Ultrathin solid state dies and methods of manufacturing the same
View Patent ↗Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.
1. A solid state transducer (SST) die, comprising:
a support structure comprising a support material and a growth surface suitable for growing epitaxial semiconductor materials, wherein the support structure has an opening;
an SST structure configured to produce radiation in the selected spectrum, the SST structure having a first semiconductor material grown on the growth surface of the support structure, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material;
a first contact electrically coupled with the first semiconductor material, wherein the first contact is aligned with the support structure; and
a second contact electrically coupled with the second semiconductor material, wherein the second contact is aligned with the opening in the support structure such that radiation in the selected spectrum passes through the opening, wherein the support material comprises silicon on poly-aluminum nitride and the growth surface comprises silicon (1,1,1).
2. A solid state transducer (SST) die, comprising:
a support structure comprising a support material and a growth surface suitable for growing epitaxial semiconductor materials, wherein the support structure has an opening;
an SST structure configured to produce radiation in the selected spectrum, the SST structure having a first semiconductor material grown on the growth surface of the support structure, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material;
a first contact electrically coupled with the first semiconductor material, wherein the first contact is aligned with the support structure;
a second contact electrically coupled with the second semiconductor material, wherein the second contact is aligned with the opening in the support structure such that radiation in the selected spectrum passes through the opening;
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact; and
a conductive material on the insulating material.
3. The SST die of claim 2 wherein the support structure comprises an engineered substrate in which the support material has a low transmissiveness to radiation in a selected spectrum and the growth surface comprises an epitaxial semiconductor growth material.
4. The SST die of claim 2 wherein both the first contact and the second contact are configured to be electrically coupled to a power source from the same side of the SST die.
5. The SST die of claim 2 wherein:
the SST structure further includes a first side and a second side opposite the first side;
the support structure is at the first side of the SST structure;
the support structure has a thickness between about 20 microns and about 50 microns; and
the SST die further includes a conductive material, a portion of which is adjacent to the second side of the SST structure, wherein the portion of the conductive material adjacent to the second side has a thickness between about 10 microns and about 15 microns.
6. The SST die of claim 2 wherein:
the SST structure further includes a plurality of emitters, the individual emitters having the first semiconductor material in common, wherein the individual emitters have a second semiconductor element spaced apart from the first semiconductor material and an active element directly between the second semiconductor element and the first semiconductor material;
the support structure further includes a plurality of segments that intersect to form a plurality of openings that individually expose a portion of a surface of the first semiconductor material; and
the plurality of openings are vertically aligned with the plurality of emitters.
7. A solid state transducer (SST) die, comprising:
a support structure comprising a support material and a growth surface suitable for growing epitaxial semiconductor materials, wherein the support structure has an opening;
an SST structure configured to produce radiation in the selected spectrum, the SST structure having a first semiconductor material grown on the growth surface of the support structure, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material;
a first contact electrically coupled with the first semiconductor material, wherein the first contact is aligned with the support structure; and a second contact electrically coupled with the second semiconductor material, wherein the second contact is aligned with the opening in the support structure such that radiation in the selected spectrum passes through the opening;
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact; and
a conductive material on the insulating material, the conductive material having a first terminal in contact with the first contact and a second terminal in contact with the second contact.
8. A solid state transducer (SST) die, comprising:
a support structure comprising a support material and a growth surface suitable for growing epitaxial semiconductor materials, wherein the support structure has an opening;
an SST structure configured to produce radiation in the selected spectrum, the SST structure having a first semiconductor material grown on the growth surface of the support structure, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material;
a first contact electrically coupled with the first semiconductor material, wherein the first contact is aligned with the support structure;
a second contact electrically coupled with the second semiconductor material, wherein the second contact is aligned with the opening in the support structure such that radiation in the selected spectrum passes through the opening;
a buffer material on a portion of the growth surface;
an insulating material on the first contact, the first semiconductor material, the active region, the second semiconductor material, and the second contact; and
a conductive material in direct contact with both the buffer material and the insulating material.