Organic light-emitting display apparatus and fabrication method thereof
An organic light-emitting display apparatus includes a display substrate and a thin film encapsulation layer on the display substrate. The display substrate includes at least one hole, a thin film transistor, a light-emitting portion electrically connected to the thin film transistor, and a plurality of insulating layers. The light-emitting portion includes a first electrode, an intermediate layer, and a second electrode. The display substrate includes an active area, an inactive area between the active area and the hole, and a plurality of insulating dams. Each insulating dam includes at least one layer. The inactive area includes a first area different from a laser-etched area and a second laser-etched area.
1. An organic light-emitting display apparatus, comprising:
a display substrate having at least one hole and including:
a thin film transistor;
a light-emitting portion electrically connected to the thin film transistor, the light-emitting portion including a first electrode, an intermediate layer, and a second electrode; and
a plurality of insulating layers; and
a thin film encapsulation layer on the display substrate, wherein the display substrate includes an active area, an inactive area between the active area and the hole, and a plurality of insulating dams, wherein each of the insulating dams includes at least one layer, and wherein the inactive area includes a first area different from a laser-etched area and a second laser-etched area.
2. The apparatus as claimed in claim 1 , wherein the insulating dams are spaced apart and surround the active area.
3. The apparatus as claimed in claim 2 , wherein:
the first area includes the insulating dams,
the intermediate layer is on an outer surface of each of the insulating dams,
the second laser-etched area is between neighboring insulating dams and an outermost area of the insulating dams, and
the second laser-etched area excludes the intermediate layer.
4. The apparatus as claimed in claim 3 , wherein the second electrode is on the intermediate layer that is on the outer surface of each of the insulating dams.
5. The apparatus as claimed in claim 2 , wherein:
the first area includes the insulating dams and an area between neighboring insulating dams,
the intermediate layer is on an outer surface of each of the insulating dams and between the neighboring insulating dams,
the second laser-etched area includes an outermost area of the insulating dams, and
the second laser-etched area excludes the intermediate layer.
6. The apparatus as claimed in claim 5 , wherein the intermediate layers on the outer surfaces of the insulating dams and between the neighboring insulating dams are connected to each other.
7. The apparatus as claimed in claim 5 , wherein the second electrode is on the intermediate layer on the outer surface of each of the insulating dams and between the neighboring insulating dams.
8. The apparatus as claimed in claim 2 , wherein:
the intermediate layer includes an emissive layer at a sub-pixel and a common layer across the active area and the inactive area, and
the common layer is separately arranged in the active and inactive areas.
9. The apparatus as claimed in claim 2 , wherein:
the second electrode is across the active area and the inactive area, and
portions of the second electrode are separately arranged in the active area and the inactive area.
10. The apparatus as claimed in claim 2 , wherein:
an insulating layer of the plurality of insulating layers extends across the active area and the inactive area and includes at least one layer stacked in a direction crossing the display substrate, and
the insulating dams are on the insulating layer of the plurality of insulating layers.
11. The apparatus as claimed in claim 10 , wherein:
the thin film transistor includes a semiconductor active layer and a gate electrode, a source electrode, and a drain electrode,
the insulating layer is between the semiconductor active layer and at least one of the gate electrode, the source electrode, or the drain electrode, and
the insulating dams include at least one of a passivation layer covering the thin film transistor, a pixel defining layer defining a sub-pixel including the light-emitting portion, and a spacer on the second electrode.
12. The apparatus as claimed in claim 10 , further comprising:
a plurality of laser shield layers on at least one insulating layer corresponding to the second laser-etched area in the inactive area.
13. The apparatus as claimed in claim 12 , wherein:
the laser shield layers are on different insulating layers, and
at least part of the laser shield layers overlap one another.
14. The apparatus as claimed in claim 12 , wherein each of the laser shield layers includes a reflective layer.
15. The apparatus as claimed in claim 1 , wherein the hole area is in and surrounded by the active area.