Cu pillar cylindrical preform for semiconductor connection
A material for Cu pillars is formed as cylindrical preforms in advance and connecting these cylindrical preforms to electrodes on a semiconductor chip to form Cu pillars. Due to this, it becomes possible to make the height/diameter ratio of the Cu pillars 2.0 or more. Since electroplating is not used, the time required for production of the Cu pillars is short and the productivity can be improved. Further, the height of the Cu pillars can be raised to 200 μm or more, so these are also preferable for moldunderfill. The components can be freely adjusted, so it is possible to easily design the alloy components to obtain highly reliable Cu pillars.
1. A Cu pillar for a semiconductor connection consisting of one or more of (b) and (c), and
further containing one or more of (a1), (a2), (a3), and (a4) among
(a1) having one or more of Pt, Au, and Ni in a total of 0.1 to 5.0 mass %,
(a2) having Pd and one or more of Pt, Au, and Ni in a total of 0.1 to 5.0 mass %,
(a3) having Pd in a total of 3.5 to 5.0 mass %,
(a4) having Pd in a total of 0.10 to 0.12 mass %,
(b) having Ti in 3 to 15 mass ppm, and
(c) having P in 5 to 70 mass ppm
and a balance of Cu and unavoidable impurities, having a cylindrical shape with a diameter of 50 to 100 μm, and having a height/diameter ratio of that cylinder of 2.0 or more,
wherein the Cu pillar forms the semiconductor connection in a flip chip device, and
wherein a total of a content of S and a content of Cl contained as impurities is 1 mass ppm or less.
2. A semiconductor chip having the Cu pillar according to claim 1 connected to an electrode on the semiconductor chip.
3. A Cu pillar for a semiconductor connection consisting of one or more of (b) and (c), and
further containing one or more of (a1), (a2), (a3), and (a4) among
(a1) having one or more of Pt, Au, and Ni in a total of 0.1 to 5.0 mass %,
(a2) having Pd and one or more of Pt, Au, and Ni in a total of 0.1 to 5.0 mass %,
(a3) having Pd in a total of 3.5 to 5.0 mass %,
(a4) having Pd in a total of 0.10 to 0.12 mass %,
(b) having Ti in 3 to 15 mass ppm, and
(c) having P in 5 to 70 mass ppm
and a balance of Cu and unavoidable impurities, having a cylindrical shape with a diameter of 100 to 400 μm,
wherein the Cu pillar forms the semiconductor connection in a flip chip device, and
wherein a total of a content of S and a content of Cl contained as impurities is 1 mass ppm or less.
4. The Cu pillar for semiconductor connection according to claim 3 , wherein the cylinder has a height of 200 to 800 μm.
5. A semiconductor chip having the Cu pillar according to claim 3 connected to an electrode on the semiconductor chip.
6. A Cu pillar for a semiconductor connection consisting of (b) and optionally containing (c),
(b) having Ti in 3 to 15 mass ppm, and
(c) having P in 100 to 150 mass ppm,
and a balance of Cu and unavoidable impurities, having a cylindrical shape with a diameter of 50 to 100 μm, and having a height/diameter ratio of that cylinder of 2.0 or more,
wherein a total of a content of S and a content of Cl contained as impurities is 1 mass ppm or less and the Cu pillar forms the semiconductor connection in a flip chip device.
7. A semiconductor chip having the Cu pillar according to claim 6 connected to an electrode on the semiconductor chip.
8. A Cu pillar for a semiconductor connection consisting of (b) and optionally containing (c),
(b) having Ti in 3 to 15 mass ppm, and
(c) having P in 100 to 150 mass ppm,
and a balance of Cu and unavoidable impurities, and having a cylindrical shape with a diameter of 100 to 400 μm,
wherein a total of a content of S and a content of Cl contained as impurities is 1 mass ppm or less and the Cu pillar forms the semiconductor connection in a flip chip device.
9. The Cu pillar for semiconductor connection according to claim 8 , wherein the cylinder has a height of 200 to 800 μm.
10. A semiconductor chip having the Cu pillar according to claim 8 connected to an electrode on the semiconductor chip.