallium, yttrium, and tin,
wherein an atomic ratio of In to the element M and Zn in the second oxide semiconductor layer satisfies In:M:Zn=x:y:z,
wherein, in an equilibrium diagram with vertices of the three elements of In, the element M, and Zn, the atomic ratio is within a range of an area surrounded by line segments that connect first coordinates (x:y:z=35:20:22), second coordinates (x:y:z=7:4:11), third coordinates (x:y:z=5:1:6), fourth coordinates (x:y:z=25:10:14), and the first coordinates, in this order, and
wherein the second oxide semiconductor layer includes a plurality of crystals.
8. The semiconductor device according to claim 7 , wherein the plurality of crystals are a plurality of nanocrystals.
9. The semiconductor device according to claim 7 , wherein the plurality of crystals are a plurality of c-axis aligned crystals.
10. A transistor comprising the semiconductor device according to claim 7 , wherein the second oxide semiconductor layer includes a channel region.
11. The semiconductor device according to claim 7 , wherein the third oxide semiconductor layer is in direct contact with a side surface of the first oxide semiconductor layer, and a side surface and a top surface of the second oxide semiconductor layer.
12. The semiconductor device according to claim 7 , wherein electron affinity of oxide included in the second oxide semiconductor layer is larger than electron affinity of oxide included in the first oxide semiconductor layer and electron affinity of oxide included in the third oxide semiconductor layer.
13. A semiconductor device comprising:
an insulating layer:
a first oxide semiconductor layer over and in direct contact with the insulating layer, the first oxide semiconductor layer comprising In, Ga, and Zn;
a second oxide semiconductor layer over and in direct contact with the first oxide semiconductor layer, the second oxide semiconductor layer comprising In, Ga, and Zn;
a third oxide semiconductor layer over and in direct contact with the second oxide semiconductor layer and the insulating layer, the third oxide semiconductor layer comprising In, Ga, and Zn;
a gate insulating layer over the third oxide semiconductor layer; and
a gate electrode over the gate insulating layer,
wherein a first atomic ratio of In to Ga and Zn in the second oxide semiconductor layer satisfies In:Ga:Zn=x:y:z,
wherein, in an equilibrium diagram with vertices of the three elements of In, Ga, and Zn, the first atomic ratio is within a range of an area surrounded by line segments that connect first coordinates (x:y:z=35:20:22), second coordinates (x:y:z=7:4:11), third coordinates (x:y:z=5:1:6), fourth coordinates (x:y:z=25:10:14), and the first coordinates, in this order,
wherein the second oxide semiconductor layer includes a plurality of crystals,
wherein a second atomic ratio of In to Ga and Zn of the third oxide semiconductor layer satisfies In:Ga:Zn=x a :y a :z a , and
wherein, in an equilibrium diagram with vertices of the three elements of In, Ga, and Zn, the second atomic ratio is within a range of an area surrounded by line segments that connect first coordinates (x a :y a :z a =35:20:22), second coordinates (x a :y a :z a =7:4:11), third coordinates (x a :y a :z a =5:1:6), fourth coordinates (x a :y a :z a =25:10:14), and the first coordinates, in this order.
14. The semiconductor device according to claim 13 , wherein the plurality of crystals are a plurality of nanocrystals.
15. The semiconductor device according to claim 13 , wherein the plurality of crystals are a plurality of c-axis aligned crystals.
16. A transistor comprising the semiconductor device according to claim 13 , wherein the second oxide semiconductor layer includes a channel region.
17. The semiconductor device according to claim 13 , wherein the third oxide semiconductor layer is in direct contact with a side surface of the first oxide semiconductor layer, and a side surface and a top surface of the second oxide semiconductor layer.
18. The semiconductor device according to claim 13 , wherein electron affinity of oxide included in the second oxide semiconductor layer is larger than electron affinity of oxide included in the first oxide semiconductor layer and electron affinity of oxide included in the third oxide semiconductor layer.
19. A semiconductor device comprising:
an insulating layer:
a first oxide semiconductor layer over and in direct contact with the insulating layer, the first oxide semiconductor layer comprising In, an element M, and Zn;
a second oxide semiconductor layer over and in direct contact with the first oxide semiconductor layer, the second oxide semiconductor layer comprising In, the element M, and Zn;
a third oxide semiconductor layer over and in direct contact with the second oxide semiconductor layer and the insulating layer, the third oxide semiconductor layer comprising In, the element M, and Zn;
a gate insulating layer over the third oxide semiconductor layer; and
a gate electrode over the gate insulating layer,
wherein a first atomic ratio of In to the element M and Zn in the second oxide semiconductor layer satisfies In:M:Zn=x:y:z,
wherein, in an equilibrium diagram with vertices of the three elements of In, Ga, and Zn, the first atomic ratio is within a range of an area surrounded by line segments that connect first coordinates (x:y:z=35:20:22), second coordinates (x:y:z=7:4:11), third coordinates (x:y:z=5:1:6), fourth coordinates (x:y:z=25:10:14), and the first coordinates, in this order,
wherein the second oxide semiconductor layer includes a plurality of crystals,
wherein a second atomic ratio of In to the element M and Zn of the third oxide semiconductor layer satisfies In:M:Zn=x a :y a :z a , and
wherein, in an equilibrium diagram with vertices of the three elements of In, M, and Zn, the second atomic ratio is within a range of an area surrounded by line segments that connect first coordinates (x a :y a :z a =35:20:22), second coordinates (x a :y a :z a =7:4:11), third coordinates (x a :y a :z a =5:1:6), fourth coordinates (x a :y a :z a =25:10:14), and the first coordinates, in this order.
20. The semiconductor device according to claim 19 , wherein the plurality of crystals are a plurality of nanocrystals.
21. The semiconductor device according to claim 19 , wherein the plurality of crystals are a plurality of c-axis aligned crystals.
22. A transistor comprising the semiconductor device according to claim 19 , wherein the second oxide semiconductor layer includes a channel region.
23. The semiconductor device according to claim 19 , wherein the third oxide semiconductor layer is in direct contact with a side surface of the first oxide semiconductor layer, and a side surface and a top surface of the second oxide semiconductor layer.
24. The semiconductor device according to claim 19 , wherein electron affinity of oxide included in the second oxide semiconductor layer is larger than electron affinity of oxide included in the first oxide semiconductor layer and electron affinity of oxide included in the third oxide semiconductor layer.