IP Library Granted Patent US 10,079,333
Granted Patent B2
US 10,079,333 · App. 15/490,859 · Granted Sep 18, 2018

Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods

Inventor: Sameer S. Vadhavkar (Boise, ID)
Assignee: Micron Technology, Inc.
H01L33/62H01L33/486H01L33/507H01L33/54H01L33/58H01L2933/005H01L2933/0041H01L2933/0058H01L2933/0066
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Quick Facts
Patent No.
US 10,079,333
App. No.
15/490,859
Granted
Sep 18, 2018
Kind
B2
Abstract

Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

Claims (12)

1. A method of making a light-emitting diode device, the method comprising flip-chip mounting a light-emitting diode onto a support member configured to convey an optical emission from the light-emitting diode, wherein flip-chip mounting the light-emitting diode onto the support member includes forming an optically transparent solder connection between the light-emitting diode and the support member.

2. The method of claim 1 , further comprising disposing an optically transparent underfill material between the light-emitting diode and the support member.

3. The method of claim 1 , further comprising forming the support member, wherein forming the support member includes spin coating a precursor material onto a substrate.

4. The method of claim 3 wherein the precursor material includes a curable matrix material and particles of converter material disposed within the matrix material.

5. The method of claim 1 , further comprising forming the support member, wherein forming the support member includes molding a precursor material.

6. The method of claim 5 wherein the precursor material includes a curable matrix material and particles of converter material disposed within the matrix material.

7. The method of claim 6 wherein forming the support member includes: settling the particles of converter material within the matrix material; and curing the matrix material after settling the particles of converter material.

8. The method of claim 1 , further comprising forming a lead on the support member, wherein forming the solder connection includes forming the solder connection between the lead and a contact of a light-emitting diode.

9. The method of claim 8 wherein: forming the lead includes forming a patterned lead having a pad and a trace extending from the pad; and forming the solder connection includes forming the solder connection between the pad and the contact.

10. The method of claim 8 , further comprising forming a solder mask on the lead.

11. The method of claim 1 wherein forming the solder connection includes forming the solder connection such that the support member and the light-emitting diode are spaced apart on opposites sides of the solder connection.

12. The method of claim 1 wherein: the solder connection is a first solder connection; and the method further comprises forming a second solder connection between a lead on the support member and a system mount such that the light-emitting diode is between the support member and the system mount.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050702/0451 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 4 TO PATENT SECURITY AGREEMENT Recorded May 4, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042405/0909 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 18, 2017
From: VADHAVKAR, SAMEER S.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 042048/0705 →
Continuity (3)
Continuation 14603102 · Jan 22, 2015
Division 13219530 · Aug 26, 2011
Related Publication 20170222111A1 · Aug 3, 2017