Composite and transistor
View Patent ↗A novel material is provided. A composite oxide semiconductor in which a first region and a plurality of second regions are mixed is provided. Note that the first region contains at least indium, an element M (the element M is one or more of Al, Ga, Y, and Sn), and zinc, and the plurality of second regions contain indium and zinc. Since the plurality of second regions have a higher concentration of indium than the first region, the plurality of second regions have a higher conductivity than the first region. An end portion of one of the plurality of second regions overlaps with an end portion of another one of the plurality of second regions. The plurality of second regions are three-dimensionally surrounded with the first region.
1. A semiconductor device comprising:
a transistor comprising:
a gate electrode;
a gate insulating film; and
an oxide semiconductor layer comprising indium, an element M, and zinc,
wherein the element M is one or more of Al, Ga, Y and Sn,
wherein the oxide semiconductor layer comprises a first region and a second region and a third region,
wherein an atomic ratio of In to the element M in the second region is greater than an atomic ratio of In to the element M in the first region,
wherein an atomic ratio of In to the element M in the third region is greater than the atomic ratio of In to the element M in the first region, and
wherein the second region and the third region are surrounded with the first region.
2. The semiconductor device according to claim 1 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) is 5:1:6 in the oxide semiconductor layer.
3. The semiconductor device according to claim 1 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in the first region is 4:2:3.
4. The semiconductor device according to claim 1 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in the second region is 2:0:3.
5. The semiconductor device according to claim 1 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) is 4:2:3 in the oxide semiconductor layer.
6. The semiconductor device according to claim 1 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in the first region is 1:1:1.
7. The semiconductor device according to claim 1 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in the second region is 2:0:1.
8. The semiconductor device according to claim 1 ,
wherein the first region is non-single-crystal, and
wherein the second region is non-single-crystal.
9. The semiconductor device according to claim 1 , wherein the second region has a higher conductivity than the first region.
10. The semiconductor device according to claim 1 , wherein the atomic ratio of In to the element M in the second region is 1.1 to 10 times as high as the atomic ratio of In to the element M in the first region.
11. The semiconductor device according to claim 1 , wherein the atomic ratio of In to the element M in the second region is 2 to 10 times as high as the atomic ratio of In to the element M in the first region.
12. A semiconductor device comprising:
a transistor comprising:
a gate electrode;
a gate insulating film; and
an oxide semiconductor layer comprising indium, an element M, and zinc,
wherein the element M is one or more of Al, Ga, Y and Sn,
wherein the oxide semiconductor layer comprises a first region and a plurality of second regions,
wherein an atomic ratio of In to the element M in each of the second regions is greater than an atomic ratio of In to the element M in the first region,
wherein the first region and the plurality of the second regions are mixed, and
wherein the plurality of the second regions are enclosed by the first region.
13. The semiconductor device according to claim 12 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) is 5:1:6 in the oxide semiconductor layer.
14. The semiconductor device according to claim 12 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in the first region is 4:2:3.
15. The semiconductor device according to claim 12 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in one of the plurality of second regions is 2:0:3.
16. The semiconductor device according to claim 12 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) is 4:2:3 in the oxide semiconductor layer.
17. The semiconductor device according to claim 12 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in the first region is 1:1:1.
18. The semiconductor device according to claim 12 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in one of the plurality of second regions is 2:0:1.
19. The semiconductor device according to claim 12 ,
wherein the first region is non-single-crystal, and
wherein each of the plurality of second regions is non-single-crystal.
20. The semiconductor device according to claim 12 , wherein each of the plurality of second regions has a higher conductivity than the first region.
21. The semiconductor device according to claim 12 , wherein the atomic ratio of In to the element M in each of the plurality of second regions is 1.1 to 10 times as high as the atomic ratio of In to the element M in the first region.
22. The semiconductor device according to claim 12 , wherein the atomic ratio of In to the element M in each of the plurality of second regions is 2 to 10 times as high as the atomic ratio of In to the element M in the first region.
23. A semiconductor device comprising:
a transistor comprising:
a gate electrode;
a gate insulating film; and
an oxide semiconductor layer comprising indium, an element M, and zinc,
wherein the element M is one or more of Al, Ga, Y and Sn,
wherein the oxide semiconductor layer comprises a first region and a plurality of second regions,
wherein an atomic ratio of In to the element M in each of the second regions is greater than an atomic ratio of In to the element M in the first region,
wherein the first region and the plurality of the second regions are mixed,
wherein one of the second regions and another of the second regions are connected, and
wherein all the plurality of the second regions are not connected.
24. The semiconductor device according to claim 23 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) is 5:1:6 in the oxide semiconductor layer.
25. The semiconductor device according to claim 23 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in the first region is 4:2:3.
26. The semiconductor device according to claim 23 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in one of the plurality of second regions is 2:0:3.
27. The semiconductor device according to claim 23 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) is 4:2:3 in the oxide semiconductor layer.
28. The semiconductor device according to claim 23 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in the first region is 1:1:1.
29. The semiconductor device according to claim 23 , wherein an atomic ratio of indium to the element M and zinc (In:M:Zn) in one of the plurality of second regions is 2:0:1.
30. The semiconductor device according to claim 23 ,
wherein the first region is non-single-crystal, and
wherein each of the plurality of second regions is non-single-crystal.
31. The semiconductor device according to claim 23 , wherein each of the plurality of second regions has a higher conductivity than the first region.
32. The semiconductor device according to claim 23 , wherein the atomic ratio of In to the element M in each of the plurality of second regions is 1.1 to 10 times as high as the atomic ratio of In to the element M in the first region.
33. The semiconductor device according to claim 23 , wherein the atomic ratio of In to the element M in each of the plurality of second regions is 2 to 10 times as high as the atomic ratio of In to the element M in the first region.