Fan-out wafer-level packaging using metal foil lamination
Fan-out wafer-level packaging (WLP) using metal foil lamination is provided. An example wafer-level package incorporates a metal foil, such as copper (Cu), to relocate bonding pads in lieu of a conventional deposited or plated RDL. A polymer such as an epoxy layer adheres the metal foil to the package creating conductive contacts between the metal foil and metal pillars of a die. The metal foil may be patterned at different stages of a fabrication process. An example wafer-level package with metal foil provides relatively inexpensive electroplating-free traces that replace expensive RDL processes. Example techniques can reduce interfacial stress at fan-out areas to enhance package reliability, and enable smaller chips to be used. The metal foil provides improved fidelity of high frequency signals. The metal foil can be bonded to metallic pillar bumps before molding, resulting in less impact on the mold material.
1. A method, comprising:
adhering a metal foil to a carrier with an adhesive;
covering the metal foil with a layer of polymer;
creating holes in the polymer layer for mounting metal pillars or pads of an integrated circuit die to the metal foil;
connecting the metal pillars or pads to the metal foil;
removing the carrier and the adhesive to reveal the metal foil;
etching the metal foil into redistribution traces;
applying a compliant polymer layer over the metal foil; and
exposing parts of the metal foil through the compliant polymer layer to be used as conductive contacts.
2. The method of claim 1 , wherein etching the metal foil into redistribution traces is performed before covering the metal foil with the layer of polymer.
3. The method of claim 1 , wherein applying the compliant polymer layer comprises filling a gap between vertical sidewalls of the holes and vertical sidewalls of the metal pillars or pads with a compliant polymer of the compliant polymer layer; and
wherein each hole comprises a circular, oval, square, or rectangular cross-section.
4. The method of claim 1 , further comprising connecting conductive interconnects to the conductive contacts, wherein the conductive interconnects are selected from the group consisting of solder spheres, flip chip solder bumps, BGA solder balls, tall columnar solder connections, wires, conductive vias, and at least one metallic foil.
5. The method of claim 1 , further comprising encapsulating the integrated circuit die and the polymer layer with a mold material.
6. The method of claim 1 , wherein connecting the metal pillars or pads to the metal foil further comprises a process selected from the group consisting of annealing a conductive bond between the metal pillars or pads and the metal foil, attaching the metal pillars or pads to the metal foil with a solder-based reflow process, and attaching the metal pillar or pads to the metal foil with a thermal compression bond.
7. The method of claim 1 , further comprising creating a ring of mechanical stress buffer around at least a die pad of each metal pillar, wherein the mechanical stress buffer comprises a ring of compliant polymer extending between approximately 0.1-50.0 micrometers (μm) radially outward from each die pad or each metal pillar.
8. The method of claim 1 , further comprising:
attaching a first side of the metal foil to the carrier;
patterning a second side of the metal foil;
coating a B-stage epoxy film as the layer of polymer over the second side of the patterned metal foil;
applying a lithography to the B-stage epoxy film to create a patterned B-stage epoxy film with holes exposing the second side of the metal foil in a pattern approximating the metal pillars or pads;
adhering the integrated circuit die to the patterned B-stage epoxy film;
conductively contacting the metal pillars or pads to the second side of the metal foil through the holes;
encapsulating the integrated circuit die and the B-stage epoxy film with a mold material;
removing the carrier and the adhesive to reveal the first side of the metal foil; and
coating the compliant polymer layer on at least the first side of the patterned metal foil.
9. The method of claim 1 , wherein the compliant polymer layer comprises a polymer selected from the group consisting of a polyimide, a polymer with a Young's Modulus or tensile modulus less than 4.0 GPa (gigapascals), and a dielectric with a Young's Modulus or tensile modulus less than 4.0 GPa.
10. The method of claim 1 , further comprising:
attaching a first side of the metal foil to the carrier;
coating a B-stage epoxy film as the layer of polymer over the second side of the patterned metal foil;
applying a lithography to the B-stage epoxy film to create a patterned B-stage epoxy film with holes exposing the second side of the metal foil in a pattern approximating the metal pillars or pads;
adhering the integrated circuit die to the patterned B-stage epoxy film;
conductively contacting the metal pillars or pads to the second side of the metal foil through the holes;
encapsulating the integrated circuit die and the patterned B-stage epoxy film with the mold material;
removing the carrier and the adhesive to reveal the first side of the metal foil;
after removing the carrier, patterning the first side of the metal foil; and
coating the compliant polymer layer on at least the first side of the patterned metal foil.
11. The method of claim 1 , further comprising:
adhering a backside of the integrated circuit die to a carrier;
molding around the integrated circuit die and over the carrier using film assist molding to encase the integrated circuit die over the carrier with a mold material while leaving a protrusion of the metal pillars or pads above the mold material;
applying a polymer layer over the protrusions and the mold material;
grinding the polymer layer to expose the metal pillars or pads;
applying a first side of the metal foil onto the polymer layer, the metal foil making conductive contact with the metal pillars or pads;
patterning the metal foil;
applying a compliant polymer layer over the patterned metal foil;
applying a lithography process to the compliant polymer layer to expose a pattern of the conductive contacts on a second side of the metal foil, the pattern of conductive contacts comprising bonding pads; and
creating conductive bumps as interconnects on the exposed bonding pads.
12. The method of claim 1 , further comprising folding a continuous sheet of the metal foil onto a perpendicular surface in a wafer-level package or onto an additional parallel surface in the wafer-level package.