Combined source and base contact for a field effect transistor
The present disclosure relates to semiconductor devices. The teachings thereof may be embodied in metal oxide semiconductor field effect transistors (MOSFET) and methods for their manufacture. Some embodiments may include: depositing a base within an epitaxial layer; implanting a source implant extending into the base, wherein the epitaxial layer, the base, and the source implant form a continuous plane surface; depositing an insulating layer on the continuous plane surface forming a gate in contact with both the epitaxial layer and the base; opening a contact groove through the insulating layer to expose a central portion of the source implant; depositing a layer of photoresist on top of the insulating layer above exposed portions of the source implant; patterning a set of stripes in the photoresist, each stripe perpendicular to the contact groove; etching the set of stripes with an etch chemistry selective to the insulating layer; and filling the contact groove with a conductive material creating a base-source contact groove reaching through the insulating layer to the surface of the source implant and comprising a plurality of sections spaced apart from each other reaching through the source implant into the base.
1. A method for manufacturing a field effect transistor with a transistor cell, the method comprising:
depositing a base within an epitaxial layer;
implanting a source implant extending into the base;
wherein the epitaxial layer, the base, and the source implant form a continuous plane surface;
depositing an insulating layer on the continuous plane surface;
forming a gate in contact with both the epitaxial layer and the base;
opening a contact groove through the insulating layer to expose a central portion of the source implant;
depositing a layer of photoresist on top of the insulating layer above exposed portions of the source implant, wherein the layer of photoresist leaves the contact groove open as well as a surface portion of the source implant immediately adjacent the contact groove;
patterning a set of stripes in the photoresist, each stripe perpendicular to the contact groove;
etching the set of stripes with an etch chemistry selective to the insulating layer; and
filling the contact groove with a conductive material creating a base-source contact groove reaching through the insulating layer to the surface of the source implant having surface area in contact with the surface of the source implant as well as side walls in contact with the source implant and comprising a plurality of sections spaced apart from each other reaching through the source implant into the base.
2. A method according to claim 1 , wherein each of the plurality of sections is equally spaced apart.
3. A method according to claim 1 , wherein the conducting material is metal.
4. A method according to claim 1 , wherein the plurality of sections comprise vias reaching through the source implant into the base.
5. A method according to claim 1 , wherein the plurality of sections each have a rectangular footprint.
6. A method according to claim 1 , wherein the plurality of sections each have a circular footprint.
7. A method according to claim 1 , wherein the base comprises a p-type semiconductor and the source implant comprises an n-type semiconductor.
8. A method according to claim 1 , wherein the field effect transistor comprises a power metal oxide semiconductor field effect transistor.