IP Library › Granted Patent US 10,418,242
Granted Patent B2
US 10,418,242 · App. 15/512,614 · Granted Sep 17, 2019

Substrate treatment method using a block copolymer containing a hydrophilic and a hydrophobic polymers

Inventors: Makoto Muramatsu (Koshi, JP); Tadatoshi Tomita (Koshi, JP); Hisashi Genjima (Koshi, JP); Gen You (Koshi, JP); Takahiro Kitano (Koshi, JP)
Assignee: Tokyo Electron Limited
H01L21/0337C08J7/18D06M14/18G03D5/003G03F7/0002G03F7/40H01J37/3255H01J37/32082H01L21/027H01L21/02043H01L21/0335H01L21/31H01L21/6719H01L21/67167H01L21/67173H01L21/67178H01L29/511H01L29/66545H05H1/46
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Quick Facts
Patent No.
US 10,418,242
App. No.
15/512,614
Granted
Sep 17, 2019
Kind
B2
Abstract

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

Claims (10)

1. A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate treatment method comprising:

a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate;

a thin film formation step of forming a thin film of 2 nm to 3 nm thickness for suppressing deformation of the resist pattern to cover a surface of the resist pattern with the thin film, wherein the thin film is a silicon-containing film;

a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and

a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

2. The substrate treatment method according to claim 1 ,

wherein the silicon-containing film is formed by plasma processing, and

wherein the plasma processing is performed by applying high-frequency power to an electrode containing silicon.

3. The substrate treatment method according to claim 1 ,

wherein the silicon-containing film is SiO, SiO 2 , or SiOC.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2017
From: MURAMATSU, MAKOTO; TOMITA, TADATOSHI; GENJIMA, HISASHI; YOU, GEN; KITANO, TAKAHIRO
To: TOKYO ELECTRON LIMITED
Reel/Frame 041639/0288 →
Priority Claims (1)
JP 2014-194167 · Sep 24, 2014 · national
Continuity (1)
Related Publication 20170287749A1 · Oct 5, 2017
Cited By (1)
US 12,469,683