IP Library › Granted Patent US 10,340,881
Granted Patent B2
US 10,340,881 · App. 15/423,979 · Granted Jul 2, 2019

Bonded substrate, surface acoustic wave element, surface acoustic wave device, and method of manufacturing bonded substrate

Inventors: Kouhei Kurimoto (Hokkaido, JP); Kazuhito Kishida (Tokyo, JP); Rinzo Kayano (Hokkaido, JP); Jun Mizuno (Tokyo, JP); Shoji Kakio (Yamanashi, JP)
Assignees: THE JAPAN STEEL WORKS, LTD.; WASEDA UNIVERSITY; UNIVERSITY OF YAMANASHI
H03H9/02551H03H3/08H03H9/02559H03H9/25H03H9/64
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Quick Facts
Patent No.
US 10,340,881
App. No.
15/423,979
Granted
Jul 2, 2019
Kind
B2
Abstract

There is provided a bonded substrate including: a quartz substrate; and a piezoelectric substrate which is bonded on the quartz substrate and on which a surface acoustic wave propagates, wherein the quartz substrate and the piezoelectric substrate are bonded at a bonding interface through covalent bonding, and a surface acoustic wave element having a higher phase velocity and a higher electromechanical coupling factor than conventional one is obtained by disposing an interdigital electrode on a principal surface of the piezoelectric substrate.

Claims (11)

1. A bonded substrate comprising: a quartz substrate; and a piezoelectric substrate which is bonded on or above the quartz substrate and on which a surface acoustic wave propagates, wherein the quartz substrate and the piezoelectric substrate are covalently bonded at an interface.

2. The bonded substrate according to claim 1 , wherein the piezoelectric substrate is for exciting a longitudinal-type leaky surface acoustic wave.

3. The bonded substrate according to claim 1 , further comprising an amorphous layer between the quartz substrate and the piezoelectric substrate, wherein the amorphous layer is covalently bonded to both of the quartz substrate and the piezoelectric substrate.

4. The bonded substrate according to claim 3 , wherein the amorphous layer has 100 nm or less of thickness.

5. The bonded substrate according to claim 3 , wherein the amorphous layer comprises silicon dioxide or aluminum oxide.

6. The bonded substrate according to claim 1 , wherein a thickness of the piezoelectric substrate corresponds to 0.05 to 10 wavelengths with respect to a wavelength of the surface acoustic wave.

7. The bonded substrate according to claim 1 , wherein the quartz substrate has 150 to 500 μm of thickness.

8. The bonded substrate according to claim 1 , wherein the piezoelectric substrate is composed of lithium tantalate or lithium niobate.

9. The bonded substrate according to claim 8 , wherein the piezoelectric substrate is 36° to 45° Y-cut lithium tantalate, X-cut lithium tantalate, 128° Y-cut lithium niobate, or X-cut lithium niobate.

10. A surface acoustic wave element comprising at least one interdigital electrode on a principal surface of the piezoelectric substrate in the bonded substrate according to claim 1 .

11. A surface acoustic wave device, wherein the surface acoustic wave element according to claim 10 is sealed in a package.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2020
From: UNIVERSITY OF YAMANASHI; WASEDA UNIVERSITY
To: THE JAPAN STEEL WORKS, LTD.
Reel/Frame 051541/0271 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2017
From: KURIMOTO, KOUHEI; KISHIDA, KAZUHITO; KAYANO, RINZO; MIZUNO, JUN; KAKIO, SHOJI
To: THE JAPAN STEEL WORKS, LTD.; WASEDA UNIVERSITY; UNIVERSITY OF YAMANASHI
Reel/Frame 041167/0601 →
Priority Claims (1)
JP 2016-157122 · Aug 10, 2016 · national
Continuity (1)
Related Publication 20180048282A1 · Feb 15, 2018